F18N10CS
Abstract: RFB18N10CS F18N10 CA3094 ds 1425 AN7254 AN7260 isd 1425 RFB18N10
Text: RFB18N10CS 18A, 100V, 0.100 Ohm, Current Sensing, N-Channel Power MOSFET August 1997 Features Description • 18A, 100V The RFB18N10CS is an N-Channel enhancement-mode silicon-gate power field-effect transistor which has a built-in current sensing function. The current sense lead provides an
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RFB18N10CS
RFB18N10CS
-55oC
175oC
F18N10CS
F18N10
CA3094
ds 1425
AN7254
AN7260
isd 1425
RFB18N10
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Untitled
Abstract: No abstract text available
Text: 4 3 0 3 2 7 1 D O S M f l n ffl HUSK’S April 1993 « m HAS RFB18N10CS Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Package Features TS-001AA TOP VIEW • 18A, 100V • rDS ON .° ' 1£i
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RFB18N10CS
TS-001AA
RFB18N10CS
AN7260)
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F18N10CS
Abstract: RFB18N10CS F18N10 RFB18N10
Text: m RFB18N10CS H A R R IS S E M I C O N D U C T O R Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor Features Package TS-001AA TOP VIEW • 18A, 100V • r D S O N .° ' 1£1
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RFB18N10CS
TS-001AA
RFB18N10CS
AN7254
AN7260)
VOO-28V
F18N10CS
F18N10
RFB18N10
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F18N10CS
Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Text: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl
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43GE271
RFB18N10CS/
1810CS01
RFB18N10CS,
RFB18N10CSVM,
RFB18N10CSHM
AN7254
AN7260.
FB78N70CS,
T-39-90
F18N10CS
n713
18N10CS
f18n10
RFB18N10CSVM
Harris top marking
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