DL161
Abstract: DL162 DL163
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xD
16-Bit)
Am29DL164D
Am29DL162D
DL161
DL162
DL163
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Untitled
Abstract: No abstract text available
Text: Am29SL800D Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29SL800D
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DL162
Abstract: DL163
Text: ADVANCE INFORMATION Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory Back DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29DL16xC
16-Bit)
FBC048.
DL162
DL163
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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S29GL-M
S29GL256MS29GL128MS29GL064MS29GL032M
S29GL128MS29GL128N
S29GL256MS29GL256N
S29GLxxxN
00-B-5
S29GL032M
LAA064
asme SA388
gl128m
A2113
S29GL256
E78000
S29GL128N
TSOP56 S29GL128N
sa32sa35
S29GLxxxM
BGA-63
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164D48
Abstract: DL162 DL163 D163D
Text: Am29DL162D/163D/164D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations
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Am29DL162D/163D/164D
16-Bit)
Am29DL16xC
Am29DL16xD
164D48
DL162
DL163
D163D
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Untitled
Abstract: No abstract text available
Text: Am29LV320MT/B Data Sheet For new designs, S29GL032M supercedes Am29LV320MT/B and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced
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Am29LV320MT/B
S29GL032M
S29GLxxxM
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A800DB12U
Abstract: No abstract text available
Text: Am29SL800D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29SL800D
A800DB12U
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S29JL032
Abstract: DL161 DL162 DL163 S29JL032H S29PL032J S29PL-J D162DT90 D163DB70 D164DB70
Text: Am29DL16xD Data Sheet Retired Product Am29DL16xD Cover Sheet This product family has been retired and is not recommended for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factoryrecommended migration path. Please refer to the S29JL032H data sheet for specifications and ordering information.
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Am29DL16xD
S29JL032H
S29PL032J
S29PL-J
21533E6
S29JL032
DL161
DL162
DL163
D162DT90
D163DB70
D164DB70
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s29gl032m10tair
Abstract: No abstract text available
Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics
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S29GLxxxM
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
32Megabit,
128-word/256-byte
8-word/16-byte
BGA-80P-M02
s29gl032m10tair
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Untitled
Abstract: No abstract text available
Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations
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Am29DL16xD
16-Bit)
VBF048
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29LV320MT/B 32 Megabit 2 M x 16-Bit/4 M x 8-Bit MirrorBit 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations
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Am29LV320MT/B
16-Bit/4
128-word/256-byte
8-word/16-byte
Kword/64-Kbyte
LAA064--64-Ball
FBD048-->
FBC048)
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LV320MT
Abstract: 101R 120R LV033MU
Text: ADVANCE INFORMATION Am29LV033MU 32 Megabit 4 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations
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Am29LV033MU
256-byte
16-byte
40-Pin
LV320MT
101R
120R
LV033MU
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29gl064
Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128N,
S29GL256N
S29GL032M,
29gl064
TSR056
BGA-63
S29GL032A
S29GL032M
S29GL064A
S29GL064M
S29GL128M
TSOP-20
S29GL256M
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S29GL128P
Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128P,
S29GL256P
S29GL032M,
S29GL128P
a8800
S29GL032
S29GL032A
S29GL032M
S29GL064A
S29GL064M
S29GL128M
S29GL256M
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29gl064
Abstract: Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M
Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit 3.0 Volt-only Page Mode Flash Memory Featuring 0.23 µm MirrorBit Process Technology Data Sheet For new designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M,
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S29GL-M
S29GL256M,
S29GL128M,
S29GL064M,
S29GL032M
S29GL032A,
S29GL064A,
S29GL128N,
S29GL256N
S29GL032M,
29gl064
Operations-S29GL064M
29gl064M
8A000
TSOP-20 FOOTPRINT
S29GL032M
lead frame pin grid array
GL128M
jedec mo-142
GL256M
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Am29LV* 64 boot
Abstract: Flash Memory Product Selector Guide TSOP 44-40 Package FBC048 AM29DL323C AMD AM29F016B FGA04 pl 032 AM29F010 Product Selector Guide
Text: FLASH MEMORY PRODUCT SELECTOR GUIDE 3.0 Volt-only Simultaneous Read/Write 1.8 Volt-only Sector Erase 8 Mbit 16 Mbit 4 Mbit 8 Mbit 16 Mbit 32 Mbit Am29SL800C Am29SL160C Am29DL400B Am29DL800B Am29DL162C Am29DL163C Am29DL322C Am29DL323C 3.0 Volt-only Burst Mode
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Am29SL800C
Am29SL160C
Am29DL400B
Am29DL800B
Am29DL162C
Am29DL163C
Am29DL322C
Am29DL323C
Am29BL162C
Am30LV0064D
Am29LV* 64 boot
Flash Memory Product Selector Guide
TSOP 44-40 Package
FBC048
AMD AM29F016B
FGA04
pl 032
AM29F010
Product Selector Guide
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Untitled
Abstract: No abstract text available
Text: A M D il ADVANCE INFORM ATIO N M i i .i i n - i i i i n i i in.i i i « Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L AD VA N TA G ES
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Am29DL162C/Am29DL163C
16-Bit)
29DL162C/Am
29DL163C
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29LV160B 16 Megabit 2 M x 8-Bit/I M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV160B
16-Bit)
FBC048;
FBC048.
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A160CT12
Abstract: No abstract text available
Text: ADVANCE INFORM ATIO N AM D ii Am29SL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS A R C H ITEC TU R A L A D VANTAG ES S O FTW A R E FEATURES • Secured Silicon (SecSi) Sector: 256-byte sector
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Am29SL160C
16-Bit)
256-byte
29SL160C
A160CT12
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Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY AMD* Am29LV160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV160D
16-Bit)
Am29LV160B
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 Am29DL16xC 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • — Data can be continuously read from one bank w hile executing erase/program functions in other bank.
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Am29DL16xC
16-Bit)
20-year
FBC048.
40-pin
29DL16xC
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TIC 160D
Abstract: 29LV160D L160DB70
Text: ADVANCE INFORMATION AMDÜ Am29LV160D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV160D
16-Bit)
Am29LV160B
cAm29LV160B
TIC 160D
29LV160D
L160DB70
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMD Am29SL160C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program , and erase operations — ■ Ideal for battery-pow ered applications
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Am29SL160C
16-Bit)
29SL160C
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Untitled
Abstract: No abstract text available
Text: AMD£I Am29LV017B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications — Embedded Erase algorithm autom atically
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Am29LV017B
FBC048.
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