tanaka TS3332LD epoxy
Abstract: tanaka TS3332LD TS3332LD tanaka epoxy remix capacitors Die Attach epoxy stamping tanaka free circuit diagram of rf id Broadband Amplifiers Application Notes, appendix 3 Thermal Epoxy
Text: Epoxy Die Attach Considerations for HPA MMICs 1 Scope MMICs have been traditionally mounted on a RF circuit board, or directly to a plated metal carrier, using a wide range of conductive epoxies, or eutectic solder (e.g. AuGe, AuSn). Eutectic and epoxy has been used in both
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AuSn eutectic
Abstract: AN3017 k-242 305O self-aligned AuSn solder
Text: Procedure for Multifunction Self-Aligned Gate MSAG AuSn Eutectic Solderability 1. AN3017 Rev — Introduction The following procedure is M/A-COM’s recommended instruction for eutecticly attaching die to pedestals 2. Materials/Supplies 2.1 The following are materials and supplies required to perform eutectic soldering.
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AN3017
AuSn eutectic
AN3017
k-242
305O
self-aligned
AuSn solder
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Untitled
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data MP-06503 MULTI-PURPOSE DIELECTRIC Benefits • Thermal resistance 0.09°Cin2/W (0.58°Ccm2/W) • Thermal conductivity of 1.3 W/m-K • Multi-Purpose applications • Lead-free solder compatible • Eutectic AuSn compatible
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MP-06503
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Untitled
Abstract: No abstract text available
Text: ADL-80Q11CZ AlGaAs Infrared Laser Diode DATE：2008/09/08 Ver 1.0 ★808nm 1W C-Mount PKG • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity Cathode tab (-) Alumina Insulator
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ADL-80Q11CZ
808nm
divers-vis/ari/808nm/
adl-80q11cz
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Untitled
Abstract: No abstract text available
Text: ADL-63V05CZ AlGaInP Red Laser Diode ★635nm 0.5W 30 oC C-Mount PKG with Fast Axis Collimation lens • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity 6. Small aspect ratio
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ADL-63V05CZ
635nm
divers-vis/ari/635nm/
adl-63v05cz
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Untitled
Abstract: No abstract text available
Text: ADL-63V06CZ AlGaInP Red Laser Diode DATE：2008/10/16 Ver 2.0 o ★635nm 0.5W 30 C CT-Mount PKG with Fast Axis Collimation lens • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity
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ADL-63V06CZ
635nm
divers-vis/ari/635nm/
adl-63v06cz
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LED LASER
Abstract: ausn submount
Text: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high
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18-Jul-08
LED LASER
ausn submount
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Untitled
Abstract: No abstract text available
Text: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high
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11-Mar-11
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ausn submount
Abstract: No abstract text available
Text: LSUB Vishay Electro-Films Ceramic Submount for High Power LED FEATURES • Ultra-low thermal resistance • Eutectic or epoxy LED die attach pads • Surface-mounted component assembly APPLICATIONS The LSUB series substrates are ceramic LED package bases designed to provide thermal management for high
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
ausn submount
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CPR3-AN03
Abstract: pressure low die attach UP78 silicon carbide LED cree AuSn eutectic ejector 0.5um silicon carbide LED bonding wire cree
Text: APPLICATION NOTE XThinTM Sn Die Attachment Recommendations This applications note provides the user with a basic understanding of Cree’s new low temperature attach version XThin chips, information on the recommended packaging, and an overview of some constraints to be considered when packaging the chips.
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CPR3-AN02,
CPR3-AN03
pressure low die attach
UP78
silicon carbide LED cree
AuSn eutectic
ejector
0.5um
silicon carbide LED
bonding wire cree
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Alumina ceramic AI203
Abstract: ausi die attach gold metal detectors AI203 gold melting furnace pressure low die attach spot welding schematics ausi die attach thin silicon die Dissolve Oxygen ceramic pin grid array package wire bond
Text: Alumina & Leaded Molded Technology 3 3.1 Introduction The packaging technologies used to manufacture or assemble three basic types of component packages are summarized in this chapter. The package families, described in Chapter 1, provide the functional specialization and diversity
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gold metal detectors
Abstract: epoxy adhesive paste cte table 28 pin ic base socket round pin type lead spot welding schematics soft solder die bonding electrical three phase schematic riser DIAGRAM CERAMIC PIN GRID ARRAY wire lead frame ausi die attach thin silicon die soft solder wire dispensing 10 k ntc thermistor
Text: Component Assembly Technology 3.1 3 Introduction The packaging technologies used to manufacture or assemble Intel’s three basic types of component packages are summarized in this chapter. The package families, described in Chapter 1, provide the functional specialization and diversity
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solid solubility
Abstract: chemical control process block diagram
Text: Component Assembly Technology 3.1 3 Introduction The packaging technologies used to manufacture or assemble Intel’s three basic types of component packages are summarized in this chapter. The package families, described in Chapter 1, provide the functional specialization and diversity
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gold metal detectors
Abstract: soft solder die bonding schematic diagram intel atom INCOMING RAW MATERIAL INSPECTION lead side brazed hermetic X-RAY INSPECTION ausi die attach electrical three phase schematic riser DIAGRAM epoxy adhesive paste cte table intel 24008
Text: 2 3 Component Assembly Technology 1/22/97 9:49 AM CH03WIP.DOC INTEL CONFIDENTIAL until publication date 2 CHAPTER 3 COMPONENT ASSEMBLY TECHNOLOGY 3.1. INTRODUCTION The packaging technologies used to manufacture or assemble Intel’s three basic types of
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CH03WIP
gold metal detectors
soft solder die bonding
schematic diagram intel atom
INCOMING RAW MATERIAL INSPECTION
lead side brazed hermetic
X-RAY INSPECTION
ausi die attach
electrical three phase schematic riser DIAGRAM
epoxy adhesive paste cte table
intel 24008
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Ultrasonic Cleaning Transducer
Abstract: Ultrasonic welding circuit diagram gold metal detectors ultrasonic transducer cleaning bath Ultrasonic nozzle schematic ultrasonic motion detector gold detectors circuit INCOMING RAW MATERIAL INSPECTION soft solder wire dispensing soft solder die bonding
Text: CHAPTER 3 IC ASSEMBLY TECHNOLOGY INTRODUCTION The material and process technology steps used to manufacture or assemble Intel’s three basic types of component packages are summarized in this chapter The package families described in Chapter 1 provide the functional specialization and diversity required by our customers Material and construction attributes of individual family
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AuSn eutectic
Abstract: wire bond recommendations Die Attach and Bonding Guidelines Gan on silicon transistor Gan on silicon substrate AN008 DIE BONDER
Text: Application Note AN-008 Die Attach and Bonding Recommendations Introduction While Nitronex’s core market is packaged RF products, we sell die to select customers for use in modules and subsystems. One benefit of Nitronex GaN devices is they are fabricated on industry standard silicon wafers so
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AN-008
AuSn eutectic
wire bond recommendations
Die Attach and Bonding Guidelines
Gan on silicon transistor
Gan on silicon substrate
AN008
DIE BONDER
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MSTF-2ST-10R00J-G
Abstract: Au Sn eutectic M570 bond wire gold soft solder die bonding 84-1LMI
Text: Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMIC’s Discussion Millimeterwave MMIC's are becoming more common in commercial applications. Their small size and potentially lower cost has made them valuable in the growing market of millimeterwave systems. Their size and delicate nature
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D35BV102KPX
MSTF-2ST-10R00J-G
Au Sn eutectic
M570
bond wire gold
soft solder die bonding
84-1LMI
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Untitled
Abstract: No abstract text available
Text: Heat Sin nks, Stand doffs s & Sh hims s • DLI offe ers numero ous dielecttric options s to suit diifferent the ermal and electrical requirem ments! Each de evice is cu ustom tailored to the customer’’s specifica ations. Please use u the ch hecklist on the final page
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AS9100Â
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Material density CDA 195
Abstract: eutectic 157 CDA 194 olin 7025 Eftec 64t X10-4 resistivity table sn 8400 MF202 silver
Text: Physical Constants of IC Package Materials 5 Table 5-1 through Table 5-9 list typical values for selected properties of materials used in IC packages. Table 5-1. Case Material Characteristics Properties Density Modulus of Elasticity Tensile Strength Alumina
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AuSn solder
Abstract: No abstract text available
Text: V i s h ay I n t e rt e c h n olog y, I n c . I INNOVAT AND TEC O L OGY AuSn Series N HN LASER DIODE SUBSTRATE MOUNTS O 19 62-2012 Resistors - Deposited Gold Tin Thin Film Patterned Substrates with Deposited Gold/Tin Pads Key Benefits • • • • • •
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VMN-PL0464-1202
AuSn solder
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CMM0014-BD
Abstract: No abstract text available
Text: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0014-BD August 2006 - Rev 02-Aug-06 2.0 to 22.0 GHz GaAs MMIC Power Amplifier Chip Diagram Advanced Product Information August 2004 1 of 3 Features Small Size: 45 x 92 mils High Gain: 11.5 dB, Nom Medium Power: +25 dBm, Typ P1dB @14 GHz
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CMM0014-BD
02-Aug-06
30mil
CMM-0014-BD
CMM0014-BD
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c 3421 transistor
Abstract: GSRU20040 2n6924 gsru200 2N2891
Text: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .
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MIL-STD-750,
MIL-STD-883C,
c 3421 transistor
GSRU20040
2n6924
gsru200
2N2891
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BT22
Abstract: No abstract text available
Text: RECOMMENDATIONS FOR MOUNTING AND BNDING GaAs MMIC CHIPS Die or Chip Mounting It is important that GaAs chips are mounted correctly to avoid significant increase in thermal impedance and to avoid consequent damage during wiring bonding. This is particularly important for large area chips such as MMIC’s
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Ablestick36-2
BT22
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84-1 CONDUCTIVE EPOXY
Abstract: copper bond wire
Text: RECOMMENDATIONS FOR MOUNTING AND BONDING GaAs MMIC CHIPS Die or Chip Mounting It is important that GaAs chips are mounted correctly to avoid significant increase in thermal impedance and to avoid consequent damage during wire bonding. This is particularly important for large area chips such as MMIC's
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