FAIRCHILD TRANSISTOR TO5 Search Results

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

SH2100

Abstract: fairchild micrologic 5 pin relay 12vdc free fairchild micrologic 923 fairchild micrologic 903 FD600 Fairchild SH rtl micrologic rtl micrologic 923 ScansUX983
Contextual Info: SH2100 HIGH CURRENT DRIVER HYBRID CIRCUITS GENERAL DESCRIPTION - The SH 2100 Hybrid consists of a Buffer Micrologic Integrated Circuit driving a high-current NPN Planar* Epitaxial Silicon Transistor. PHYSICAL DIMENSIONS SIMILAR TO TO-5J ♦Planar is a patented Fairchild process.

2N2907A FAIRCHILD SEMICONDUCTOR

Abstract: 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE 3 4 b cIL,7M 00S7S3L: 7 3 4 69 67 4 F A I R C H I L D S E M I C O N D U C T O R 84D 27536 2N2710/FTS02710 ^ 3ir^ NPN Small Signal High Speed Low Power Saturating Switch Transistor F A IR C H IL D A Schlumberger Company PACKAGE

half-adder by using D flip-flop

Abstract: L9915 fairchild micrologic ME 9926 rtl micrologic rs FLIPFLOP SCHEMATIC mod 8 using jk flipflop rtl micrologic 900 700S2 dual flip flop 8-pin
Contextual Info: JUNE 1966 • SL-218 RT|xL COMPOSITE DATA SHEET INDUSTRIAL MICROLOGIC INTEGRATED CIRCUITS OPERATI NG T E M P E R A T U R E RANGE: 0°C t o + 7 0 ° C M E T A L PACKAGE 15° C t o 5 5° C (EPOXY) s o > co X GENERAL DESCRIPTION — The Fairchild Ind ustrial Resistor-Transistor M icrologic® (RY/iL) integrated c irc u it fa m ily consists o f a num ber

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

2N5306

Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

k 3683 transistor

Abstract: BCxxx TRANSISTOR PN2222N 2N6076 CBVK741B019 F63TNR small signal transistor transistor k 3683 transistor k 0247
Contextual Info: DISCRETE POWER & SIGNAL TECHNOLOGIES 2N6076 SILICON PNP SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 25 V Min 1 2 3 hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA B C E 2 0.135 - 0.145 (3.429 - 3.683) 3 0.175 - 0.185 (4.450 - 4.700) ABSOLUTE MAXIMUM RATINGS (NOTE 1)

2N5308

Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247
Contextual Info: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N3663

Abstract: CBVK741B019 F63TNR PN2222N PN918
Contextual Info: 2N3663 2N3663 B TO-92 CE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*

PN5179

Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Contextual Info: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark: 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency

MPSA12

Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
Contextual Info: MPSA12 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

CBVK741B019

Abstract: F63TNR MPSA28 MPSA29 PN2222N BCxxx TRANSISTOR
Contextual Info: MPSA29 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5307

Abstract: CBVK741B019 F63TNR MPSA14 PN2222N
Contextual Info: 2N5307 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

transistor 2001 H1

Abstract: PN4275 CBVK741B019 F63TNR PN2222N PN2369A
Contextual Info: PN4275 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

PN2222N

Abstract: 2N6426 CBVK741B019 F63TNR MPSA14 transistor k 0247
Contextual Info: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5770

Contextual Info: 2N5770 C TO-92 BE NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol

2N5769

Contextual Info: 2N5769 C TO-92 BE NPN Switching Transistor This device is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: FPNH10 FPNH10 C TO-92 BE NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

NZT7053

Abstract: 2N7052 2N7053 CBVK741B019 F63TNR PN2222N
Contextual Info: 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings*

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Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

MPSH10 fairchild transistor

Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency