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Catalog Datasheet	MFG & Type	PDF	Document Tags
two-plane program nand Abstract: No abstract text available Text: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes	Original	PDF	F59L4G81A 250us 4bit/512Byte two-plane program nand
NAND Flash Abstract: F59L4G81A Text: ESMT F59L4G81A Flash 4 Gbit 512M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes	Original	PDF	F59L4G81A 350us NAND Flash F59L4G81A
Untitled Abstract: No abstract text available Text: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	PDF	F59L4G81A 250us
F59L4G81A Abstract: F59L two-plane program nand "4bit correction" Text: ESMT Preliminary F59L4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	PDF	F59L4G81A 4bit/512Byte F59L4G81A F59L two-plane program nand "4bit correction"