Untitled
Abstract: No abstract text available
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®
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Untitled
Abstract: No abstract text available
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package
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L41B
Abstract: 10-L41B-11 FDMS2504SDC
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®
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Untitled
Abstract: No abstract text available
Text: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and
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350mW
DO-35
MIL-STD-202,
DO-35
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DB3TG
Abstract: No abstract text available
Text: DB3-DB3TG 150mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and
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150mW
DO-35
MIL-STD-202,
DO-35
DB3TG
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Untitled
Abstract: No abstract text available
Text: DB3-DB3TG 150mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and
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150mW
DO-35
MIL-STD-202,
DO-35
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RHRU50100
Abstract: RHRU5070 RHRU5080 RHRU5090
Text: RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet January 2002 50A, 700V - 1000V Hyperfast Diodes Features RHRU5070, RHRU5080, RHRU5090 and RHRU50100 TA49066 are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of
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RHRU5070,
RHRU5080,
RHRU5090,
RHRU50100
RHRU5090
TA49066)
RHRU50100
RHRU5070
RHRU5080
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55C 3V0 ZENER DIODE
Abstract: marking 5c diode zener diode 5C 3v3 5C diode bzx55c5v6 55C 6v8 ZENER DIODE Marking 5c 55C 3V9 ZENER DIODE 5C MARKING BZX55-C24
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
BZX55C56
DO-35
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
55C 3V0 ZENER DIODE
marking 5c diode
zener diode 5C 3v3
5C diode
bzx55c5v6
55C 6v8 ZENER DIODE
Marking 5c
55C 3V9 ZENER DIODE
5C MARKING
BZX55-C24
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BZX55C10
Abstract: No abstract text available
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
DO-35
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
\TEMP\BZX55C56
16-Aug-2007
BZX55C10
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Untitled
Abstract: No abstract text available
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
DO-35
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
\TEMP\BZX55C36
16-Aug-2007
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55C 3V0 ZENER DIODE
Abstract: BZX55C2V7 fairchild
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
DO-35
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
\TEMP\BZX55C2V7
16-Aug-2007
55C 3V0 ZENER DIODE
BZX55C2V7 fairchild
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RHRU50100
Abstract: RHRU5070 RHRU5080 RHRU5090 40TB10
Text: RHRU5070, RHRU5080, RHRU5090, RHRU50100 Data Sheet 50A, 700V - 1000V Hyperfast Diodes Title RHRU5070, RHRU5080, RHRU5090 and RHRU50100 are hyperfast diodes with soft recovery characterHRU TA49066 istics (tRR < 75ns). They have half the recovery time of 70,
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RHRU5070,
RHRU5080,
RHRU5090,
RHRU50100
RHRU5090
TA49066)
are75ns)
RHRU50100
RHRU5070
RHRU5080
40TB10
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BZX55C10
Abstract: 55C 3V9 ZENER DIODE BZX55C12 55C 2v4 BZX55C18 BZX55C3V9 BZX55C6V2
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
BZX55C56
DO-35
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C10
55C 3V9 ZENER DIODE
BZX55C12
55C 2v4
BZX55C18
BZX55C3V9
BZX55C6V2
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Untitled
Abstract: No abstract text available
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
DO-35
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
\TEMP\BZX55C51
16-Aug-2007
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zener diode 5C 3v3
Abstract: BZX55C10 BZX55C2V4
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
DO-35
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
\TEMP\BZX55C39
16-Aug-2007
zener diode 5C 3v3
BZX55C10
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Untitled
Abstract: No abstract text available
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
DO-35
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
\TEMP\BZX55C2V4
16-Aug-2007
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8560S
FDMS8560S
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BZX55C10
Abstract: No abstract text available
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter PD Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range
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BZX55C2V4
BZX55C56
DO-35
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C56
BZX55C10
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*F30U60DN
Abstract: ffpf30u60dn
Text: FFPF30U60DN FFPF30U60DN Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits
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FFPF30U60DN
O-220F
FFPF30U60DNTU
O-220F
*F30U60DN
ffpf30u60dn
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FFPF10F150STU
Abstract: No abstract text available
Text: FFPF10F150S FFPF10F150S Features • High voltage and high reliability • High speed switching • Low forward voltage TO-220F Applications 1 • Suitable for damper diode in horizontal deflection circuits 2 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings
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FFPF10F150S
O-220F
FFPF10F150STU
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5C diode
Abstract: marking 5c diode DIODE 5C marking 5C diode marking 5c BZX55C56 BZX55C4V3 BZX55c5v1 Series BZX55C2V4 BZX55C2V7
Text: BZX55C2V4 - BZX55C56 Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD Ta = 25°C unless otherwise noted Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” Derate above 75°C TJ, TSTG
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BZX55C2V4
BZX55C56
DO-35
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C56
5C diode
marking 5c diode
DIODE 5C
marking 5C
diode marking 5c
BZX55C4V3
BZX55c5v1 Series
BZX55C2V7
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30US30DN
Abstract: FFH30US30DN
Text: FFH30US30DN 30A, 300V Stealth Diode General Description The FFH30US30DN is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current IRM(REC , low VF and soft recovery under typical operating conditions.
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FFH30US30DN
FFH30US30DN
175oC
30US30DN
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Untitled
Abstract: No abstract text available
Text: Connection Diagrams 1401 3 3 29 1 1404 3 2 1 3 2 3 1403 2NC 1 2 3 1405 2 1 2 1 MARKING MMBD1401 29 MMBD1403 32 MMBD1404 33 MMBD1405 34 SOT-23 1 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM
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MMBD1401
MMBD1403
MMBD1404
MMBD1405
OT-23
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7121
Abstract: MMBD1400 MMBD1401 MMBD1403 MMBD1404 MMBD1405
Text: Connection Diagrams 1401 3 3 29 1 1404 3 2 1 3 2 3 1403 2NC 1 2 3 1405 2 1 2 1 MARKING MMBD1401 29 MMBD1403 32 MMBD1404 33 MMBD1405 34 SOT-23 1 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM
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MMBD1401
MMBD1403
MMBD1404
MMBD1405
OT-23
7121
MMBD1400
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