EQUIVALENT TRANSISTOR 2SK Search Results

2SA1955

Abstract: 2SK1830 HN7G01FU HIGH POWER MOSFET TOSHIBA 2SK1830 MOSFET
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

HN7G01FU

Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)

Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

2SA1955

Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
Contextual Info: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

Power MOSFET, toshiba

Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
Contextual Info: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent

2SK1830

Abstract: HN7G05FU RN2301
Contextual Info: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent

2SK1830

Abstract: HN7G05FU RN2301
Contextual Info: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent

2SK1830

Abstract: HN7G02FU RN2110
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

2SK1830

Abstract: HN7G02FU RN2110
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

HN7G02FU

Abstract: 2SK1830 RN2110 2SK183
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

2SK1830

Abstract: HN7G02FU RN2110
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

2SA1955

Abstract: 2SK1830 HN7G01FU
Contextual Info: HN7G01FU TOSHIBA TOSHIBA TENTATIVE MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 ± 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent

2SA1955

Abstract: 2SK1830 HN7G01FU Scans-005646 HN7G01 marking za mosfet MOSFET MARKING ZA
Contextual Info: TO SH IBA TENTATIVE HN7G01FU TOSHIBA MULTI CHIP DISCRETE DEVICE H N 7 G 0 1 FU Unit in mm POWER MANAGEMENT SWITCH APPLICATION 2.1 i 0.1 DRIVER CIRCUIT APPLICATION INTERFACE CIRCUIT APPLICATION Q1 Transistor : 2SA1955 Equivalent Q2 (MOS-FET) : 2SK1830 Equivalent

2SC2812

Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965
Contextual Info: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,

ei33

Abstract: 2SK1830 J-10
Contextual Info: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

2SK182

Abstract: LTF5
Contextual Info: 2SK1826 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 82 6 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : V'^ = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

IFN147

Contextual Info: E6 9-97 IFN147 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR Absolute maximum ratings at TA = 25°C • LOW NOISE AUDIO AMPLIFIER • Equivalent to Japanese 2SK147 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 10 mA

2SK1830

Contextual Info: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

Contextual Info: Ordering number : ENN7021 | TR : NPN Epitaxial Planar Silicon Transistor _FET : N-Channel Silicon Junction FET FC21 IS A /tY O l High-Frequency Amplifier, AM tuner RF Amplifier Applications Package Dimensions Features * The FC21 contains both a 2SK1740 equivalent chip

2SK1826

Contextual Info: TO SHIBA 2SK1826 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 826 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

K1825

Contextual Info: TOSHIBA 2SK1825 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2S K1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

2SK1825

Contextual Info: TO SHIBA 2SK1825 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : Vth = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

2sk18

Contextual Info: TOSHIBA 2SK1827 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2S K 18 2 7 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 4V Gate Drive Low Threshold Voltage : V'^ = 0.8~2.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

AM/Tuner

Abstract: 2SK937 2SC2812 FC21 2SK93-7
Contextual Info: FC21 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp. AM tuner RF Amp. Applications TENTATIVE Features •Composed of 2 chips, one being equivalent the 2SK937 and the other the 2SC2812 in the conventional CP package,