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    FDB86135 Search Results

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    FDB86135 Price and Stock

    onsemi FDB86135

    MOSFET N-CH 100V 75A D2PAK
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    DigiKey FDB86135 Digi-Reel 3,066 1
    • 1 $7.02
    • 10 $4.746
    • 100 $7.02
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    FDB86135 Cut Tape 3,066 1
    • 1 $7.02
    • 10 $4.746
    • 100 $7.02
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    FDB86135 Reel 2,400 800
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    • 1000 $3
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    Avnet Americas FDB86135 Reel 9 Weeks 800
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    • 1000 $3.0772
    • 10000 $2.82353
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    Mouser Electronics FDB86135 16,729
    • 1 $5.22
    • 10 $3.97
    • 100 $3.14
    • 1000 $3
    • 10000 $2.93
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    Verical FDB86135 1,600 800
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    • 1000 $3.4286
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    FDB86135 246 2
    • 1 -
    • 10 $3.416
    • 100 $3.078
    • 1000 $3.078
    • 10000 $3.078
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    Arrow Electronics FDB86135 Cut Strips 246 10 Weeks 1
    • 1 $3.995
    • 10 $3.416
    • 100 $3.078
    • 1000 $3.078
    • 10000 $3.078
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    Newark FDB86135 Reel 800
    • 1 $3.77
    • 10 $3.77
    • 100 $3.77
    • 1000 $3.77
    • 10000 $3.36
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    Richardson RFPD FDB86135 800
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    • 1000 $3
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    Avnet Asia FDB86135 9 Weeks 800
    • 1 -
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    • 1000 $3.15789
    • 10000 $2.96296
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    Avnet Silica FDB86135 10 Weeks 800
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    EBV Elektronik FDB86135 11 Weeks 800
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    Wuhan P&S FDB86135 453 1
    • 1 $8.37
    • 10 $8.37
    • 100 $5.34
    • 1000 $4.05
    • 10000 $4.05
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    FDB86135 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDB86135 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V D2PAK Original PDF

    FDB86135 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FDB86135

    Abstract: No abstract text available
    Text: FDB86135 tm N-Channel PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDB86135 FDB86135 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB86135 N-Channel Shielded Gate PowerTrench MOSFET 100V, 176A, 3.5mΩ Features General Description • Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		FDB86135 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDB86135 N-Channel PowerTrench MOSFET tm 100V, 176A, 3.5mΩ Features General Description • Max RDS on = 3.5mΩ at VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDB86135 PDF