FAIRCHILD DUAL NPN SILICON TRANSISTOR Search Results

pt 4115 led driver

Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

KSC1815YTA

Abstract: ksc1815
Contextual Info: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package

Contextual Info: FJB5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application D2-PAK 1 1.Base 2.Collector Absolute Maximum Ratings* 3.Emitter Ta = 25°C unless otherwise noted

C5026M-O

Abstract: equivalent transistor for c5026m QS 100 NPN Transistor KSC5026M KSC5026MOS
Contextual Info: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage 1100

ksh200 equivalent

Abstract: ksh200 IPAK
Contextual Info: KSH200 NPN Epitaxial Silicon Transistor Features • • • • D-PAK for Surface Mount Applications High DC Current Gain Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base Absolute Maximum Ratings

Contextual Info: KSH200 NPN Epitaxial Silicon Transistor Features • • • • D-PAK for Surface Mount Applications High DC Current Gain Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base Absolute Maximum Ratings

Contextual Info: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C

Contextual Info: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units Collector-Base Voltage 1100 V

j13007-1 fairchild

Contextual Info: MJD31C NPN Epitaxial Silicon Transistor Features Description • • • • • Designed for general-purpose power and switching, such as output or driver stages in applications. General-Purpose Amplifier Low-Speed Switching Applications Lead Formed for Surface Mount Application No Suffix

Contextual Info: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C

FJB5555

Contextual Info: FJB5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application D2-PAK 1 1.Base 2.Collector Absolute Maximum Ratings* 3.Emitter Ta = 25°C unless otherwise noted

Contextual Info: KSH122 / KSH122I NPN Silicon Darlington Transistor Description Features • • • • • • • Designed for general-purpose power and switching, such D-PAK for Surface Mount Applications as output or driver stages in applications. High DC Current Gain

Contextual Info: KSH44H11 / KSH44H11I NPN Epitaxial Silicon Transistor Features Description • • • • • Designed for general-purpose power and switching, such as output or driver stages in applications. Lead Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix)

Contextual Info: MJD47/50 NPN Epitaxial Silicon Transistor Features • • • • High Voltage and High Reliability D-PAK for Surface Mount Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP47 and TIP50

Contextual Info: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol

transistor s1p

Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
Contextual Info: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol

tip31c fairchild

Abstract: MJD31 MJD31C TIP31 TIP31C IPAK transistor 31C
Contextual Info: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C

Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

150a gto

Abstract: QS 100 NPN Transistor 200H KSC5603D
Contextual Info: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application

J5555

Abstract: FJD5555 FJD5555TM US Global Sat
Contextual Info: FJD5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*

Contextual Info: BU406 NPN Epitaxial Silicon Transistor Features Description • High-Voltage Capability The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in

Contextual Info: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • • High Voltage Transistor Collector-Emitter Voltage: VCEO = 350V Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

KSP44

Abstract: Ksp44 data transistor KSP44 Fairchild Semiconductor
Contextual Info: KSP44/45 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor • Collector-Emitter Voltage: VCEO = KSP44: 400V KSP45: 350V • Collector Power Dissipation: PC max = 625mW 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number

Contextual Info: FJD5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*