FCQ10A04
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A04 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCQ10A04
FCQ10A04
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A03L FCQ10A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10A03L
FCQ10A03L
O-220AB
1cyc15
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCQ10A03L
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FCQ10A06
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCQ10A06
FCQ10A06
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Untitled
Abstract: No abstract text available
Text: 10A Avg. 40 Volts SBD FCQ10A04 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage
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Tc116
FCQ10A04
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Q10A06
Abstract: No abstract text available
Text: SBD T y p e : FCQ10 FCQ10A Q10A06 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10
FCQ10A
Q10A06
O-220AB
FCQ10A06
Q10A06
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FCQ10A04
Abstract: No abstract text available
Text: SBD T y p e : FCQ10 FCQ10A Q10A04 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10
FCQ10A04
O-220AB
FCQ10A04
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A03L FCQ10A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10A03L
FCQ10A03L
O-220AB
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10 FCQ10A Q10A04 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10
FCQ10A
Q10A04
O-220AB
FCQ10A04
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A04 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCQ10A04
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A06 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCQ10A06
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FCQ10A03L
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A03L FCQ10A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10A03L
O-220AB
FCQ10A03L
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A04 •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCQ10A04
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FCQ10A06
Abstract: No abstract text available
Text: 10A Avg. 60 Volts SBD FCQ10A06 •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage
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FCQ10A06
Tc108
20mVRMS,
100kHz,
FCQ10A06
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCQ10A03L
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FCQ10A03L
Abstract: No abstract text available
Text: 10A Avg. 30 Volts SBD FCQ10A03L •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitve Peak Surge Reverse Voltage
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FCQ10A03L
duty1/50
Tc116
FCQ10A03L
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Untitled
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A03L •OUTLINE DRAWING 構造 ： ショトキバリアダイオード S B D Construction: Schottky Barrier Diode 用途 ：高周波整流用 Application : High Frequency Rectification Approx Net Weight:1.75g ■最大定格 / Maximum Ratings
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FCQ10A03L
duty1/50)
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FCQ10A04
Abstract: No abstract text available
Text: SBD T y p e : FCQ10 FCQ10A Q10A04 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10A04
FCQ10
O-220AB
FCQ10A04
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FCQ10A03L
Abstract: No abstract text available
Text: SBD T y p e : FCQ10A03L FCQ10A03L OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Extremely Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology
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FCQ10A03L
O-220AB
FCQ10A03L
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FCQ10A04
Abstract: Schottky diode high reverse voltage ST Low Forward Voltage Schottky Diode
Text: SCHOTTKY BARRIER DIODE FCQ10A04 i0A/40v 3.11. L22 FEA TU R ES o Sim ilar to T0-220AB Case o Fully Molded Isolation o D ual Diodes - Cathode Common o L o w F orw ard Voltage Drop o L ow Pow er Loss, High Efficiency OHigh Surge Capability o Wire-Bonded technology
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i0A/40v
FCQ10A04
O-220AB
FCQ10A-
bbl5123
FCQ10A04
Schottky diode high reverse voltage
ST Low Forward Voltage Schottky Diode
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCQ10A04 i0A /40v FEATURES o Sim ila r to T O -2 2 0 A B C ase o F u lly M olded Isolatio n o D u a l Diodes - Cathode Comm on o L o w F orw ard V o lta g e Drop o L o w P ow er L oss, H igh E fficien cy o H igh Su rg e C apability o W ire-Bond ed technology
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FCQ10A04
FCQ10A.
bbl5153
QGG2G24
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE ioa /sov FCQ10A03L 3.H.122 MAX FEATURES 10.31.4051 3 .4 I.1 3 4 U . . ^ / r ô ï â ) UIA o S im ila r to T 0-220A B C ase O F u lly M olded Iso la tio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C ath o d e C om m on
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FCQ10A03L
FCQ10A.
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 10A/30V FCQ10A03L FEA TU RES o Similar to TO-220AB Case o Fully Molded Isolation o Extremely Low Forward Voltage Drop oD ual Diodes—Cathode Common oL ow Power Loss, High Efficiency o High Surge Capability o Wire-bonded technology MAXIMUM RATINGS
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0A/30V
FCQ10A03L
O-220AB
FCQ10A03L
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE FCQ10A06 i o a /g o v 3.11.122 MAX FEATURES in .3 .4 0 S )_ H I.1 3 4 )„ . . m a x n / r s n T O U IA O Sim ilar to TO-220AB Case o Fully Molded Isolation o D ual Diodes - Cathode Common o L o w Forw ard V oltage Drop o Low Pow er Loss, High Efficiency
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FCQ10A06
O-220AB
FCQ10A.
bbl51BB
QQ02G55
bblS123
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