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    EXCEL SEMICONDUCTOR INC Search Results

    EXCEL SEMICONDUCTOR INC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    SCR410T-K03-PCB Murata Manufacturing Co Ltd 1-Axis Gyro Sensor on Evaluation Board Visit Murata Manufacturing Co Ltd

    EXCEL SEMICONDUCTOR INC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Teradyne

    Abstract: teradyne tester test system ziatech
    Text: ISP Cost-of-Ownership Click on one of the following choices: • • • • ISP Cost-of-Ownership Excel v.5 Worksheet Excel v.4 Worksheet Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. TM ISP Cost-of-Ownership Analysis ISP Cost-of-Ownership


    Original     		PDF

    irf44z

    Abstract: 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent
    Text: MOTOROLA Order this document by AN1520/D SEMICONDUCTOR APPLICATION NOTE AN1520 HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications Prepared by: Scott Deuty, Applications Engineer Motorola Inc. A new technology, HDTMOS, was recently introduced


    Original     		AN1520/D AN1520 AN1520/D* irf44z 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent PDF

    ES25P40

    Abstract: No abstract text available
    Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P40 4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations


    Original     		ES25P40 75Mhz 66MHz 75MHz. ES25P40 PDF

    ES25P16

    Abstract: SA28 SA29 SA30 208mil
    Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P16 16Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations


    Original     		ES25P16 16Mbit 75Mhz 66MHz 75MHz ES25P16 SA28 SA29 SA30 208mil PDF

    12 volt dc to 220 volt ac inverter 1000 watts

    Abstract: 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit
    Text: BIPOLAR TRANSISTORS EXCEL IN OFF-LINE RESONANT CONVERTERS Prepared by Jim Spangler, Applications Engineer Motorola Semiconductor Products Inc Phoenix, Az. Reprinted with permission of POWERTECHNICS, March, 1986 issue. 1986 Darnell Research Inc. All rights reserved.


    OCR Scan     		AR181/D 12 volt dc to 220 volt ac inverter 1000 watts 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit PDF

    E0000

    Abstract: ES25P80 SA10 SA11 SA12 SA13 SA14 SA15
    Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P80 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations


    Original     		ES25P80 75Mhz 66MHz 75MHz. E0000 ES25P80 SA10 SA11 SA12 SA13 SA14 SA15 PDF

    ES29LV160DB-90TG

    Abstract: si 462 laser diode ES29LV160D 12wg ES29LV160DT
    Text: EE SS II - Preliminary - Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory - Preliminary Draft - GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC


    Original     		ES29LV160D 16Mbit 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV160DT ES29LV160DB 48-pin 48-ball ES29LV160DB-90TG si 462 laser diode ES29LV160D 12wg PDF

    ES29LV320

    Abstract: ES29LV320D
    Text: EE SS II - Preliminary - Excel Semiconductor inc. ES29LV320D 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory - Preliminary Draft - GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC


    Original     		ES29LV320D 32Mbit 125oC 64Kbyte 256byte ES29LV320DT ES29LV320DB ES29LV320 ES29LV320D PDF

    ES29DL320

    Abstract: 3FE00
    Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES29DL320 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL FEATURES • Power consumption (typical values) - 15uA in standby or automatic sleep mode - 10mA active read current at 5MHz


    Original     		ES29DL320 32Mbit 125oC ES29DL320 3FE00 PDF

    ES29LV400D

    Abstract: ES29LV400DT-70RTG ES29LV400DB-70RTG
    Text: EE SS II Excel Semiconductor inc. ES29LV400D 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		ES29LV400D 512Kx 8/256K 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV400DT ES29LV400DB 48-pin ES29LV400D ES29LV400DT-70RTG ES29LV400DB-70RTG PDF

    ES29LV160D

    Abstract: es29lv160dt-70rtci ES29LV160DT-70RTG ES29LV160DT-70RTC
    Text: EE SS II Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		ES29LV160D 16Mbit 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV160DT ES29LV160DB 48-pin 48-ball ES29LV160D es29lv160dt-70rtci ES29LV160DT-70RTG ES29LV160DT-70RTC PDF

    ES29LV400EB-70TGI

    Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
    Text: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		ES29LV400E 512Kx 8/256K 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV400ET ES29LV400EB 48-pin ES29LV400EB-70TGI ES29LV400EB-70TG ES29LV400E BB 555 PDF

    MT48LC2M32B2-5

    Abstract: timing analysis example MSC8122 MT48LC2M32B2 AN3014 MSC8122MP8000 MSC8122TMP4800V MSC8122TMP6400 MSC8122TVT4800V MSC8122TVT6400
    Text: Freescale Semiconductor Application Note AN3014 Rev. 1, 8/2007 AC Timing Analysis Between SDRAM and the StarCore -Based MSC8122 DSP By Boaz Kfir This application note and the associated Excel spreadsheet assist in the analysis of AC timing for the interface between an


    Original     		AN3014 MSC8122 MSC8122 AN3014SW) MT48LC2M32B2-5 timing analysis example MT48LC2M32B2 AN3014 MSC8122MP8000 MSC8122TMP4800V MSC8122TMP6400 MSC8122TVT4800V MSC8122TVT6400 PDF

    ES29LV160EB-70TGI

    Abstract: es29lv160eb-70tg ES29LV160EB-70WGI ES29LV160E ES29LV160EB-70TCI EXCEL SEMICONDUCTOR INC
    Text: EE SS II Excel Semiconductor inc. ES29LV160E 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		ES29LV160E 16Mbit 125oC 16Kbyte 32Kbyte 64Kbyte ES29LV160ET ES29LV160EB 48-pin 48-ball ES29LV160EB-70TGI es29lv160eb-70tg ES29LV160EB-70WGI ES29LV160E ES29LV160EB-70TCI EXCEL SEMICONDUCTOR INC PDF

    ES29LV320EB-70TG

    Abstract: es29lv320eb-70tgi ES29LV320E si 462 laser diode ES29LV320 ES29LV320ET-70WGI ES29LV320ET-70TGI
    Text: EE SS II Excel Semiconductor inc. ES29LV320E 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V ~ 3.6V for read, program and erase operations


    Original     		ES29LV320E 32Mbit 125oC 64Kbyte 256byte ES29LV320ET ES29LV320EB ES29LV320EB-70TG es29lv320eb-70tgi ES29LV320E si 462 laser diode ES29LV320 ES29LV320ET-70WGI ES29LV320ET-70TGI PDF

    ES29LV800DB-90TG

    Abstract: ES29LV800 ES29LV800DB-12TG ES29LV800D ES29LV800DB-70WG ES29lv800dt-70 000000X ES29LV800DB-70WGI ES29LV800DB-70TG ES29LV800DB-70TC
    Text: EE SS II Excel Semiconductor inc. ES29LV800D 8Mbit 1M x 8/512K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		ES29LV800D 8/512K 125oC 16Kbyte 32Kbyte 64Kbyte 15sectors ES29LV800DT ES29LV800DB 48-pin ES29LV800DB-90TG ES29LV800 ES29LV800DB-12TG ES29LV800D ES29LV800DB-70WG ES29lv800dt-70 000000X ES29LV800DB-70WGI ES29LV800DB-70TG ES29LV800DB-70TC PDF

    ES29LV320DB-80RTG

    Abstract: ES29LV320 ES29LV320D
    Text: EE SS II Excel Semiconductor inc. ES29LV320D 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		ES29LV320D 32Mbit 125oC 64Kbyte 256byte ES29LV320DT ES29LV320DB ES29LV320DB-80RTG ES29LV320 ES29LV320D PDF

    ES29LV800EB-70TG

    Abstract: es29lv800et-70tg ES29LV800ET-70WC ES29LV800 ES29LV800E ES29LV800ET-70TGI ES29LV800EB-70TGI ES29LV800ET70TG ES29LV800EB
    Text: EE SS II Excel Semiconductor inc. ES29LV800E 8Mbit 1M x 8/512K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations


    Original     		ES29LV800E 8/512K 125oC 16Kbyte 32Kbyte 64Kbyte 15sectors ES29LV800ET ES29LV800EB 48-pin ES29LV800EB-70TG es29lv800et-70tg ES29LV800ET-70WC ES29LV800 ES29LV800E ES29LV800ET-70TGI ES29LV800EB-70TGI ES29LV800ET70TG PDF

    k98m

    Abstract: MSC8126 AN2905 SC140 DSI spec
    Text: Freescale Semiconductor Application Note AN2905 Rev. 0, 11/2004 Clock Mode Selection for MSC8126 Mask Set K98M By Donald Simon and Wes Ray This application note describes the MSC8126 clock modes for mask set K98M. It also describes a Microsoft Excel application that assists users in determining the internal/external


    Original     		AN2905 MSC8126 MSC8126 0K98M 1K98M k98m AN2905 SC140 DSI spec PDF

    AN2904

    Abstract: MSC8122RM K98M MSC8122 SC140 MSC8122UG
    Text: Freescale Semiconductor Application Note AN2904 Rev. 0, 11/2004 Clock Mode Selection for MSC8122 Mask Set K98M By Donald Simon and Wes Ray This application note describes the MSC8122 clock modes for mask set K98M. It also describes a Microsoft Excel application that assists users in determining the internal/external


    Original     		AN2904 MSC8122 MSC8122 0K98M 1K98M AN2904 MSC8122RM K98M SC140 MSC8122UG PDF

    dhtml introduction

    Abstract: AN2263
    Text: Freescale Semiconductor Application Note AN2263/D 12/2002 Freescale Semiconductor, Inc. PC Master Software: Creation of Advanced Control Pages By Milan Brejl S3L Applications Engineering Freescale Czech Systems Laboratories Roznov pod Radhostem, Czech Republic


    Original     		AN2263/D dhtml introduction AN2263 PDF

    LOGO TD text display

    Abstract: dhtml introduction interface control in visualbasic FRAC16
    Text: Freescale Semiconductor, Inc. Application Note AN2263/D 12/2002 Freescale Semiconductor, Inc. PC Master Software: Creation of Advanced Control Pages By Milan Brejl S3L Applications Engineering Motorola Czech Systems Laboratories Roznov pod Radhostem, Czech Republic


    Original     		AN2263/D LOGO TD text display dhtml introduction interface control in visualbasic FRAC16 PDF

    SBFA001

    Abstract: chebyshev E192 TPS54610 TPS54616 TPS54672 TPS6734 TPS7101 TPS7201 TPS7301 E192
    Text: General Interest Texas Instruments Incorporated Analog design tools By John Bishop Applications Specialist, High-Performance Linear Products Introduction Windows application tools Most analog designers are using design tools developed for use on the computer. Many such tools are available


    Original     		SLYT122 SBFA001 chebyshev E192 TPS54610 TPS54616 TPS54672 TPS6734 TPS7101 TPS7201 TPS7301 E192 PDF

    Product Selector Guide

    Abstract: No abstract text available
    Text: About the ISP Encyclopedia Contents Lattice Semiconductor’s ISP Encyclopedia on CDROM contains the industry’s largest compilation of technical information on ISP programmable logic devices. The ISP Encyclopedia includes the content of the 1996 Data Book, Handbook, and ISP Manual. Together


    Original     		PDF