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    F421 TRANSISTOR Search Results

    F421 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LP395Z/LFT1
    Texas Instruments Ultra Reliable Power Transistor 3-TO-92 Visit Texas Instruments Buy
    LM395T/NOPB
    Texas Instruments Ultra Reliable Power Transistor 3-TO-220 0 to 125 Visit Texas Instruments Buy
    ULN2003ANS
    Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-SO Visit Texas Instruments Buy
    ULQ2003ADRG4
    Texas Instruments Darlington Transistor Arrays 16-SOIC Visit Texas Instruments
    LP395Z/NOPB
    Texas Instruments Ultra Reliable Power Transistor 3-TO-92 -40 to 125 Visit Texas Instruments Buy

    F421 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F422

    Abstract: F423 F421 F-423 ir f422 UFNF422
    Contextual Info: UNITRODE CORP 9347963 TS UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10875 UFNF420 UFNF421 UFNF422 UFNF423 POWER MOSFET TRANSISTORS 500 Volt, 3.0 Ohm FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


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    D01Gfl75 UFNF420 UFNF421 UFNF422 UFNF423 UFNF423 F422 F423 F421 F-423 ir f422 PDF

    transistor f421

    Abstract: F421 Transistor f421
    Contextual Info: BF421 BF423 SILICON EPITAXIAL TRANSISTORS P-N-P transistors in plastic T O -9 2 package p rim a rily intended fo r class-B video o u tp u t stages in co lou r television and professional m o n ito r eq uip m ent. N-P-N com plem ents are B F 4 2 0 and B F 4 2 2 .


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    BF421 BF423 BF423 transistor f421 F421 Transistor f421 PDF

    SGSF32

    Abstract: transistor f421 F421 Transistor
    Contextual Info: 7 T 2 T B 3 7 o o a ' î i s a i m SGSF321/IF321 SGSF421/IF421 SGS-THOMSON [i$ 0 g ^ ( 5 i[ L [ i( g T O ( M ( g S S G S-THOMSON 3GE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H SW IT C H IN G SPEED NPN PO W ER ­ TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY


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    SGSF321/IF321 SGSF421/IF421 70kHz 500ms SGSF32 transistor f421 F421 Transistor PDF

    tr f422

    Abstract: F422 F423 UFNF422 ufnf420 F421
    Contextual Info: POWER MOSFET TRANSISTORS [J ™? 500 Volt, 3.0 Ohm UFNF422 UFNF423 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rdsioih and a high transconductance. FEATURES • Fast Switching


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    UFNF422 UFNF423 UFNF420 UFNF421 tr f422 F422 F423 F421 PDF

    transistor f421

    Abstract: SGSF421
    Contextual Info: SGSF321IF321 SGSF421/IF421 SGS-T110MS0N FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIGH S W ITC H IN G SPEED NPN POWERTRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­ TIONS ■ 70kHz SWITCHING SPEED • LOW COST DRIVE CIRCUITS


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    SGSF321IF321 SGSF421/IF421 SGS-T110MS0N 70kHz O-220 ATT220 140Wto 500ms transistor f421 SGSF421 PDF

    F421

    Abstract: IRF423
    Contextual Info: iH A R R is IRF420, IRF421, IFJF422 IF^F423 s e m i c o n d u c t o r 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2 A and 2.5A, 450V and 500V • Majority Carrier Device These are N-Channel enhancement mode silicon gate


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    IRF420, IRF421, TA17405. IFJF422 RF422, RF423 F421 IRF423 PDF

    F422

    Abstract: transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744
    Contextual Info: N E C ELECTRONICS INC 72 NEC N E C Electronics Inc. DE I b427525 000Ö275 □ | T-4 2-1 1 -0 9 //PD65000 CMOS-2 S E R IE S 3-MICRON CMOS GATE A R R A YS c April 1985 Description Figure 1. C M O S Gate Array Chip Layout Figure 2. Cell Configured as a Two-Input


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    b427525 uPD65000 The//PD65000 T-42-11-09 //PD65000 //PD65003 juPD65002 fiPD65010 juPD65020 F422 transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744 PDF

    b556

    Abstract: PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424
    Contextual Info: N E C 6427S2S N E C ELECTRONICS INC TÖ Ô Ê | L.M275ES QQlTTñM fl J ~ D V - ^ /Z - ìS ' Bi-CMOS-4 ADVANCED PROCESS b ì-c m o s g a t e a r r a y s ELECTRONICS INC 98D 17984 NEC Electronics Inc. February 1988 Description Features The Bi-CM O S-4 gate arrays feature the high speed of


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    6427S2S M275ES bM27525 I7993 T-45W/-/5 b556 PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424 PDF

    pin diagram of full adder using Multiplexer IC

    Abstract: tr f422 UPD65000 fj01 F713 f422 F715 PD65080 F-661 F-642
    Contextual Info: N E C ELECTRONICS INC 7 5 D E ] b4E75B5 ODDfiBlfi 3 SEC NEC Electronics Inc. T-42-11 09 % ¿tPD65000 CMOS-3 SERIES cm os g a te a r r a y s 2 -m ic ro n January 1985 Description The//PD65000 (CMOS-3) series of gate arrays are lowpower, high-speed devices featuring 2-micron silicon


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    b4E75B5 T-42-11 uPD65000 NECEL-000246-0185 pin diagram of full adder using Multiplexer IC tr f422 fj01 F713 f422 F715 PD65080 F-661 F-642 PDF

    f422

    Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003
    Contextual Info: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/iPD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip


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    uPD65000 //PD65003 juPD65002 fiPD65010 juPD65020 16-Pin 18-Pin 20-Pin 24-Pin 28-Pin f422 transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003 PDF

    transistor f422 equivalent

    Abstract: transistor f422 thomson CRT COLOUR TV SCHEMATIC DIAGRAM z80 ef9345 EF9345 TDA 9345 EF9367 TGS 813 difference between intel 8085 and motorola 6800 EF9345P
    Contextual Info: GRAPHIC PROCESSORS DATABOOK 1st EDITION MARCH 1989 TABLE OF CONTENTS INTRODUCTION Page 4 GENERAL INDEX 5 PRODUCT GUIDE 7 ALPHANUMERICAL and SEMI-GRAPHIC CRT CONTROLLERS 11 GRAPHICS CONTROLLERS 105 COLOR PALETTE 213 APPLICATION NOTES 247 3 INTRODUCTION The SGS-THOMSON Graphics data book contains comprehensive data on three


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    upd6500

    Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
    Contextual Info: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5


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    thomson CRT COLOUR TV SCHEMATIC DIAGRAM

    Abstract: z80 ef9345 SS 1091 asn EF9367 transistor f422 equivalent marking codes transistors SSs processor 8035 practical circuits TDA 9345 EF9345FN EF7910
    Contextual Info: GRAPHIC PROCESSORS DATABOOK 1st EDITION GRAPHIC PROCESSORS DATABOOK 1st EDITION MARCH 1989 TABLE OF CONTENTS INTRODUCTION Page 4 GENERAL INDEX 5 PRODUCT GUIDE 7 ALPHANUMERICAL and SEMI-GRAPHIC CRT CONTROLLERS 11 GRAPHICS CONTROLLERS 105 COLOR PALETTE 213 APPLICATION NOTES


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    F483

    Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
    Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the


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    16k-bit 64k-bit IP-8001 F483 f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637 PDF

    ru4f

    Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
    Contextual Info: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


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    IEU-7922, IP-8090 ru4f F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425 PDF

    65630

    Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
    Contextual Info: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


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    IEU-7922, IP-8090 65630 RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442 PDF

    D65806

    Abstract: 9215K1
    Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


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    65-MICRON xPD65800 D65806 9215K1 PDF

    J18M

    Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
    Contextual Info: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­


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    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


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    jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys PDF

    D65806

    Contextual Info: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s


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    65-micron D65806 PDF

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


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    50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d PDF

    bv0T

    Abstract: 658X
    Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


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    b4E75S5 QQ3T701 nPD658xx bv0T 658X PDF

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


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    50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe PDF

    transistor f422

    Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
    Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­


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    iPD658xx transistor f422 transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK PDF