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    2SK21 Search Results

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    2SK21 Price and Stock

    Rochester Electronics LLC 2SK2158A-T1B-AT

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2158A-T1B-AT Bulk 662,805 1,623
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    Rochester Electronics LLC 2SK2170-TL-E

    NCH J-FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2170-TL-E Bulk 105,000 2,219
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    Rochester Electronics LLC 2SK2157C-T1-AZ

    2SK2157C-T1-AZ - N-CHANNEL MOS F
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    DigiKey 2SK2157C-T1-AZ Bulk 34,552 372
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    Rochester Electronics LLC 2SK2111(0)-T1-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 2SK2111(0)-T1-AZ Bulk 24,000 650
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    Rochester Electronics LLC 2SK2111-T1-AZ

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SK2111-T1-AZ Bulk 20,932 650
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    Find more 2SK21 price and stock on Findchips.com

    2SK21 Datasheets (493)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK21 Unknown FET Data Book Scan PDF
    2SK210 Toshiba N-Channel MOSFET Original PDF
    2SK210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK210 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK210 Unknown FET Data Book Scan PDF
    2SK210 Unknown Scan PDF
    2SK210 Toshiba Field Effect Transistor Silicon N Channel Junction Type Scan PDF
    2SK210 Toshiba SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO Scan PDF
    2SK210 Toshiba Silicon N channel field effect transistor for FM tuner applications and VHF band amplifier applications Scan PDF
    2SK210 Toshiba Junction FETs / MOSFET / Transistors Scan PDF
    2SK2100-01MR Fuji Electric Power MOSFET Scan PDF
    2SK2101-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2101-01MR Fuji Electric N-channel MOS-FET Original PDF
    2SK2102 ROHM Silicon N-Channel MOSFET Scan PDF
    2SK2103 ROHM Small switching (30V, 2A) Original PDF
    2SK2103 ROHM Power MOSFETs Scan PDF
    2SK2103T100 ROHM TRANS MOSFET N-CH 30V 2A 3SC-62 T/R Original PDF
    2SK2103T100 ROHM Small Switching (30 V, 2 A) Original PDF
    2SK2104 ROHM Power MOSFET Scan PDF
    2SK2104 ROHM Power MOSFET Scan PDF
    ...

    2SK21 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DSA007622

    Abstract: No abstract text available
    Text: 2SK210 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications Unit: mm • High power gain: GPS = 24dB typ. (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)


    Original     		2SK210 SC-59 DSA007622 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2162 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 2 1 62 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • INDUSTRIAL APPLICATIONS Unit in mm High Breakdown Voltage : V j gg= 180V High Forward Transfer Admittance : |Yfs|=0.7S Typ.)


    OCR Scan     		2SK2162 2SJ338 PDF

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2177 N-Channel Enhancement type OUTLINE DIMENSIONS F1E50VX2 Case : E-pack (Unit : mm) 500V 1A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		2SK2177 F1E50VX2) PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter


    Original     		2SK2144 REJ03G1001-0200 ADE-208-1349) PRSS0003AE-A O-220Câ PDF

    2SK210

    Abstract: No abstract text available
    Text: SILICON N CHANNEL JUNCTION TYPE 2SK210 U nit in mm FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. + Ü5 2 .5 -0 1 3 + Û2 5 1 .5 - t t 1 5 • High Power Gain : G ps = 24dB Typ. (f= 100MHz) • Low Noise Figure : N F= 1.8dB (Typ.) (f= 100MHz) •


    OCR Scan     		2SK210 100MHz) SC-59 2SK210 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications


    Original     		2SK2166-01R PDF

    2SK2149

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Semiconductors 2SK2149 Unit in mm Silicon N Channel MOSType c - MOS IV High Speed, High Current Switching Applications. Chopper Regulator, DC-D C Converter and Motor Drive Applications. • Low Drain-Source ON Resistance: läs(ON) = 0.6i2 (Typ.)


    OCR Scan     		2SK2149 PDF

    2SK2145

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • . • • + 0.2 Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfs| : |Yfs| = 15mS (Typ.) at VDS = 10V, VGS = 0


    OCR Scan     		2SK2145 --50V --30V 2SK2145 PDF

    2SK2146

    Abstract: H1 SOT-89
    Text: TOSHIBA • ^ 7 2 5 0 0Q2337D f l ^ T O S H IB A FIELD EFFECT T R A N S IS T O R 2SK2146 SILIC O N N C H A N N E L M O S T Y P E 2 S K 2 1 46 H IG H S PEED , HIGH C U R R E N T S W IT C H IN G A P P L IC A T IO N S C H O P P E R R E G U L A T O R , DC-DC C O N V E R T E R A N D M O T O R D R IV E


    OCR Scan     		2337D 2SK2146 20kfi) O-22QAB O-220 50URCE O-220FL 00E3b43 O-220SM H1 SOT-89 PDF

    smd marking g23

    Abstract: SOT-23 marking g23
    Text: MOSFET SMD Type Product specification 2SK2158 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 consider driving current. 0.55 Because of high input impedance, there is no need to +0.1 1.3-0.1 +0.1 2.4-0.1 Capable of drive gate with 1.5 V 2 +0.1 0.95-0.1


    Original     		2SK2158 OT-23 smd marking g23 SOT-23 marking g23 PDF

    K2162

    Abstract: 2SJ338 2SK2162
    Text: 2SK2162 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2162 ○ 低周波電力増幅用 5.2 ± 0.2 : VDSS = 180 V 高順方向伝達アドミタンスです。 : |Yfs| = 0.7 S 標準 2SJ338 とコンプリメンタリになります。


    Original     		2SK2162 2SJ338 SC-64 K2162 2002/95/EC) K2162 2SJ338 2SK2162 PDF

    2SK2171

    Abstract: No abstract text available
    Text: Ordering number:ENN4871 N-Channel Junction Silicon FET 2SK2171 High-Frequency, Low-Frequency Amplifier Analog Switch Applications Features Package Dimensions • Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.


    Original     		ENN4871 2SK2171 2SK2171] 25max 2SK2171 PDF

    dc-dc converter hitachi

    Abstract: HITACHI DIODE 2SK1404 2SK2118 DSA003639
    Text: 2SK2118 Silicon N-Channel MOS FET ADE-208-1348 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control


    Original     		2SK2118 ADE-208-1348 O-220CFM dc-dc converter hitachi HITACHI DIODE 2SK1404 2SK2118 DSA003639 PDF

    2SK2124

    Abstract: DSA003718
    Text: Power F-MOS FETs 2SK2124 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 130mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 60ns ● No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2


    Original     		2SK2124 130mJ O-220E 2SK2124 DSA003718 PDF

    2SK213 2Sk214

    Abstract: 2SK216 j78 transistor 2SK214 2SK213 2SK215 2SJ76 2sk216 equivalent C2575
    Text: 2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application TO–220AB High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features • • • • 3 Suitable for direct mounting High forward transfer admittance


    Original     		2SK213, 2SK214, 2SK215, 2SK216 220AB 2SJ76, 2SK213 2SK214 2SK215 2SK213 2Sk214 2SK216 j78 transistor 2SK214 2SK213 2SK215 2SJ76 2sk216 equivalent C2575 PDF

    toshiba audio power amplifier

    Abstract: Audio Power Amplifier TOSHIBA 2SJ338 2SK2162
    Text: 2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2162 Maximum Ratings (Ta = 25°C)


    Original     		2SJ338 2SK2162 SC-64 toshiba audio power amplifier Audio Power Amplifier TOSHIBA 2SJ338 2SK2162 PDF

    2SK1155

    Abstract: 2SK1156 2SK2114 2SK2115 DSA003639
    Text: 2SK2114, 2SK2115 Silicon N-Channel MOS FET ADE-208-1346 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator


    Original     		2SK2114, 2SK2115 ADE-208-1346 O-220CFM 2SK2114 2SK1155 2SK1156 2SK2114 2SK2115 DSA003639 PDF

    DIODE OA10

    Abstract: oa10 diode
    Text: bl E D • M ateos 001301b 3T3 IHIT4 2SK213,2SK214. 2SK215,2SK216 H I T A C H I / O P T O E L E C T R O N I C S SILICON N-CHANNEL MOS FET HIGH FREQUENCY ANO LOW FREQUENCY POWER AMPLIFIER. HIGH SPEED SW ITCHING Ed Complementary Pair with 2SJ76, J77, J 7 8 r


    OCR Scan     		001301b 2SK213 2SK214. 2SK215 2SK216 2SJ76, O-220AB) 2SK214 DIODE OA10 oa10 diode PDF

    2SK2133

    Abstract: 2SK2133-Z MP-25
    Text: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2133, 2SK2133-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK2133, 2SK2133-Z are N-channel Power MOS Field Effect Unit : mm Transistors designed for high voltage switching applications.


    OCR Scan     		2SK2133, 2SK2133-Z 2SK2133 MP-25 O-220AB) 2SK2133-Z 2SK2133 MP-25 PDF

    2SK210

    Abstract: marking ADMI
    Text: 2SK210 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 -0 .3 + 0 .2 5 1 .5 - Q l 5 • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure


    OCR Scan     		2SK210 100MHz) SC-59 100MHz 200i----- 2SK210 marking ADMI PDF

    TEA-1035

    Abstract: TEA1035 APPLICATION NOTE TEA-1035 2SK2131 MEI-1202 tea 1035
    Text: DATA SHEET i MOS FIELD EFFECT POWER TRANSISTOR 2SK2131 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2131 is N -channel M O S Field Effect Transistor in m illim eters designed fo r solenoid, m o to r and lam p driver.


    OCR Scan     		2SK2131 2SK2131 IEI-1209) TEA-1035 TEA1035 APPLICATION NOTE TEA-1035 MEI-1202 tea 1035 PDF

    2SK2146

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2146 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII .5 2 S K 2 1 46 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A TIO N S U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		2SK2146 2SK2146 PDF

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2183 F5V50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case Case : E-pack TO-220 (Unit : mm) 500V 5A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		2SK2183 F5V50VX2) O-220 PDF

    IDA100

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2187 F10S50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : STO-220 Case E-pack (Unit : mm) 500V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		2SK2187 F10S50VX2) STO-220 IDA100 PDF