WS128J
Abstract: S29WS064J S29WS-J S29WS128J S29WS128J-MCP
Text: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Distinctive Characteristics Architectural Advantages Hardware Features Single 1.8 volt read, program and erase (1.65 to 1.95 volt)
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S29WS128J/064J
16-Bit)
WS128J:
16Mb/48Mb/48Mb/
WS064J:
8Mb/24Mb/24Mb/8Mb
S29WS-J
WS128J
S29WS064J
S29WS128J
S29WS128J-MCP
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AM29BDS064H
Abstract: AM29BDS128H SA10 SA11 SA14 SA15 SA18
Text: AM29BDS128H/AM29BDS064H 128 or 64 Megabit 8 M or 4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY INFORMATION Distinctive Characteristics Architectural Advantages Hardware Features Single 1.8 volt read, program and erase (1.65 to
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AM29BDS128H/AM29BDS064H
16-Bit)
AM29BDS128H/064H
AM29BDS064H
AM29BDS128H
SA10
SA11
SA14
SA15
SA18
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SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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M29EWL
Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
144KB
256Mb
M29EWL
JS28F00AM29EWH
28F256M29EW
JS28F00AM29EW
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JS28F00am29
Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers
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M29EW
256-Mbit,
512-Mbit,
x8/x16,
100ns
512-word
14MB/s)
Kbytes/64
JS28F00am29
JS28F00AM29EW
JS28F512M29
js28f256m29
pc28f00am29ew
pc28f00am29
JS28F512
PC28F00B
PC28F512M
JS28f256
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00A1
Abstract: JC42 MBM29F S29CD016G
Text: S29CD016G 16 Megabit 512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory Data Sheet ADVANCE INFORMATION Distinctive Characteristics Architecture Advantages Simultaneous Read/Write operations — Data can be read from one bank while executing
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S29CD016G
32-Bit)
S29CD016
00A1
JC42
MBM29F
S29CD016G
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PQR080
Abstract: JC42 S29CD016G Am29BDD160GB64C
Text: Am29BDD160G Data Sheet For new designs, S29CD016G supersedes Am29BDD160G and is the factory-recommended migration path for this device. Please refer to the S29CD016G datasheet for specifications and ordering information. The following document contains information on Spansion memory products. Although the doc-ument
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Am29BDD160G
S29CD016G
PQR080
JC42
Am29BDD160GB64C
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pc28f00ap30
Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode
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P30-65nm
512-Mbit,
100ns
105ns
16-word
52MHz
110ns
512-word
46MByte/s
pc28f00ap30
JS28F512P30
PC28F512P30
PC28F00AP30TF
pc28f00ap
PC28F512P30BF
PC28F00BP30EF
pc28f00ap30ef
PC28F00AP30BF
JS28F512P30BF
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S29PL064J
Abstract: No abstract text available
Text: Am29PDL640G Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL064J supersedes Am29PDL640G and is the factory-recommended migration path. Please refer to the S29PL064J datasheet for specifications and ordering information. Availability of this document
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Am29PDL640G
S29PL064J
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Untitled
Abstract: No abstract text available
Text: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.6, OCT. 30, 2013 1 MX29GL512F Contents FEATURES. 5
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MX29GL512F
PM1617
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AM29DL640H
Abstract: PDL127 PDL127H PDL129 PDL129H sa2111
Text: Am75PDL191CHH/ Am75PDL193CHH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am75PDL191CHH/
Am75PDL193CHH
FMB073--73-Ball
AM29DL640H
PDL127
PDL127H
PDL129
PDL129H
sa2111
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S29CL016J
Abstract: S29CL-J S29CD016J S29CD032J S29CD-J S29CL032J marking code CLJ
Text: S29CD-J & S29CL-J Flash Family S29CD032J, S29CD016J, S29CL032J, S29CL016J 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O S29CD-J & S29CL-J Flash Family Cover Sheet Data Sheet Preliminary
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S29CD-J
S29CL-J
S29CD032J,
S29CD016J,
S29CL032J,
S29CL016J
S29CD-J
S29CL016J
S29CD016J
S29CD032J
S29CL032J
marking code CLJ
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am29f date code markings
Abstract: BDD160 MARKING CODE SG12 JC42 PQR080 AM29BDD160GB-54DKI Am29BDD160GB64C PQR080-80-Lead
Text: Am29BDD160G Data Sheet -XO\ 7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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Am29BDD160G
am29f date code markings
BDD160
MARKING CODE SG12
JC42
PQR080
AM29BDD160GB-54DKI
Am29BDD160GB64C
PQR080-80-Lead
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FUA093
Abstract: PDL127 PDL127H PDL129 PDL129H sa2111
Text: Am70PDL127CDH/ Am70PDL129CDH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am70PDL127CDH/
Am70PDL129CDH
Am70PDL127CDH/Am70PDL129CDH
FUA093
PDL127
PDL127H
PDL129
PDL129H
sa2111
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LAA080-80-ball
Abstract: JC42 MBM29F PRQ080 S29CD016G S29CD032G S29CD-G fujitsu SL grade LAA080
Text: S29CD-G Flash Family S29CD032G, S29CD016G 32 Megabit 1M x 32-Bit , 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O featuring 170 nm Process Technology Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications
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S29CD-G
S29CD032G,
S29CD016G
32-Bit)
LAA080-80-ball
JC42
MBM29F
PRQ080
S29CD016G
S29CD032G
fujitsu SL grade
LAA080
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S29GL128P10
Abstract: s29gl01gp13ffiv10 S29GL01GP12 S29GL01GP13 S29GL128P S29GL01GP S29GL01GP12FFI010 S29GL01GP13TFIV10 S29GL01GP12TF S29GL01GP12TFI010
Text: S29GL-P MirrorBitTM Flash Family S29GL01GP, S29GL512P, S29GL256P, S29GL128P 1 Gigabit, 512 Megabit , 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology S29GL-P MirrorBitTM Flash Family Cover Sheet
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S29GL-P
S29GL01GP,
S29GL512P,
S29GL256P,
S29GL128P
S29GL128P10
s29gl01gp13ffiv10
S29GL01GP12
S29GL01GP13
S29GL128P
S29GL01GP
S29GL01GP12FFI010
S29GL01GP13TFIV10
S29GL01GP12TF
S29GL01GP12TFI010
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1A4000
Abstract: No abstract text available
Text: Am29PDL128G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29PDL128G
Am29PDL127H
1A4000
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s29gl128p
Abstract: S29GL512P vhdl S29GL256P S29GL128P date code marking S29GL512P S29GL01GP S29GL128P circuit S29GLXXXP S29GL128P10 spansion S29GL128P
Text: S29GL-P MirrorBitTM Flash Family S29GL01GP, S29GL512P, S29GL256P, S29GL128P 1 Gigabit, 512 Megabit , 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm Mirrorbit process technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
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S29GL-P
S29GL01GP,
S29GL512P,
S29GL256P,
S29GL128P
S29GLxxxP
s29gl128p
S29GL512P vhdl
S29GL256P
S29GL128P date code marking
S29GL512P
S29GL01GP
S29GL128P circuit
S29GL128P10
spansion S29GL128P
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PL129N
Abstract: S29PL256N pl127 29PL256N S29PL127N S29PL-N Spansion NAND Flash DIE
Text: S29PL-N MirrorBit Flash Family 29PL256N, S29PL127N, S29PL129N, 256/128/128 Mb 16/8/8 M x 16-Bit CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory Data Sheet PRELIMINARY Notice to Readers: This document indicates states the current technical
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S29PL-N
29PL256N,
S29PL127N,
S29PL129N,
16-Bit)
PL129N
S29PL256N
pl127
29PL256N
S29PL127N
Spansion NAND Flash DIE
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SPANSION gl512p FLASH
Abstract: GL256P GL512P S29GL256P11 f8A24 Spansion Flash GL128P S29GL-R S29GL256P
Text: S29GL-P MirrorBit Flash Family S29GL01GP, S29GL512P, S29GL256P, S29GL128P 1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology S29GL-P MirrorBit® Flash Family Cover Sheet Data Sheet
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S29GL-P
S29GL01GP,
S29GL512P,
S29GL256P,
S29GL128P
SPANSION gl512p FLASH
GL256P
GL512P
S29GL256P11
f8A24
Spansion Flash
GL128P
S29GL-R
S29GL256P
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CSTCE8M00G15C
Abstract: TMP92FD54AIFG
Text: TOSHIBA Original CMOS 32-Bit Microcontroller TLCS-900/H1 Series TMP92FD54AIFG Tentative Semiconductor Company Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section, “Points of Note and Restrictions”.
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32-Bit
TLCS-900/H1
TMP92FD54AIFG
TMP92FD54AI
TMP92FD54AIFG
TMP92FD54AI
CSTCE8M00G15C
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TRANSISTOR BFW 11 pin diagram
Abstract: 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
S29WS256/128/064N
TRANSISTOR BFW 11 pin diagram
064N
S29WS064N
S29WS128N
S29WS256N
WS128N
pin diagram of TRANSISTOR BFW 11
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Untitled
Abstract: No abstract text available
Text: IS23SC1604 16-KBIT SECURED SERIAL EEPROM ADVANCE INFORMATION JANUARY 1999 FEATURES DESCRIPTION • 16K serial EEPROM with security features IS23SC1604 is a low-cost, low-power, highly secured 16K bits 2K x 8 serial EEPROM. It is fabricated using ISSI’s
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IS23SC1604
16-KBIT
IS23SC1604
IS23SC1604-P
300-mil
IS23SC1604-X2I
IS23SC1604-X3I
IS23SC1604-X4I
IS23SC1604-X5I
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