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    FAIRCHILD MAKE INFRARED EMITTING DIODE TO18 Search Results

    FAIRCHILD MAKE INFRARED EMITTING DIODE TO18 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD MAKE INFRARED EMITTING DIODE TO18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LED56F

    Abstract: Infrared phototransistor TO18
    Text: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X


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    PDF LED55BF LED55CF LED56F LED55BF/LED55CF/LED56F 940nm LED55CF LED55CFB LED56F Infrared phototransistor TO18

    LED55B

    Abstract: LED55C LED56
    Text: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected


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    PDF LED55B LED55C LED56 LED55B/LED55C/LED56 LED55CB LED55C LED55B LED56

    LED55B

    Abstract: LED55C LED56 Infrared phototransistor TO18
    Text: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected


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    PDF LED55B LED55C LED56 LED55B/LED55C/LED56 LED55C LED55CB LED55B LED56 Infrared phototransistor TO18

    Untitled

    Abstract: No abstract text available
    Text: F5D1/2/3 AlGaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS 0.209 5.31 • The F5D series is a 880 nm LED in a 0.184 (4.67) narrow angle, TO-46 package. 0.030 (0.76) NOM 0.255 (6.48) FEATURES • Good optical to mechanical alignment 1.00 (25.4)


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    Untitled

    Abstract: No abstract text available
    Text: F5D1/2/3 AlGaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS 0.209 5.31 • The F5D series is a 880 nm LED in a 0.184 (4.67) narrow angle, TO-46 package. 0.030 (0.76) NOM 0.255 (6.48) FEATURES • Good optical to mechanical alignment 1.00 (25.4)


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    LED55C

    Abstract: LED55B LED56 fairchild make INFRARED EMITTING DIODE TO18 INFRARED EMITTING DIODE TO18 LED55B/LED55C/LED56
    Text: GaAs INFRARED EMITTING DIODE LED55B LED55C LED56 PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.255 (6.48) 1.00 (25.4) MIN ANODE (CASE) 0.100 (2.54) 0.050 (1.27) SCHEMATIC 1 3 0.040 (1.02) Ø0.020 (0.51) 2X 0.040 (1.02) 45° ANODE (Connected


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    PDF LED55B LED55C LED56 LED55B/LED55C/LED56 DS300312 LED55C LED55B LED56 fairchild make INFRARED EMITTING DIODE TO18 INFRARED EMITTING DIODE TO18

    LED56F

    Abstract: fairchild make INFRARED EMITTING DIODE TO18 LED55BF LED55CF
    Text: GaAs INFRARED EMITTING DIODE LED55BF LED55CF LED56F PACKAGE DIMENSIONS 0.209 5.31 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) MIN ANODE (CASE) SCHEMATIC 0.100 (2.54) 0.050 (1.27) 1 0.040 (1.02) ANODE (Connected To Case) 3 3 Ø0.020 (0.51) 2X


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    PDF LED55BF LED55CF LED56F LED55BF/LED55CF/LED56F 940nm DS300313 LED56F fairchild make INFRARED EMITTING DIODE TO18 LED55BF LED55CF

    L14G1

    Abstract: l14g1 equivalent infrared led L14G2 circuit design L14G2 application note 1N6266 Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor
    Text: 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor 0.030 (0.76) NOM • Hermetically sealed package


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    PDF 1N6266 1N6266 DS300278 L14G1 l14g1 equivalent infrared led L14G2 circuit design L14G2 application note Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor

    1N6264

    Abstract: No abstract text available
    Text: 1N6264 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment • Mechanically and wavelength matched to the 0.209 5.31 TO-18 series phototransistor 0.184 (4.67) • Hermetically sealed package 0.030 (0.76) NOM


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    PDF 1N6264 1N6264 DS300276

    1N6265

    Abstract: No abstract text available
    Text: 1N6265 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor • Hermetically sealed package 0.030 (0.76) NOM


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    PDF 1N6265 1N6265 DS300277

    CQX15

    Abstract: CQX17
    Text: CQX15, CQX17 GaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS The CQX15 and CQX17 series are 0.209 5.31 940nm LEDs in a wide angle, TO-46 0.184 (4.67) package. 0.030 (0.76) NOM 0.155 (3.94) MAX FEATURES • Good optical to mechanical alignment


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    PDF CQX15, CQX17 CQX15 CQX17 940nm DS300285

    CQX14

    Abstract: CQX16
    Text: CQX14, CQX16 GaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS 0.209 5.31 The CQX14/16 are 940 nm LEDs in a 0.184 (4.67) narrow angle, TO-46 packages. 0.030 (0.76) NOM 0.255 (6.48) FEATURES • Good optical to mechanical alignment 1.00 (25.4) MIN


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    PDF CQX14, CQX16 CQX14/16 DS300284 CQX14 CQX16

    F5E1

    Abstract: fairchild make INFRARED EMITTING DIODE TO18
    Text: F5E1/2/3 AlGaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS The F5E series are 880nm LEDs in a 0.209 5.31 wide angle, TO-46 package. 0.184 (4.67) 0.030 (0.76) NOM 0.155 (3.94) MAX FEATURES • Good optical to mechanical alignment 1.00 (25.4) MIN


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    PDF 880nm DS300287 F5E1 fairchild make INFRARED EMITTING DIODE TO18

    L14G

    Abstract: fairchild make INFRARED EMITTING DIODE TO18
    Text: F5D1/2/3 AlGaAs INFRARED EMITTING DIODE DESCRIPTION PACKAGE DIMENSIONS 0.209 5.31 • The F5D series is a 880 nm LED in a 0.184 (4.67) narrow angle, TO-46 package. 0.030 (0.76) NOM 0.255 (6.48) FEATURES • Good optical to mechanical alignment 1.00 (25.4)


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    PDF DS300286 L14G fairchild make INFRARED EMITTING DIODE TO18

    phototransistor four-lead

    Abstract: Infrared phototransistor TO18 Phototransistor optocoupler C9040 MCT4
    Text: PHOTOTRANSISTOR OPTOCOUPLER MCT4 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) 0.210 (5.34) 0.170 (4.32) 0.560 (14.22) 0.500 (12.70) SCHEMATIC 0.100 (2.54) DIA. 3 0.048 (1.22) 0.028 (0.71) 4 2 1 ANODE 1 2 COLLECTOR 0.019 (0.48) Ø


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    PDF DS300241 phototransistor four-lead Infrared phototransistor TO18 Phototransistor optocoupler C9040 MCT4

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    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLER MCT4 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) 0.210 (5.34) 0.170 (4.32) 0.560 (14.22) 0.500 (12.70) SCHEMATIC 0.100 (2.54) DIA. 3 0.048 (1.22) 0.028 (0.71) 0.046 (1.16) 0.036 (0.92) 4 2 1 ANODE 1 2 COLLECTOR


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    PDF DS300241

    WG12864A

    Abstract: 7028 SMD Transistor wh1604 WH1602B 94V0 200108 TRANSISTOR SMD MARKING CODE NM cree 3535 WH1602L WG24064A Kingbright 55-0197
    Text: Optoelectronics New products SMD LEDs White 3528 Series High Power SMD LEDs White 3535 37E Series From £0.05 See page 604 Page 599 From £0.64 12V LED Strips, 4.8W per metre 12V LED Strips, 4.8W per metre Warm white See page 610 Cool white See page 610 From


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    PDF L-934 1511A35W3 1511A35W3D 1511A35UY3 1511A35UG3 1000mcd 500mcd 200mcd 1500mcd 5mA/10mA WG12864A 7028 SMD Transistor wh1604 WH1602B 94V0 200108 TRANSISTOR SMD MARKING CODE NM cree 3535 WH1602L WG24064A Kingbright 55-0197

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


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    PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    stk 453 030 A power amplifier ic

    Abstract: ic audio power amp stk 2028 transistor b740 HCPL 1458 8 pin opto ptc 14749 Atlas PWM 3021 LTS 543 pin common cathode display ic stk 432 050 CXA-0271 cross reference marking code x328 SMD ic
    Text: OptoElectronics Displays 3M Touch Systems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49 Conflux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Digital View . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51


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    PDF RS232 782-TOIM4232 stk 453 030 A power amplifier ic ic audio power amp stk 2028 transistor b740 HCPL 1458 8 pin opto ptc 14749 Atlas PWM 3021 LTS 543 pin common cathode display ic stk 432 050 CXA-0271 cross reference marking code x328 SMD ic

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


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    TRANSISTOR ED203

    Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
    Text: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the


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    PDF 1N2175 TRANSISTOR ED203 FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa

    TIL702

    Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
    Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or


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    PDF LCC4230-D EPN4050 TIL702 TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    HP5082-7760

    Abstract: hp 4514 opto led 7 segment anode TIL 702 HP 2231 opto coupler uaa170 UAA180 equivalent seven segment to BCD converter LM 7447 IC hp 5082 4204 pin photodiode cd40288 7448 bcd to seven segment decoder
    Text: ABOUT THE AUTHORS STAN GAGE has more than 10 years' experi­ ence in the design and application of optoelec­ tronic devices and the design and processing of linear integrated circuits. DAVE EVANS has developed various contrast enhancement technologies currently being


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