FFP15S60STU
Abstract: No abstract text available
Text: FFP15S60S tm 15A, 600V, STEALTH II Diode Features • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFP15S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as
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FFP15S60S
FFP15S60S
O-220-2L
FFP15S60STU
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F15S60S
Abstract: FFH15S60S FFH15S60STU
Text: Stealth 2 Rectifier FFH15S60S tm Features 15A, 600V Stealth 2 Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The FFH15S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFH15S60S
FFH15S60S
F15S60S
FFH15S60STU
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F15S60S
Abstract: FFPF15S60S FFPF15S60STU
Text: STEALTHTM II Rectifier F15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The F15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF15S60S
FFPF15S60S
F15S60S
FFPF15S60STU
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Untitled
Abstract: No abstract text available
Text: FFH15S60S tm 15 A, 600 V, STEALTH II Diode Features • Stealth Recovery, Trr = 35 ns @ IF = 15 A • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted
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FFH15S60S
FFH15S60S
O-247-2L
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Untitled
Abstract: No abstract text available
Text: Stealth 2 Rectifier FFH15S60S tm Features 15A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 35ns @ IF = 15A • High Reverse Voltage and High Reliability The FFH15S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial
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FFH15S60S
FFH15S60S
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier F15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The F15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF15S60S
FFPF15S60S
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F15S60S
Abstract: FFP15S60S FFP15S60STU
Text: STEALTH II Rectifier FFP15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The FFP15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP15S60S
FFP15S60S
F15S60S
FFP15S60STU
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Untitled
Abstract: No abstract text available
Text: FFP15S60S tm 15 A, 600 V, STEALTH II Diode Features • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFP15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power
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FFP15S60S
FFP15S60S
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power diode 600V 15A
Abstract: No abstract text available
Text: FFH15S60S tm 15A, 600V, STEALTH II Diode Features • Stealth Recovery, Trr = 35 ns @ IF = 15 A • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH15S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted
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FFH15S60S
FFH15S60S
O-247-2L
power diode 600V 15A
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Untitled
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 35ns @ IF = 15A • High Reverse Voltage and High Reliability The FFP15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP15S60S
FFP15S60S
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F15S60S
Abstract: FFPF15S60S FFPF15S60STU
Text: STEALTHTM II Rectifier F15S60S tm Features 15A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 35ns @ IF = 15A The F15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF15S60S
FFPF15S60S
F15S60S
FFPF15S60STU
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