EXCELICS EPA025 Search Results

EXCELICS EPA025 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
OPA549TG3		Texas Instruments	High-Voltage, High-Current Op Amp, Excellent Output Swing 11-TO-220 -40 to 85

EXCELICS EPA025 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF
EPA025A70 Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A Text: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB	Original	RTC/10/01/98 EPA080A 12GHz EPA060B EPA040A EPA025A V/15mA V/10mA EPA025A70 EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A	PDF
EPA025A Abstract: Excelics EPA025A Text: Excelics EPA025A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +22.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE	Original	EPA025A 12GHz 8V710 Rn/50 EPA025A Excelics EPA025A	PDF
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C	PDF
EPA025A-70 Abstract: 0466 1.5 micron Text: Excelics EPA025A-70 DATA SHEET High Efficiency Heterojunction Power FET 6 6 ' • • • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +21.5dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 18GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz	Original	EPA025A-70 70mil 18GHz 12GHz Rn/50 EPA025A-70 0466 1.5 micron	PDF
EPA025A Abstract: 421-5 MAG EPA025 Excelics EPA025A Text: EPA025A High Efficiency Heterojunction Power FET • • • • • • 420 +22.5dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18 GHz TYPICAL 0.85dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPA025A 12GHz EPA025A 421-5 MAG EPA025 Excelics EPA025A	PDF
epa025 Abstract: excelics epa025 EFA072A EFA025A excelics w2343 AVANTEK transistor Text: Hydrogen Test on EFA072A and EFA025A Background It was reported from the field that when EFA072A devices from W234-2 were life tested in hydrogen environment, the Idss of the DUT has increased by 15% or so in a few days. However, when the devices were life tested in open air	Original	EFA072A EFA025A W234-2 EFA072 W234-3, 48hrs) 168hrs) epa025 excelics epa025 EFA025A excelics w2343 AVANTEK transistor	PDF
Curtice Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE	Original	EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A	PDF