ERC80M Search Results

Contextual Info: ERC80M -006 5 a SC H O T T K Y B A R R IER DIO DE I Features titz7 ; u t - >\,K 94 7° • 1&lJtt It Insulated package by fully m o ld ing. • teVF Low V p Connection Diagram Sup er high speed sw itching. H igh reliability by planer d esign . ! Applications

Contextual Info: ERC80M-004 5A SCHOTTKY BARRIER DIODE : Features In sulated p a cka g e by fu lly m o ld in g . • te V r L o w V f- • x -f C o n n e c tio n D ia g ra m S u p e r h ig h speed s w itc h in g . • y \y-±-stmt- jr&ftftiitt H igh re lia b ility by p la n e r d e s ig n .

schottky diode 60V 5A

Abstract: 5A60V ERC80M-006
Contextual Info: ERC80M-006 5A (60V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5MAX. 4.5MAX. Ø3.2+0.2 -0.1 2.0 17.0±0.3 4.7 6.0 3 1.2 0.8 Features 5.08 Insulated package by fully molding Low VF EIAJ High reliability by planer design SC-67 Connection diagram

ERC80M-006

Abstract: a369
Contextual Info: ERC80M -006 5 a SC H O T T K Y B A R R IER DIO DE I Features titz7 ; u t - >\,K 94 7° • 1&lJtt It Insulated package by fully m o ld ing. • teVF Low V p Connection Diagram Sup er high speed sw itching. H igh reliability by planer d esign . ! Applications

40 v 20 amp, diode

Abstract: 10131 ERA83-006 ERB83-006 ERC80M-006 ERC81 ERC81-006 MARK diode general semiconductor 2 amp 20 - 60v diode ERB83
Contextual Info: COLLHER SEMICONDUCTOR INC 4ÔE ]> • 25307^ ICOL □□□1723 TDÔ <s 60V S chottkys 1 Amp, 2 Amp, 3 Amp, 4 Amp S chottky Barrier Rectifiers General Description: The ERA83, ERB83, ERC81 and ERC80M Series of Schottky Barrier Rectifiers provides exceptional performance in econo­

UJ45

Abstract: ERC80M-004 T460 017t
Contextual Info: ERC80M -004 5 a y 3 7 h t - ^ i J T f 'i't - Y m ftW t > £ : O u tlin e D ra w in g s SCHOTTKY BARRIER DIODE : F e a tu re s In su la te d p a cka g e by fu lly m o ld in g . • fl&Vr L o w Vp m m m & M C onnection Diagram S u p e r h ig h speed s w itc h in g .

Contextual Info: SCHOTTKY BARRIER DIODES 20 - 90Vo Its 20 - 30V O LT S Part Number •o A PAC KAG E SURFACE MOUNT M S flfttfe ERA82-004 *1 ERA83-004 *1 ERA81-004 *2 ERB83-004 *2 ERC81-004 *4 ERC81S-004 *4 ERC80-004 ERC62-004 ERC80M-004 ERC62M-004 AXIAL TO*220 TO-220F ,TQs22 F<5 ,

ERC80M-004

Abstract: 8f diode
Contextual Info: ERC80M-004 5 a S C H O T T K Y BARRIER DIODE : Features • S i* ''* £ * * £ Insulated package by fu lly m o ld in g . • te V F Low V F C onnection D iagram S uper hig h speed s w itc h in g . H ig h re lia b ility b y p la n e r d e s ig n . : A pplications

ERC80M-006

Contextual Info: ERC80M-006 5A _ H Outline Drawing scH O TTK Y b a r r i e r d io d e 4 .5 2.0 -°-4 J i. g - 7 • Connection Diagram ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching \4 — • High reliability by planer design

SF 369

Abstract: ERC80M-006 H125
Contextual Info: ERC80M -006 5 a : O utline D ra w in g s SCHOTTKY BARRIER DIODE : Features • 1&lJt t if a* fa & z tit-.y ^ K 7' In su la te d p a ckag e by fu lly m o ld in g . • te V F Low V p C o n n e c tio n D ia g ra m S u p e r h ig h speed s w itc h in g .

c80m

Abstract: ERC80M-006
Contextual Info: ERC80M -006 5 a ^ a' yh+— K : Outline Drawings SCHOTTKY BARRIER DIODE : Features • St11Jf t » ffi A4*fc# i ¡* t l tz 7 Jl-* —J uk ? -f 7‘ In s u la te d p a c k a g e b y fu lly m o ld in g . • fc V F m & u& m C o n n e c tio n D ia g ra m L o w Vp

ERC80M-004

Contextual Info: ERC80M-004 5A H scHOTTKY b a r r i e r d io d e Outline Drawing • Connection Diagram ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

ERC80M-006

Contextual Info: ERC80M -006 5 a SCHOTTKY BARRIER DIODE I Features titz7 ; u t - >\,K9 4 7° • 1&lJtt It Insulated package by fully m o ld in g . • te V F Low V p Connection Diagram S up e r h ig h speed s w itc h in g . H ig h reliability by planer d e sig n . ! Applications

Schottky Diode 40V 5A

Abstract: ERC80M-004
Contextual Info: ERC80M-004 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 10.5MAX. 4.5MAX. Ø3.2+0.2 -0.1 2.0 17.0±0.3 4.7 6.0 3 1.2 0.8 Features 5.08 Insulated package by fully molding Low VF EIAJ High reliability by planer design SC-67 Connection diagram

SE024

Abstract: ERB12 ESAD81-004 se014 ERA1506 ERB30 ESAB82M-006 esac6 ERD03-04 SE036
Contextual Info: COLLMER SEMICONDUCTOR INC MÖE D me, dddisôi Schottky/General Purpose Diodes " P ICOL <S o \ ~ \ J > Schottky “Quick Reference” Selection Guide PACKAGE SURFACE MOUNT S I N G L E AXIAL TO-220 TO-3P F-PACK Full Mold Package PACKAGE SURFACE MOUNT D U A

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

c80m

Abstract: ERC80M-004
Contextual Info: E R C80 M - 0 0 4 5A ì± ^ « * ^ ì-k ' > 3 ' y b j r —' V J T f * - i K : Outline D raw ings 4-5 MAX. SCHOTTKY BARRIER DIODE 2.0 : Features JEDEC EIAJ Insulate d p a cka g e by fu lly m o ld in g . SC-67 • fcV r L ow Vp C onnection Diagram S u per h ig h speed s w itc h in g .

Contextual Info: Ratings and characteristics M a x im u m rating Type V rrm lo *1 If SM # 2 V o lts A m p s. A m p s. T h e rm a l ratin g C h a ra c te ris tic s T a = 2 5 °C T j a n d Tstg V fm Ir r m M ass D im e n s io n s Fig. No. #3 °C M ax. V o lts M ax. m A G ra m s

Contextual Info: E R C80 M- 0 0 4 5A ì± ^ « * ^ ì-k ' > 3 ' y b j r —' V J T f * - i K : O u tlin e D ra w in g s 4-5 MAX. SCHOTTKY BARRIER DIODE 2.0 : Features JEDEC EIAJ Insulated pa c ka g e by fully m o ld in g . SC-67 • fcV r L ow Vp C o n n e c tio n D ia g ra m

ERC24-06

Abstract: ERA21-06 ERA18 era-84 ERA15-04 ESAD75-02 ERC24-04
Contextual Info: V -V F U J I M IN I AXIAI. DIODI? S E R IE S T PLAN General purpose D iode T Y P lì -~ FRD FRD SOD Low loss FRD FRD FRD ZENER n FRA15-01 ERA15-02 ERA15-04 MM 15-06 ERA15-08 ERA15-10 BRA-18-02 ERA48-04 100 V 200 200 400 EIÏA22-02 ERA22-04 ERA22-0G ERA22-08

Contextual Info: Schottky-Barrier Diodes Single package Ratings and characteristics V rrm lo Volts Amps. Dim ensions Max. m A G ram s Fig. No. Characteristics Ta=25°C T j and Tstg V fm Irrm # 3 Amps. °C M ax. Volts 0 .6 Ta=60°C) 25 -40 t o +125 0.55 (I f= 0.6A ) 1.0 0.18

ET412

Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Contextual Info: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646

ESAD81

Abstract: ESAC6 erb12 ESAD81-004 era-84 SCHOTTKY -004
Contextual Info: SCHOTTKY & GENERAL PURPOSE DIODES Schottky “Quick Reference” Selection Guide PACKAGE 45 VOLT Part Number lo A Pkg. M OUNT SC802-04 1 20 AXIAL ERA82-004 ERA83-004 E R A 8 1-004 ERB81 -004 ERB83-004 ERC81 -004 ERC81S-004 0.6 1 1 2 2 3 5 TO -220 ERC80-004

ERG81-004

Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Contextual Info: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *