F1063 Search Results
F1063 Price and Stock
Harwin M80-4000000F1-06-325-00-000CONN RCPT 6POS SOLDER 12AWG GOLD |
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M80-4000000F1-06-325-00-000 | Each | 27 |
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M80-4000000F1-06-325-00-000 | 315 | 9 Weeks | 27 |
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Samtec Inc S1SS-08-28-GF-10.63-L1MICRO MATE SINGLE ROW DISCRETE W |
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S1SS-08-28-GF-10.63-L1 | Bulk | 111 Weeks | 1 |
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3M 1350F-1-0.63-X72YD-YELLOWTAPE FILM YELLOW 5/8"X72YDS |
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Samtec Inc SFSD-07-28-F-10.63-DL-NUSDOUBLE ROW DISCRETE WIRE ASSEMBL |
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Harwin M80-4D10805F1-06-327-00-0008+6 POS. FEMALE 22AWG+16AWG CABL |
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F1063 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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F1063 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | |||
F10631 |
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High Speed Dual D Flip-Flop | Original |
F1063 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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F1063Contextual Info: polyfet rf devices F1063 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
F1063 F1063 | |
ilh25Contextual Info: F10231 • F10631 HIGH SPEED DUAL D FLIP-FLOP F10K VOLTAGE COMPENSATED ECL DESCRIPTION - The F10231/F10631 contains two master/slave D-type flip-flops. The internal clock is the OR of two clock inputs, one common to both flip-flops. The OR clock permits the use of one input as a clock pulse and the other as an active LOW enable. |
OCR Scan |
F10231 F10631 F10231/F10631 ilh25 | |
02NG
Abstract: F10231 F10631
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OCR Scan |
F10231^ F10631^ F10231/F10631 1x222 02NG F10231 F10631 | |
Contextual Info: polyfet rf devices F1063 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
OCR Scan |
F1063 1110AvenidaAcaso, | |
Contextual Info: polyfet rf devices F1063 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
F1063 | |
Contextual Info: F102311* F10631^ HIGH SPEED DUAL D FLIP-FLOP F10K VOLTAGE COMPENSATED ECL DESCRIPTION - The F10231/F10631 contains two master/slave D-type flip-flops. The internal clock is the O R of two clock inputs, one common to both flip-flops. The O R clock permits the use of one input a s a clock pulse and the other a s an active LO W enable. |
OCR Scan |
F102311* F10631^ F10231/F10631 1x222 | |
220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
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P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor | |
LC1 D35
Abstract: C10681
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Original |
C/220Â FA10328 FA10304 FA10305 FA10343 C10267 C10437 LC1 D35 C10681 |