EQUIVALENT TRANSISTOR C 243 Search Results

RS468

Abstract: transistor dg sot-23 BENT LEAD transistor TO-92 Outline Dimensions P005 n7 transistor P012 B W4 Transistor GP007 transistor W4 sot-23
Contextual Info: Package Options TO-39 N2, B TO-52 (N9) TO-92 (N3, L, LL) DIP Plastic (N4, N6, NA, J, P) DIP Ceramic (NC, N7, P, C) Side Braze (NC, N7) TO-220 (N5) 7-Pin TO-220 (K2) TO-243 AA (SOT-89) (N8) SOT-23 (K1) TO-3 (N1) Die in Wafer Form (NW, XW) Die on adhesive

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

equivalent transistor rf "30 mhz"

Abstract: MRF392 NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor D esigned prim arily for w ideband la rg e-sig nal output and driver am plifier stages in the 30 to 500 M H z frequency range. • Specified 28 Volt, 400 MHz Characteristics —

laser diode spice modeling

Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
Contextual Info: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these

vhf linear amplifier mrf245

Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245
Contextual Info: Order this document by AN791/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN791 A SIMPLIFIED APPROACH TO VHF POWER AMPLIFIER DESIGN Prepared by: Helge O. Granberg RF Circuits Engineering This note discusses the design of 35-W and 75-W VHF linear amplifiers. The construction technique

ED26 diode

Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

ED26 diode

Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the

MOS Controlled Thyristor

Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

applications of mos controlled thyristor

Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
Contextual Info: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to

SCHEMATIC WITH IGBTS

Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
Contextual Info: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high

equivalent transistor c 243

Abstract: VDD400 "RF MOSFET" 400v 10 amp n-channel mosfet equivalent transistor an 243 f10 transistor 10F10 LF4030C equivalent transistor rf "30 mhz" D8s mosfet
Contextual Info: A jfc C D V i m an A M P com pany RF MOSFET Power Transistor, 30W, 40V 500 -1000 MHz LF4030C V2.00 Features • • • • • • N-Channel Enhancement Mode Device Gold Metallized Resfet Structure Lower Capacitances for Broadband Operation Common Source Configuration

AN8603

Abstract: MOS-Gated Thyristor
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN8603.2 Abstract Conventional vertical power MOSFETs are limited at high voltages >500V by the appreciable resistance of their epitaxial drain region. In a new MOS-gate controlled device

Contextual Info: yWfcCCW m a n A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 - 1 7 5 MHz DU2840S Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power l.ower Noise Figure Than Bipolar Devices

AN-7505

Abstract: fairchild low power transistor 1977
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract Title N86 bt mpro d BTs h t itch eed d ghrt paty utho eyrds terrpoon, minctor, er ) OCI O frk Conventional vertical power MOSFETs are limited at high

UF2840G

Abstract: transistor C 245 b
Contextual Info: P i com pany RF MOSFET Power Transistor, 40W, 28V 100-500 MHZ UF2840G - A - B » Features f— H— j • N -Channel E n h an cem en t M ode D evice I I • DM OS Structure • Low er C ap acitan ces for B roadb an d O p eratio n

Contextual Info: Aflkm*A w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 100 - 500 MHz UF2805B V2.00 Features • N-Channel Enh ancem en t Mode Device • DMOS Structure • Lower Capacitances for Broadband O peration • C om m on Source Configuration • Lower Noise Floor

AN-7505

Abstract: AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices
Contextual Info: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract /Title AN75 5 Subect Impro ed GBTs ith ast witch ng peed nd ighurent apaility) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOCI

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

equivalent transistor c 243

Abstract: lf2805a 1000 MHz transistor 5W
Contextual Info: A fikQ m w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 500 -1000 MHz LF2805A V2.00 Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor

Contextual Info: m m an A M P com pany RF M O SFET Power Transistor, 10W, 28V 2 -175 MHz DU2810S Features • • • • • N-Channel E nhancem ent M ode Device DMOS Structure I.ower Capacitances for Broadband O peration C om m on Source Configuration Low N oise Floor Absolute Maximum Ratings at 25°C

triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes

15J 6KV

Abstract: speed control of induction motor by using scr "The Magic of I2t" SCR C106D equivalent circuit slip ring motor characteristics curve VARISTOR 275 LA 20A 5 hp DC motor speed control using scr transformer with 20kVA rating 20kVA transformer scr C106D
Contextual Info: APPLICATION NOTES Littelfuse Varistor Design Examples APPLICATIONS: 3000 1500 It is desired to prevent failure of the power supply shown in Figure 1b to be used on residential 117VAC lines. A representative transient generator is to be used for testing as shown in Figure 1a.

DU1230S

Abstract: arco TRIMMER capacitor SEMCO
Contextual Info: A te m m a n A M P com pany RF MOSFET Power Transistor, 30W, 12V 2 -175 MHz DU1230S V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration High Saturated O utput Power Lower Noise Figure Than Bipolar Devices