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Text: EUT062S Transistors Bipolar Transistor Full Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)650 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.8.0 @I(C) (A) (Test Condition)15
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EUT062S
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Abstract: No abstract text available
Text: EUT062 Transistors Bipolar Transistor Full Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)650 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.8.0 @I(C) (A) (Test Condition)15
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Text: EUT062RS Transistors Bipolar Transistor Full Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)650 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.8.0 @I(C) (A) (Test Condition)15
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Text: EUT062R Transistors Bipolar Transistor Full Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)650 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.8.0 @I(C) (A) (Test Condition)15
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BT061S
Abstract: BDX50 GENTRON STH16018 MRF435 BDY77
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT ICBO Max ON) Min (Hz) (A) Max r (CE)sat Max (s) Max (Ohms) Tp.r Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 BT061 BT061R BT061RS BT061S
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BT061
BT061R
BT061RS
BT061S
BT062
BT062R
BT062RS
BT062S
BT069
BT069R
BDX50
GENTRON
STH16018
MRF435
BDY77
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