EPA080A-100P
Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.
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EPA025A70
Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
Contextual Info: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB
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RTC/10/01/98
EPA080A
12GHz
EPA060B
EPA040A
EPA025A
V/15mA
V/10mA
EPA025A70
EPA060B-70
EFA018A
EPA060B
EPA025
EPA025A
EPB018A5
EPA018A
EPA080A-70
EPA080A
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EPA025A
Abstract: Excelics EPA025A
Contextual Info: Excelics EPA025A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +22.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
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EPA025A
12GHz
8V710
Rn/50
EPA025A
Excelics EPA025A
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EPA018A
Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
Contextual Info: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the
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EPA018A
EPA025A
EPA030C
EPA040A
EPA060A
EFA480B
EFA480C
EFA720A
EFA960B
EFA1200A
EPA018A
EPA060B
EFA018A
Excelics EPA018A
EPA480C
EPA025A
EPA040A
EPA060A
EPA240D
EPA030C
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EPA025A-70
Abstract: 0466 1.5 micron
Contextual Info: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET 6 6 ' • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz
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EPA025A-70
70mil
18GHz
12GHz
Rn/50
EPA025A-70
0466 1.5 micron
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EPA025A
Abstract: 421-5 MAG EPA025 Excelics EPA025A
Contextual Info: EPA025A High Efficiency Heterojunction Power FET • • • • • • 420 +22.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION
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EPA025A
12GHz
EPA025A
421-5 MAG
EPA025
Excelics EPA025A
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Curtice
Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
Contextual Info: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE
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EFA018A
00E-12
40E-14
00E-08
63E-13
80E-14
00E-14
EFA025A
Curtice
EFA018A
EPA030A
EPA480C
EPA060B
EFA040A
EFA025A
EPA025
220E-12
Excelics EPA018A
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