FD500 Search Results

gct thyristor

Abstract: thyristor cdi FD500 4500v FD500JV-90DA
Contextual Info: MITSUBISHI SOFT RECOVERY DIODE FD500JV-90DA HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX φ3.5 ± 0.2 2.2 ± 0.2DEPTH ¡VRRM Repetitive peak reverse voltage . 4500V

FD500JV-90DA

Abstract: 1570a
Contextual Info: 三菱半導体〈ソフトリカバリーダイオード〉 FD500JV-90DA 大電力高周波用 平形 外形図 FD500JV-90DA 単位：mm 0.4min φ3.5 ± 0.2 フカサ2.2 ± 0.2 0.4min 26 ± 0.5 形 名 φ47 φ75max φ3.5 ± 0.2 フカサ2.2 ± 0.2 ¡IF AV 平均順電流 . 500A

FD500R65KE3-K

Abstract: IRF 930 FD500R65 FD500R
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD500R65KE3-K hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe

Contextual Info: FD500D12 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600 @Temp (øC) (Test Condition)93# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k¥ V(FM) Max.(V) Forward Voltage1.85 @I(FM) (A) (Test Condition)1.9k @Temp. (øC) (Test Condition)25#

Contextual Info: FD500D10 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600 @Temp (øC) (Test Condition)93# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k¥ V(FM) Max.(V) Forward Voltage1.85 @I(FM) (A) (Test Condition)1.9k @Temp. (øC) (Test Condition)25#

application FULL WAVE RECTIFIER

Abstract: FD500
Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD500GH HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD500GH • IF AV Average forward current •■■.500A • V rrm Repetitive peak reverse voltage ■■• ■ 2500V, 2800V • Q rr Reverse recovery charge ■■. 300//C

fd500gv

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD500GV HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD500GV OUTLINE DRAWING • I f a v Average forward c u rre n t. 500A • V rrm Repetitive peak reverse voltage • Q rr D im e n s io n s in m m

gct thyristor

Abstract: FD5000AV-100DA RECTIFIER DIODE 5000A
Contextual Info: MITSUBISHI RECTIFIER DIODE ARY FD5000AV-100DA IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-POWER, GENERAL USE PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD5000AV-100DA 6.35 x 10.8

Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm * 2.2 ± 0.2DEPTH APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS

gct thyristor

Abstract: FD500JV-90DA 2000A power diode qrr 530G thyristor cdi 2000A power diode
Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A

FD500R65KE3-K

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD500R65KE3-K hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe

Contextual Info: FD500D16 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600 @Temp (øC) (Test Condition)93# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k¥ V(FM) Max.(V) Forward Voltage1.85 @I(FM) (A) (Test Condition)1.9k @Temp. (øC) (Test Condition)25#

Contextual Info: MITSUBISHI RECTIFIER DIODE ARY FD5000AV-100DA IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-POWER, GENERAL USE PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD5000AV-100DA 6.35 x 10.8

irf 930

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD500R65KE3-K 高绝缘等级模块 highinsulatedmodule 初步数据/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A 典型应用 • 斩波应用 • 中压变流器 • 大功率变流器

gct thyristor

Abstract: FD500JV-90DA thyristor cdi 2000A power diode 2000A power diode qrr
Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FD500R65KE3-K hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe • Traktionsumrichter

2000A power diode

Abstract: FD500JV-90DA
Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm * ' lF AV Average forward current. 500A ' V r r m Repetitive peak reverse vo lta g e . 4 5 0 0 V

NE552R479A

Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.

mch215f104zp

Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
Contextual Info: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz

A81DC

Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
Contextual Info: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF

Contextual Info: Mini Float Level Switch visit our website PRODUCT INTRODUCTION 4 INTRODUCTION 4 WORKING PRINCIPLE The reed switch relies on two basic scientific principles namely: buoyancy and magnetism. Buoyancy causes the float which contains a magnet to rise with the liquid and magnetism

Bluetooth Energy Meter ckt diagram

Abstract: 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11
Contextual Info: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7170 BY： Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC JUL. 2001 7170 N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification- 3

AR5212

Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)

DCS1800

Abstract: NE5520279A NE5520279A-T1
Contextual Info: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15