FAFA53 Search Results

pir 500b

Contextual Info: N AtlER PHILIPS/DISCRETE E5E D • fafa53*131 Q020b6Q 5 PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.

8038 ic

Abstract: ic 8038 APPLICATIONS ic 8038 of ic 8038 lc 8038 BCF29 BCF30 8038 ic applications D024500
Contextual Info: •I fafa53T31 OOEHMT? ?□ H A P X N AMER PHILIPS/DISCRETE BCF29 BCF30 b7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level, low noise general purpose applications in thick and thin-film circuits.

BUK455

Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: 2TE D NAPC/ SIGNETICS Signetics • bb S3 T24 005405=1 T ■ T-V9-V7-/V SCN68000 16-/32-Bit Microprocessor Product Specification Microprocessor Products DESCRIPTION The SCN68000 is the first implementa­ tion of the S68000 1 6 /3 2 bit micropro­ cessor architecture. The SCN68000 has

Contextual Info: BD934F; BD936F BD938F; BO940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S0T186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.

mute detector

Abstract: trick BT 140 TDA9715H VID 200-12 S4 FB G044 3T24 AG34 VS38 din 45324
Contextual Info: NAPC/PHILIPS SEMICOND b3E D m b b S B ^ M ÜÜ77L7M G23 M S I C 3 Philips Semiconductors Preliminary specification Y/C one-chip processor VHS standard TDA9715H/A FEATURES • Luminance noise reduction (YNR) • Chrominance noise reduction (CNR) • Saturation dependent writing

CNX48

Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Contextual Info: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features

K963

Abstract: ECG1296
Contextual Info: ITE PHILIPS E C G INC 0 • htSaiSB 0005175 S ■ ECG1296 S e m ic o n d u c to r s T V Chrom a P rocesso r/D em odu lato r Features • N o A G C or killer adjustm ent necessary • Transform erless V C O Ab so lu te M a x im u m R atin gs TA =25°C Sy m b o l

BF410

Abstract: BF410A BF410B BF410C BF410D
Contextual Info: BF410A to D _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical IM-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended fo r applications up to the VHF range. These FETscan be supplied in fo u r IDSS groups. Special features are the low feedback capacitance and

74LVT244PW

Abstract: 74LVT244DB 74lvt244 Philips 74LVT244 74LVT244D LVT244 74lvt244D Philips 74lvt244Philips
Contextual Info: NAPC/PHILIPS SEMICOND b3E • T> bbS3T24 0064122 Philip« Sem iconductors Low Voltage Product* 347 3.3V A B T Octal buffer/line driver 3-State FEATURES • • • • • Octal bus interface 3-State buffers Output capacity: +64mA/-32mA TTL input and output switching levels

Contextual Info: Product specification Ph ilip * S em iconductors BLU86 UHF power transistor F EA T U R ES • SM D encapsulation Q U ICK R E F E R E N C E DATA R F performance at Ts S 60 “C in a common emitter dass-B test circuit see note 1 . • Emitter-ballasting resistors for

BUK455-600B

Abstract: BUK455-600A BUK455 T0220AB
Contextual Info: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,