FDB035N10A Search Results
FDB035N10A Price and Stock
onsemi FDB035N10AMOSFET N-CH 100V 120A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB035N10A | Digi-Reel | 1,549 | 1 |
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FDB035N10A | Reel | 800 | 12 Weeks | 800 |
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FDB035N10A | 28,496 |
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FDB035N10A | 800 | 800 |
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FDB035N10A | 800 | 12 Weeks | 800 |
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FDB035N10A | Cut Tape | 637 | 1 |
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FDB035N10A | Reel | 19,200 | 19 Weeks | 800 |
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FDB035N10A |
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FDB035N10A | 1 |
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FDB035N10A | 875 |
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FDB035N10A | 800 |
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FDB035N10A | 13 Weeks | 800 |
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FDB035N10A | Cut Tape | 510 | 0 Weeks, 1 Days | 1 |
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FDB035N10A | 14 Weeks | 800 |
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FDB035N10A | 1,600 |
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Fairchild Semiconductor Corporation FDB035N10ATransistors |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDB035N10A | 4,133 |
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FDB035N10A | 9,600 |
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FDB035N10A Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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FDB035N10A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 120A D2PAK | Original |
FDB035N10A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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solar charge circuit max 856
Abstract: FDB035N10A
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FDB035N10A FDB035N10A solar charge circuit max 856 | |
TO254P1524X482-3NContextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDB035N10A FDB035N10A TO254P1524X482-3N | |
Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.5mW Features Description • RDS on = 3.0mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDB035N10A FDB035N10A | |
Contextual Info: FDB035N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.5 mΩ Features Description • RDS on = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
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FDB035N10A | |
dual diode marking A3Contextual Info: FDB035N10A tm N-Channel PowerTrench MOSFET 100V, 214A, 3.5mΩ Features Description • RDS on = 3.0mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDB035N10A FDB035N10A dual diode marking A3 |