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    F10F Search Results

    F10F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NRF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GNF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
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    F10F Price and Stock

    3peak Incorporated TPL710F10-FR

    LOW QUIESCENT CURRENT LINEAR REG
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    DigiKey TPL710F10-FR Digi-Reel 12,000 1
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    TPL710F10-FR Reel 12,000 12,000
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    TPL710F10-FR Cut Tape 12,000 1
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    STMicroelectronics STP80NF10FP

    MOSFET N-CH 100V 38A TO220FP
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    DigiKey STP80NF10FP Tube 1,042 1
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    Mouser Electronics STP80NF10FP 1,118
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    Newark STP80NF10FP Bulk 307 1
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    STMicroelectronics STP80NF10FP 1,118 1
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    TME STP80NF10FP 148 1
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    ComSIT USA STP80NF10FP 899
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    Avnet Silica STP80NF10FP 600 17 Weeks 50
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    EBV Elektronik STP80NF10FP 950 27 Weeks 50
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    Vishay Semiconductors VS-10ETF10FP-M3

    DIODE GP 1KV 10A TO220-2FP
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    DigiKey VS-10ETF10FP-M3 Tube 472 1
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    Adam Technologies Inc PH1-3F-10-FVP-24415-C1

    CONN PAD FOR SPRING PINS 1X10
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    DigiKey PH1-3F-10-FVP-24415-C1 Bulk 344 1
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    Adam Technologies Inc PH2-3F-10-FVP-24415-C1

    CONN PAD FOR SPRING PINS 2X5
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    DigiKey PH2-3F-10-FVP-24415-C1 Bulk 260 1
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    F10F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    F10F Raltron Electronics SURFACE MOUNT MONOLITHIC CRYSTAL FILTER Original PDF
    F10F6N Shindengen Electric Power MOSFET 60V 10A Scan PDF
    F10F6N Shindengen Electric 60V 10A Power MOSFET Scan PDF

    F10F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


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    PDF 2SK2799 F10F35VX2) FTO-220

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original
    PDF 2SK2559 F10F20VZ FTO-220 2-24V

    F10F35VX2

    Abstract: 2SK2799
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original
    PDF 2SK2799 F10F35VX2) FTO-220 Singl001 F10F35VX2 2SK2799

    2SK2188

    Abstract: F10F50VX2 2sk21
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2188 F10F50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 500V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original
    PDF 2SK2188 F10F50VX2) FTO-220 Aval01 2SK2188 F10F50VX2 2sk21

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2490 F10F18VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 180V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original
    PDF 2SK2490 F10F18VZ FTO-220 2-24V

    2SK2559

    Abstract: No abstract text available
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original
    PDF 2SK2559 F10F20VZ FTO-220 2-24V 2SK2559

    2SK2559

    Abstract: No abstract text available
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2559 F10F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original
    PDF 2SK2559 F10F20VZ FTO-220 2-24V 2SK2559

    2SK2490

    Abstract: F10F18VZ
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2490 F10F18VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 180V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original
    PDF 2SK2490 F10F18VZ FTO-220 2-24V 2SK2490 F10F18VZ

    2sk2799

    Abstract: F10F35VX2 mosfet 350v 10A
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 350V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original
    PDF 2SK2799 F10F35VX2) FTO-220 Aval001 2sk2799 F10F35VX2 mosfet 350v 10A

    2sk2188

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2188 F10F50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 500V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original
    PDF 2SK2188 F10F50VX2) FTO-220 2sk2188

    2SK2188

    Abstract: F10F50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2188 F10F50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 500V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original
    PDF 2SK2188 F10F50VX2) FTO-220 Singl01 2SK2188 F10F50VX2

    2SK2490

    Abstract: F10F18VZ
    Text: SHINDENGEN VZ Series Power MOSFET 2SK2490 F10F18VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 180V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original
    PDF 2SK2490 F10F18VZ FTO-220 2-24V 2SK2490 F10F18VZ

    PAXI

    Abstract: No abstract text available
    Text: High-Performance 8-Bit Microcontrollers Z8 Encore! XP F0830 Series Product Specification PS025107-1206 This publication is subject to replacement by a later edition. To determine whether a later edition exists, or to request copies of publications, visit www.zilog.com.


    Original
    PDF F0830 PS025107-1206 PAXI

    LMS adaptive filter

    Abstract: ECHO canceller IC F12-F0 LMS adaptive Filters RLS ALGORITHM adaptive beamforming 5.1 5 band equalizer adaptive algorithm APPLICATION circuit diagram fir filters autocorrelation
    Text: Adaptive Filters 6.1 6 INTRODUCTION Fixed-frequency-response digital filters were discussed in the two previous chapters. This chapter looks at filters with a frequency response, or transfer function, that can change over time to match desired system characteristics.


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    PDF

    K2283

    Abstract: 2SK2283 F10F6N
    Text: 60Vv'J-X /17-M O S F E T J; 60V SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2283 F10F6N 60v 10a fètëm • R A T IN G S ■ $ÊÎÎ:SI^5ËÎ& A b s o lu t e Maximum R a tin g s g m 15 item S t o r a g e T e m p e r a tu r e 'f ' ■V -t' C h a n n e l T e m p e r a tu r e


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    PDF /17-MOSFET 2SK2283 F10F6N) FTO-220 K2283 K2283 2SK2283 F10F6N

    Untitled

    Abstract: No abstract text available
    Text: 6 0 V i/'J -X /17-M OSFET 6 0 V SERIES POWER MOSFET O U T L IN E D IM E N S IO N S 2SJ370 F10F6P -60v 10a - R A TIN G S A b s o lu te Maxim um R a tin g s m Id H Symbol Fi Ite m S t o r a g e T e m p e r a tu r e f- \ 'I C h a n n e l T e m p e r a tu r e


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    PDF /17-M 2SJ370 F10F6P)

    Untitled

    Abstract: No abstract text available
    Text: 6 0 V v U - X /tr7—MOSFET M m 6 0 V SERIES POWER MOSFET xyn yz* > i*m O U T L IN E D IM E N S IO N S 2SJ370 F10F6P I Æ fë ü R A TIN G S l Î ê & l 'Î t ^ A Ë f è •* A b s o l u t e M ax im u m R a t i n g s Item ■ s Y —b • v - x^S G a te ‘ S o u rc e V o lta g e


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    PDF 2SJ370 F10F6P) fi5n307 DDD2224

    2SK2283

    Abstract: F10F6N 60v 10a p type mosfet
    Text: s lllö ie i is # « « is t i 60V ->'J-X /'Î9 —MOSFET 60V SERIES POWER MOSFET . x > ; \ > x * > hM 1 O U T L IN E D IM E N S IO N S 2SK2283 F10F6N • R A TIN G S ■ Absolute Maximum Ratings m Item g b£ S to ra g e Tem perature ■f-v * Channel Tem perature


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    PDF 60vvu-x F10F6N) FTO-220 000211S 2SK2283 CF10F6N) F10F6N 60v 10a p type mosfet

    Untitled

    Abstract: No abstract text available
    Text: 6 0 V > U -X A '? —MOSFET p -j X* a. 60V SERIES POWER MOSFET > sgï O U T L IN E D IM E N S IO N S 2SJ370 F10F6P - 60v I 10a - R A T IN G S IÎÊ ÎÎH f;£ :5 Ë !fê A b s o lu te M axim um R a tin g s ah; m ríl! S ym bol Item Wf í ií I li í í U n it


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    PDF 60vs/U-X FTO-220 cycleSI/100

    Untitled

    Abstract: No abstract text available
    Text: V X - IIv 'J - X /Î9 -M 0 S F E T V X-ÏÏ SERIES POWER MOSFET N-^-Y'ŸJk X > A > 7 .P < > h S O U T L IN E D IM E N S IO N S 2SK2188 F10F50VX2 500V 10A R A TIN G S • A b s o lu te Maxim um R a tin g s II Item @ IE iS f f iS / t S to ra g e T e m perature


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    PDF 2SK2188 F10F50VX2)

    Untitled

    Abstract: No abstract text available
    Text: 6 0 V '> 'j-X M 9-M 0SFET 60V SERES POWER MOSFET O U T L IN E D IM E N S IO N S 2SK2283 F10F6N 60v 10a • R A TIN G S ■ Î Ê Î 'M B ^ S Ë Î S m A b s o lu te Item M a x im u m R a tin g s tt h n Sym bol { {■¡un.llc. *8 C o n d itio n s fê R a tin g s


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    PDF 2SK2283 F10F6N F10F6N)

    PIC1655A

    Abstract: No abstract text available
    Text: PIC1655A O S J r fS S w X _ ADVANCE INFOBMATJOW Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have 'p r e - p r o d u c tio n ’ status. Details given may, therefore, change without notice although we would expect this performance data to be


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    108j

    Abstract: TO-251AA 6VQ10CT
    Text: Schottky Barrier Diode-ûual Io A Case Style TO-251AA Vr r m (V) vfm (V) TO-252AA 0.55 2.2 0.58 0.85 . 0.55 0.60 4.4 0.85 T Y PE Number 30 40 50 60 90 100 30 40 50 60 90 100 ♦ 2VQ03CT 2VQ04CT 2VQ05CT 2VQ06CT 2VQ09CT 2VQ10CT 4VQ03CT 4VQ04CT 4VQ05CT


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    PDF O-251AA O-252AA 2VQ03CT 2VQ04CT 2VQ05CT 2VQ06CT 2VQ09CT 2VQ10CT 4VQ03CT 4VQ04CT 108j TO-251AA 6VQ10CT

    Untitled

    Abstract: No abstract text available
    Text: . * P o w e r ' 1. Absolute M O S F E T Specification Maximum Ratings Item Symbol Ratings Unit - 5 5 - 1 5 0 1C Condition Storage Temperature T s tg Channel Temperature ^ch 1 5 0 V Drain-Source Voltage V dss 2 00 V Gate-Sourse Voltage V ±3 0 V Drain Current


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    PDF 2SK2559