F3B DIODE Search Results
F3B DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MC910
Abstract: lm339 pwm diagram quanta AOD4411 mosfet ao4418 Socket AM2 af1 cn21 100v 10p quanta computer intel p35 conexant cx20493 reference design
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133MHZ 915GM/GML RTL8100S 10K/F 10mil 10K-0603 10K-0603 36K/F 1U-0805 MC910 lm339 pwm diagram quanta AOD4411 mosfet ao4418 Socket AM2 af1 cn21 100v 10p quanta computer intel p35 conexant cx20493 reference design | |
SONY KNC 201 15
Abstract: knc 201 39 KNC 201 KNC 201 08 xo 405 mf tc144e KNC 201 35 conexant cx20493 reference design KNC 201 6 ga g31
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133MHZ 915GM/GML RTL8100S 10mil 20mil CH2507S ZD12V 1U-0805 X8877 SONY KNC 201 15 knc 201 39 KNC 201 KNC 201 08 xo 405 mf tc144e KNC 201 35 conexant cx20493 reference design KNC 201 6 ga g31 | |
Zener Diode 7v
Abstract: temperature compensated zener diode 1N91B
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lN91i5B Zener Diode 7v temperature compensated zener diode 1N91B | |
Contextual Info: KAI-04070 IMAGE SENSOR 2048 H X 2048 (V) INTERLINE CCD IMAGE SENSOR JUNE 12, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 2.1 PS-0145 KAI-04070 Image Sensor TABLE OF CONTENTS Summary Specification . 7 |
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KAI-04070 PS-0145 PS-0145 | |
Contextual Info: KAI-02170 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR AUGUST 14, 2013 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0146 KAI-02170 Image Sensor TABLE OF CONTENTS Summary Specification . 7 |
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KAI-02170 PS-0146 PS-0146 | |
Contextual Info: KAI-02170 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JUNE 14, 2013 PRELIMINARY DEVICE PERFORMANCE SPECIFICATION REVISION 0.7 PS-0146 This document contains preliminary specifications and design goals for a prototype product and is subject to change |
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KAI-02170 PS-0146 PS-0146 | |
Contextual Info: 1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR_ _ e oì e3i t.i geErâBs@Bî€3ageê@p m m - 61C 00271 ' T H I - J f de I l'un it 3 0000271 t f e@fiü£SP«8l Ceserai g@&îiië@Eî^iseÊ©r corg . f f lp Central Semiconductor Corp. 145 Adams Avenue |
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CBR30 0000S23 O-105 O-106 | |
Contextual Info: 1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR_ _ e oì e3i geErâBs@Bî€3ageê@p e@fiü£SP«8l mm- t.i Ceserai g@&îiië@Eî^iseÊ©r corg . de I l'un it 3 0000271 t f f l p Central Semiconductor Corp. 61C 00271 ' T H I - J f w f 1W9U1B 1N9^2B 1W9^3B |
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CBR10Series, CBR25Ser/es CBR12 CBR30 0000SE3 O-105 O-106 | |
F3D DIODE
Abstract: CD214C-F350 F3400 F3B DIODE F3400 rs GENERAL SEMICONDUCTOR DIODE SMC 400
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CD214C-F350 F3600 DO-214AB F350-F3200 F3600 F3D DIODE F3400 F3B DIODE F3400 rs GENERAL SEMICONDUCTOR DIODE SMC 400 | |
F3150
Abstract: 214B CD214B-F350 F3400 diode marking 33a on semiconductor DO-214AA diode F3B DIODE F3400 rs
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CD214B-F350 F3600 DO-214AA F3600 F350-F3200 F3300~ F3400 F3150 214B F3400 diode marking 33a on semiconductor DO-214AA diode F3B DIODE F3400 rs | |
CD214B-F350
Abstract: F3300 214B F3400
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CD214B-F350 F3600 DO-214AA IPA0522 F3300 214B F3400 | |
marking diode DO-214AB
Abstract: CD214C-F350 F3400 F3400 rs GENERAL SEMICONDUCTOR DIODE SMC 400 F3D DIODE
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CD214C-F350 F3600 DO-214AB F350-F3200 F3600 marking diode DO-214AB F3400 F3400 rs GENERAL SEMICONDUCTOR DIODE SMC 400 F3D DIODE | |
CD214C-F350
Abstract: F3400 SMC DO-214AB F3400 rs F3D DIODE
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CD214C-F350 F3600 DO-214AB repetitiveF3600 IPA0508 F3400 SMC DO-214AB F3400 rs F3D DIODE | |
Contextual Info: T PL IA N M CO *R oH S Features • RoHS compliant* ■ Glass passivated chip ■ Low reverse leakage current ■ Low forward voltage drop ■ High current capability CD214C-F350~F3600 Fast Response Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop |
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CD214C-F350 F3600 DO-214AB RS-481-A | |
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KAI-29050
Abstract: CXA 1238 S KAI-16070 xldr Color Filter Array CFA linear technology catalog 29050 cba
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KAI-16070 PS-0010 PS-0010 MTD/PS-1248 KAI-29050 CXA 1238 S xldr Color Filter Array CFA linear technology catalog 29050 cba | |
ic 74153 Multiplexer
Abstract: application of ic 74153 ic 74153 Multiplexer pin diagram pin DIAGRAM OF IC 74153 IC 74153 Multiplexer 74153 74153 multiplexer ic IC 74LS153 pin diagram ic pin configuration 74153 74153 equivalent
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LS153, 74LS153 74S153 1N916, 1N3064, 500ns 500ns ic 74153 Multiplexer application of ic 74153 ic 74153 Multiplexer pin diagram pin DIAGRAM OF IC 74153 IC 74153 Multiplexer 74153 74153 multiplexer ic IC 74LS153 pin diagram ic pin configuration 74153 74153 equivalent | |
Contextual Info: 74LS353 Signetics Multiplexer Dual 4-Input Multiplexer 3-State Product Specification Logic Products FEATURES • Inverting version of 'LS253 • 3-State outputs for bus interface and multiplex expansion • Common Select inputs • Separate Output Enable inputs |
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74LS353 LS253 N74LS353N N74LS353D LS353 500ns 1N916, | |
Contextual Info: KAI-16070 IMAGE SENSOR 4864 H X 3232 (V) INTERLINE CCD IMAGE SENSOR JUNE 4, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 2.1 PS-0010 KAI-16070 Image Sensor TABLE OF CONTENTS Summary Specification . 5 |
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KAI-16070 PS-0010 PS-0010 | |
Contextual Info: KAI-16070 IMAGE SENSOR 4864 H X 3232 (V) INTERLINE CCD IMAGE SENSOR APRIL 29, 2013 DEVICE PERFORMANCE SPECIFICATION REVISION 2.0 PS-0010 KAI-16070 Image Sensor TABLE OF CONTENTS Summary Specification . 5 |
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KAI-16070 PS-0010 PS-0010 | |
TPCF8102
Abstract: A2430
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TPCF8102 TPCF8102 A2430 | |
TPCF8102Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) |
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TPCF8102 TPCF8102 | |
TPCF8102Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) · High forward transfer admittance: |Yfs| = 14 S (typ.) |
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TPCF8102 TPCF8102 | |
Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) |
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TPCF8102 | |
TPCF8102Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: |Yfs| = 14 S (typ.) |
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TPCF8102 TPCF8102 |