Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ESD Z10 Search Results

    ESD Z10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    ISL32478EIBZ-T Renesas Electronics Corporation Fault Protected, Extended Common Mode Range, RS-485/RS-422 Transceivers with 16.5kV ESD Visit Renesas Electronics Corporation

    ESD Z10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3.2 v zener diode

    Abstract: 10v ZENER DIODE 20 kV ZENER DIODE DIODE ZENER X
    Text: WT-Z106P-AU4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-AU4-14 2. Structure:


    Original     		PDF WT-Z106P-AU4-14 150mm) 20-Jul-07 3.2 v zener diode 10v ZENER DIODE 20 kV ZENER DIODE DIODE ZENER X

    zener diode

    Abstract: WT-Z108N
    Text: WT-Z108N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z108N 137um) zener diode WT-Z108N

    Untitled

    Abstract: No abstract text available
    Text: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z108P

    Untitled

    Abstract: No abstract text available
    Text: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z108N-4 137um)

    3.2 v zener diode

    Abstract: No abstract text available
    Text: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z108P-AU 3.2 v zener diode

    um 54 diode

    Abstract: zener diode chip 3.2 v zener diode
    Text: WT-Z108N-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-AU 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z108N-AU 137um) um 54 diode zener diode chip 3.2 v zener diode

    zener diode chip

    Abstract: WT-Z108P-AU4
    Text: WT-Z108P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU4 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z108P-AU4 zener diode chip WT-Z108P-AU4

    WT-Z108P

    Abstract: No abstract text available
    Text: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z108P-4 WT-Z108P

    3.2 v zener diode

    Abstract: 105um DIODE ZENER X
    Text: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z106P-4-12 150mm) 05-Dec-06 3.2 v zener diode 105um DIODE ZENER X

    z106

    Abstract: DIODE ZENER X
    Text: WT-Z106P-4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-14 2. Structure: 2-1 Planar type: Silicon Diode


    Original     		PDF WT-Z106P-4-14 150mm) 25-Jan-07 z106 DIODE ZENER X

    3.2 v zener diode

    Abstract: diode zener protection ZENER 5V diode Zener LED zener diode WT-Z105P-AU4 DIODE ZENER X
    Text: WT-Z105P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4 2. Structure: 2-1 Planar type: P/N Diode


    Original     		PDF WT-Z105P-AU4 MIL-STD883 3.2 v zener diode diode zener protection ZENER 5V diode Zener LED zener diode WT-Z105P-AU4 DIODE ZENER X

    std883

    Abstract: Zener diode DIODE ZENER X
    Text: WT-Z106N-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4 2. Structure: 2-1 Planar type: N/P Diode


    Original     		PDF WT-Z106N-AU4 MIL-STD883 24-Nov-05 std883 Zener diode DIODE ZENER X

    YPBL-Z103T

    Abstract: No abstract text available
    Text: POWER Module 1 YPBL-Z103T Module Spec • PICTURE ■ FEATURES Built-in Standalone battery capacity monitoring and reporting Single-line communication support Over-charge/discharge voltage and current protection Short-circuit protection ESD Protected : IEC 61000-4-2 Level 4


    Original     		PDF YPBL-Z103T

    YPBL-Z101A

    Abstract: No abstract text available
    Text: POWER Module 1 YPBL-Z101A Module Spec • PICTURE ■ FEATURES Built-in High-Accuracy detector Over-charge/discharge voltage and current protection Short-circuit protection Low on-state internal resistance : TPY. 50 mΩ 3 V, 1 A ESD Protected : IEC 61000-4-2(Level 4)


    Original     		PDF YPBL-Z101A

    SNN01Z10

    Abstract: No abstract text available
    Text: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V


    Original     		PDF NN01Z OT-223 SNN01Z SNN01Z10 SNN01 1Z10Q 24-NOV-11 KSD-T5A011-000

    zener 5A6 ON

    Abstract: zener 5A6 5a6 dual zener diode 5A6 zener zener 9A1 5a6 zener diode 5A6 marking code Z10V marking code 5A6 sot 26 6A8 SOT-23
    Text: MMBZ5V6A Series Dual Common Anode Zener TVS Features: *Allows Either Two Separate Unidirectional Configuations or a Single Bidirectional Configuations. *Low Leakage Current. *24-40 Watts Peak Power Protection. *Excellent Clamping Capability. *ESD Rating of Class N exceeding 16KV per the Human Body Model.


    Original     		PDF OT-23 008grams OT-23 zener 5A6 ON zener 5A6 5a6 dual zener diode 5A6 zener zener 9A1 5a6 zener diode 5A6 marking code Z10V marking code 5A6 sot 26 6A8 SOT-23

    J-STD-020B

    Abstract: PD55003L
    Text: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION


    Original     		PDF PD55003L PD55003L J-STD-020B

    PD55003L

    Abstract: ST 0721 702 TRANSISTOR smd J-STD-020B PD55003L-E SMD electrolytic capacitor ferride bead
    Text: PD55003L-E RF POWER TRANSISTOR The LdmoST Plastic FAMILY General features • Excellent thermal stability ■ Common source configuration ■ POUT =3W mith 17dB gain@500MHz/12.5V ■ New leadless plastic package ■ Esd protection ■ Supplied in tape & reel of 3K units


    Original     		PDF PD55003L-E 500MHz/12 2002/95/EC PD55003L-E PD5500L-E PD55003L ST 0721 702 TRANSISTOR smd J-STD-020B SMD electrolytic capacitor ferride bead

    J-STD-020B

    Abstract: PD55003L
    Text: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION


    Original     		PDF PD55003L PD55003L J-STD-020B

    Zener diode DW

    Abstract: zener diode z10 TPIC2202 TPIC2322L SLIS032 tpic6a595 sd TPIC1321L TPIC2301 TPIC3322L 088-M
    Text: TPIC1321L 3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY SLIS042 – NOVEMBER 1994 • • • • • • Low rDS on . . . 0.35 Ω Typ Voltage Output . . . 60 V Input Protection Circuitry . . . 18 V Pulsed Current . . . 4 A Per Channel Extended ESD Capability . . . 4000 V


    Original     		PDF TPIC1321L SLIS042 TPIC1321L Zener diode DW zener diode z10 TPIC2202 TPIC2322L SLIS032 tpic6a595 sd TPIC2301 TPIC3322L 088-M

    10 35L

    Abstract: picture in picture chip YPBL-Z103A
    Text: POWER Module 1 YPBL-Z103A Module Spec • PICTURE ■ FEATURES Built-in High-Precision monitor with Alerts Data-acquisition, information-storage, and safety monitoring Remaining capacity estimation Single-line communication support Over-charge/discharge voltage and current protection


    Original     		PDF YPBL-Z103A 10 35L picture in picture chip

    XZ1002-BD-000V

    Abstract: xz1002-bd mmic core chip Z1002-BD XZ100 1521e Mimix Broadband m11
    Text: 8.5-11.0 GHz GaAs MMIC Core Chip Z1002-BD March 2009 - Rev 11-Mar-09 Features General Description The XZ1002-BD is a highly integrated dual path transmit/receive 3 port core chip. It is designed for applications operating within the 8.5 to 11.0 GHz range. The core consists of integrated transmit/receive


    Original     		PDF 11-Mar-09 Z1002-BD XZ1002-BD MIL-STD-883 XZ1002-BD-000V XZ1002-BD-000V xz1002-bd mmic core chip XZ100 1521e Mimix Broadband m11

    600w class d circuit diagram schematics

    Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
    Text: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL


    Original     		PDF SGPROTECT/1001 600w class d circuit diagram schematics TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3

    Untitled

    Abstract: No abstract text available
    Text: STEWART CONNECTOR SYSTEMS INC. , R R 2, BOX 2020 GIEN BOCK, PENNSYLVANIA 17327 "NOT PRESENTLY TOOLED’ PART NO.: SS-668804S-A-N F-1-AB EMI-RFI ONE PIECE SHIELDED, ESD GROUNDED 4 PORT PCB HARMONICA JACK PAC " - N r NON-FLANGE ’ - r SIDE SOLDER TAILS ARE ON .180 [4.57] CENTERS


    OCR Scan     		PDF SS-668804S-A-N p-25J CT660020X3