Untitled
Abstract: No abstract text available
Text: 3 Am p E ncapsulated Assem blies ER Series Dimensions Inches A U C D t Millimeters 1.31 0.44 1.06 0.47 Notes 33.3 11.1 26.9 11.9 Note 1: l/ 4 " - 2 0 Mounting Stud Microsemi Catalog Number ER*1B1 ER*2B1 ER*3B1 ER*4B1 ER.5B1 ER.6B1 ER*7B1 ER»8B1 ER»9B1 ER*10B1
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diode 10b1
Abstract: ER 900 4b1 diode diode 6b1 6B1 DIODE
Text: 3 Amp Encapsulated Assemblies ER Series D im e nsio ns Inches A B C t Microsemi Catalog Number 1.31 0.44 1.06 0.47 Millimeters 33.3 11.1 26.9 11.9 - Notes 1 Max. PRV Rating Per Circuit Arm ER»1B1 ER*2B1 ER*3B1 ER*4B1 ER*5B1 ER*6B1 ER.7B1 ER.8B1 ER*9B1
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Untitled
Abstract: No abstract text available
Text: Corcom is a recognized ISO 9001 registered firm. ISO 9001 A3256 A4003 POW ER ENTRY PRODUCTS A complete line of power entry modules solves a variety of pow er' entry needs by combining functions to reduce cost, space and labor. RFI POW ER LINE FILTERS FILTERED
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A3256
A4003
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LM391 equivalent
Abstract: lm391 IC LM391 JE182 JE722 OF LM391 550JA
Text: LM391 & National Semiconductor LM391 Audio Power Driver General Description Features The LM391 audio pow er driver is designed to drive external pow er tra n sisto rs in 10 to 100 w att pow er am plifier designs. High pow er supply voltage operation and true high fidelity
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LM391
LM391
0W-411
LM391 equivalent
IC LM391
JE182
JE722
OF LM391
550JA
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p811t
Abstract: No abstract text available
Text: MP ISO 9001 Registered P ow er , , M anagem ent |LlP Supervisor with Battery Backup Switch The IMP690A/IMP692A/IMP802L/ IMP802M/IMP805L simplify pow er supply m onitoring and control in microprocessor systems. Each circuit implements four functions: Reset control, w atchdog monitoring, batterybackup sw itching and pow er-failure m onitoring. In addition to
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IMP690A/IMP692A/IMP802L/
IMP802M/IMP805L
ELD/BJ04
408-432-9100/w
p811t
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Untitled
Abstract: No abstract text available
Text: Proud to be ISO 9001:2008 Certified 41I nt er s t at eLane Wat er bur y ,CT06705USA P:203. 755. 5629 F:203. 755. 0659 Emai l :s al es @f i l mc apac i t or s . c om www. f i l mcapaci t or s. com Ser i esHV1313TC Met al l i z edPol yest er Feat ur es:Fl amer
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08Criid
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a417b
Abstract: No abstract text available
Text: CY7B1094 CY7B1095 CY7B1096 . ä PRELIMINARY s O s r# " ‘Y P P F . Ç . ^ — SEMICONDUCTOR Features • H igh speed — tAA = 6 ns • B iC M O S fo r o p tim u m speed/pow er • Low active pow er — 900 mW • Low stan d b y pow er — 350 mW • A utom atic power-down w hen
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CY7B1094
CY7B1095
CY7B1096
CY7B1096
a417b
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2N5915
Abstract: 2N5914 VK20009-3B VK200093B ta7409 rca 632 rca power transistor 14-150 pf 424 VK200-093B C3097
Text: File No. 424 rotBÆ Solid State RF Pow er Transisto rs Division 2N5914 2N5915 H ig h -P o w er Silicon N -P -N O verlay Transistors 12.E>-Volt, High-Pow er T yp es F o r Class-C A m p lifie rs in
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N5914
2N5915
2N5915
470MHz
2N5914
2N5914
ss3763r3
VK20009-3B
VK200093B
ta7409
rca 632
rca power transistor
14-150 pf 424
VK200-093B
C3097
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Untitled
Abstract: No abstract text available
Text: Corcom is a recognized ISO 9001 registered firm. ISO 9001 A3256 A4003 POW ER ENTRY PRODUCTS RFI POW ER LINE FILTERS FILTERED MODULAR JACKS Corcom’s Signal Sentry filtered modular jacks com bing different levels of filtering with RJ45 and RJ11 jacks to solve,
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A3256
A4003
820pF
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Untitled
Abstract: No abstract text available
Text: SOT143 4-PIN SMT Package • • • • ISO-9001 Registered Several standard schematics Small, industry standard package Ratio tolerances to ±0.05% Custom circuits available Specifications Value Package Pow er Dissipat ion 0.25 Watt s @ 70°C Elem ent Pow er Dissipat ion
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OT143
ISO-9001
25ppm/
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amperex transmitting
Abstract: 300 watts amplifier Amperex Scans-0017356
Text: AMPEREX TRANSMITTING T UBE 203-H FULLY INTERCHANGEABLE WITH HF-125 R.F. Pow er Am plifier, Oscillator, A.F. Pow er Am plifier, M odulator ^ IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIM ^ MAXIMUM RATINGS AND TYPICAL
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203-H
HF-125
203-H
amperex transmitting
300 watts amplifier
Amperex
Scans-0017356
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY JS9P12A-AS Apr. 1999 1. RF PERFORMANCE SPECIFICATIONS Ta= 25«C 1 CHARACTERISTICS O utp ut Pow er at ldB Com pression Point Pow er G ain a t ldB Com pression Point D rain C u rren t Pow er A dded Efficiency SYMBOL CONDITION MIN. TYP. MAX. U N IT
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JS9P12A-AS
-360iaA
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aaBO
Abstract: No abstract text available
Text: TOSHIBA 2SB1457 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON 2 S B 1 457 Unit in mm MICRO MOTOR DRIVE, H AM M ER DRIVE APPLICATIONS. 5.1 MAX PO W ER SWITCHING APPLICATIONS. PO W ER AM PLIFIER APPLICATION. High DC Current Gain : hpE = 200 (Min.) (V(jE = —2V, Iç; = —1A)
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2SB1457
75MAX
aaBO
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Untitled
Abstract: No abstract text available
Text: APT10M07JVR A d van ced P o w er Te c h n o l o g y 100V 225A 0.007Q POWER MOS V‘ Pow er M OS V® is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®
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APT10M07JVR
OT-227
E145592
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ScansU9X26
Abstract: amperex transmitting
Text: AMPEREX TRANSMITTING FORCED-AIR 220-R TUBE COOLED R.F. Pow er Am plifier, Oscillator, A.F. Pow er Am plifier, or M odulator |‘ MAXIMUM RATINGS AND TYPICAL OPERATING CONDITIONS
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220-R
220-R
ScansU9X26
amperex transmitting
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"amf st8 dslam ic2"
Abstract: No abstract text available
Text: MEDIUM POWER AMPLIFIERS CONTJ/POW ER AMPLIFERS r OPERATING GAIN NOISE OUTPUT VSW R MODEL FREQUENCY G A IN FLATNESS FIGURE POW ER IN/OUT NUMBER (G Hz (d B, Min.) (±dB. Max.) ( d B . Max.) ( d B m . Min.) (Max.) 1 DC POW ER m +15 v (m A. N o m .) OUTLINE
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AMF-2D-001080-70-23P
AMF-3D-001080-40-23P
AMF-4D-001080-50-23P
AMF-1B-020040-55-30P
AMF-28-020040-40-30P
AMF-3B-020040-20-30P
AMF-4B-020040-20-33P
AMF-5B-020040-15-33P
"amf st8 dslam ic2"
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lm 383 ic
Abstract: No abstract text available
Text: 2SB1457 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER Unit in mm M ICRO M OTOR DRIVE, HAM M ER DRIVE APPLICATION S. POW ER SW ITCHIN G A PPLICATIO N S. POW ER AM PLIFIER APPLICATIO N . • • High DC C urrent Gain : hpE = 200 (M in.)(V cE= -2 V , Ic = - 1 A )
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2SB1457
--30V
I00//8Ì
lm 383 ic
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epm7032v
Abstract: No abstract text available
Text: Features. □ □ Preliminary Information □ □ □ □ □ 3.3-V version of the popular EPM7032 EPLD Combinatorial speeds with tPD = 12 ns Clock frequencies up to 90.9 M Hz Innovative pow er-saving features 30% to 50% pow er savings over 5-V operation Power-down m ode controlled by a pow er-down pin to allow
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EPM7032
032V-12,
032V-15,
032V-20
ALTED001
epm7032v
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SC2235 NPN SILICON TRANSISTOR AU DI O POWER AM PLI FI ER APPLI CAT I ON S DRI V ER ST AGE AM PLI FI ER APPLI CAT I ON S ̈ FEAT U RES * Complimentary to UTC 2SA965 Lead-free: 2SC2235L Halogen-free: 2SC2235G ̈ ORDERI N G I N FORM AT I ON
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2SC2235
2SA965
2SC2235L
2SC2235G
2SC2235-x-T9N-B
2SC2235L-x-T9N-B
2SC2235G-x-T9N-B
2SC2235-x-T9N-K
2SC2235L-x-T9N-K
2SC2235G-x-T9N-K
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1000 WATTS AMPLIFIER
Abstract: 80 watts power amplifier amperex 212 amperex transmitting Amperex Scans-0017355 100 watts power amplifier
Text: AMPEREX TRANSMITTING TUBE 203-A R.F. Pow er Am plifier, O scillator, A.F. Pow er Am plifier, M odulator ^ iiiiiiiim iiiiiiiiiiiiiiiiiiiim iiiiim MAXIMUM RATINGS AND TYPICAL I OPERATING CONDITIONS GENERAL CHARACTERISTICS
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Untitled
Abstract: No abstract text available
Text: plerowTM APM0950-P29 High OIP3 Medium Power Amplifier Module Features Description • S21 = 32.0 dB @ 900 MHz = 30.0 dB @ 1000 MHz · NF of 6.6 dB over Frequency · Unconditionally Stable · High OIP3 @ Low Current C o u pl er C o u pl er · Single 5V Supply
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APM0950-P29
40x40mm
10x10mm)
APM0950
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Untitled
Abstract: No abstract text available
Text: What wL'tiM HEW LETT PACKARD Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC M edium Pow er Am plifier • 150-960 MHz O perating Range • +22 dBm Typ. Phk , +23 dBm Typ. P sat @ 900 MHz • 50 dB Typ. Pow er Control
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HPMX-3002
5962-8452E
D11474
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FEE430
Abstract: FEE 160 FEE532 FEE160-2 25CC PF500 UL-94-V0 FEE425 FEE509 fee 222-3-2
Text: PT EuC H lN IsT ReO L *C O MEP A EN Y A FEE 100 - 900 Series Low Cost Pow er Inductors , Inductances de puissance série économique K ey Features Caractéristiques Application schematics for Low Cost Pow er Inductors Schém as d'application pour inductance de puissance
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PF500
FEE430
FEE 160
FEE532
FEE160-2
25CC
UL-94-V0
FEE425
FEE509
fee 222-3-2
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d 2822-M
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC0913 900 MHz GaAs Integrated Power Amplifier T h is integrated circuit is intended for G S M c la s s IV handsets. T he d evice is specified for 2.8 watts output pow er and 48% minimum pow er added efficiency
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RFIC0913
MC33169
MRFIC0913
d 2822-M
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