SGS M27C256
Abstract: TOP SIDE MARKING M27C512 M27C256 SGS-THOMSON mk48t08 BV 726 B m27c mk48t18 SGS M2732A Eprom 2015 static ram CP 1005
Text: QUALITY & RELIABILITY REPORT October 1996 to September 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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TOP SIDE MARKING M27C512
Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Text: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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QRR037/0697
TOP SIDE MARKING M27C512
m27c512 equivalent
4Q96
M27128A
M2716
M2732A
M2764A
QRR037
4Q96-1Q97
M27C256B datecode
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Untitled
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C256B datecode
Abstract: PART MARKING M27C512 M27C256B PART MARKING m27c512 equivalent M27C256 M27C512 marking M27128A M2716 M2764A QRR038
Text: QUALITY & RELIABILITY REPORT July 1996 to June 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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TOP SIDE MARKING M27C512
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C512 SGS-THOMSON
Abstract: M2201 ST93C46
Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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Marking STMicroelectronics m27c256
Abstract: M93C06 M27128A M2716 M2732A M2764A QRR9803 m29f002 CMOS E6DM CMOS F4S
Text: QRR9803 QUALITY & RELIABILITY REPORT October 1997 to September 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9803
Marking STMicroelectronics m27c256
M93C06
M27128A
M2716
M2732A
M2764A
QRR9803
m29f002
CMOS E6DM
CMOS F4S
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Marking STMicroelectronics m27c256
Abstract: MK48T08 Part Marking STMicroelectronics flash memory marking E5 mk48t18 M27C256 m48t35 mil-std-883* lead fatigue report on PLCC ST24W04
Text: QRR9801 QUALITY & RELIABILITY REPORT April 1997 to March 1998 - EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9801
Marking STMicroelectronics m27c256
MK48T08
Part Marking STMicroelectronics flash memory
marking E5
mk48t18
M27C256
m48t35
mil-std-883* lead fatigue
report on PLCC
ST24W04
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MK48T08
Abstract: mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64
Text: QRR9802 QUALITY & RELIABILITY REPORT July 1997 to June 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9802
MK48T08
mk48t18
M27128A
M2716
M2732A
M2764A
QRR9802
Marking STMicroelectronics m24c32
m28c64d
M24C64
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BV-1 501
Abstract: mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics
Text: QRR9704 QUALITY & RELIABILITY REPORT January 1997 to December 1997- EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION ST Microelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and
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QRR9704
BV-1 501
mk48t08
SGS M27C256
mk48t18
st microelectronics datecode M48T35
st microelectronics datecode
M27C256 SGS-THOMSON
ST25C16
CP 1005
marking 339 st microelectronics
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misplaced Wire Bonds
Abstract: TOP SIDE MARKING M27C512 1562Q M27C512 SGS-THOMSON
Text: QUALITY & RELIABILITY REPORT January to December 1995 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, EPROM, OTP Memory and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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FDIP24W
Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS
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M2716
450ns,
FDIP24W
M2732A
M2764A
FDIP28W
M27C64A
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
M27C256B
M27C64A
M29F040
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B2716
Abstract: m2716 FDIP24W M271616
Text: M2716 16 Kbit 2Kb x 8 NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
AI00784B
B2716
FDIP24W
M271616
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M93C46BN1
Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA
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M2716-1F1
M2716-1F6
M2716F1
M2716F6
M2732A-2F1
M2732AF1
M2732AF6
M2732A-3F1
M2764A-1F1
M2764A-20F1
M93C46BN1
PLCC32 512k
M24C32MN1
M93S46RBN1
ST24C04M1
200N1
M28F512-15C1
M27C1024-12F7
M27C256B-20C7
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1N914
Abstract: FDIP24W M2716
Text: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
1N914
FDIP24W
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1N914
Abstract: FDIP24W M2716
Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns 24 ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
1N914
FDIP24W
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1N914
Abstract: FDIP24W M2716
Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns 24 SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED 1 INPUTS and OUTPUTS TTL COMPATIBLE
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
FDIP24W
1N914
FDIP24W
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B2716
Abstract: B-2716
Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
B2716
B-2716
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TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
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M2716
M2732A
M2764A
M27128A
M27256
M27512
450ns,
TSOP40 Flash
m48z32y
M27V512
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
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B2716
Abstract: FDIP24W M2716 m2716 dip M2716* eprom
Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM
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M2716
525mW
132mW
M2716-1
350ns
M2716
450ns
B2716
FDIP24W
m2716 dip
M2716* eprom
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Untitled
Abstract: No abstract text available
Text: K 0 A KAOHSIUNG 3bE D m SD4b0fl2 OODDDlt □ • K O A ' f - H u - o \ t - u\.<\ - n - DV u / SEMICONDUCTOR DEVICES * MPU • ROM M bit 16K 32K EPROM M2716 • M 2732 M2764A TS27C64A M27128A M 27256 M27C256B M27512 M27C512 M27C1000 M27C1001 M27C1024 2KX8
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M2716
M2764A
TS27C64A
M27128A
M27C256B
M27512
M27C512
M27C1000
M27C1001
M27C1024
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B566
Abstract: H2732A EPROM M2764 M2164A B-566 210326 M27128A M27256 M2764 M2764A
Text: intei M2764A ADVANCED 64K 8K x 8 UV ERASABLE PROM Military inteligent Programming Algorithm — Fastest EPROM Programming inteligent Identifier?* Mode — Automated Programming Operations Two Line Control ± 10% Vcc Tolerance Available Military Temperature Range:
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M2764A
M2764A-25
M2764,
M27128A,
M27256
M2764A
536-bit
M2764
B566
H2732A
EPROM M2764
M2164A
B-566
210326
M27128A
M27256
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M2732
Abstract: S8416 AP-72 LM2732 INTEL AP-72 M271 M2716 Intel APPlication note M2716 Intel M2716* eprom
Text: in t e i M2732 32K 4K x 8 UV ERASABLE PROM M ILITARY Industry Standard Pinout. . . JEDEC Approved • 5V ±10% Vcc ■ Low Power Dissipation: 150 mA Max. Active Current 45 mA Max. Standby Current ■ Pin Compatible to Intel M2716 EPROM Fast Access Time: 450 us Maximum
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M2732
M2732:
M2732/S8416:
M2732)
M2716
M2732
768-bit
100pF
S8416
AP-72
LM2732
INTEL AP-72
M271
Intel APPlication note
M2716 Intel
M2716* eprom
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et2716q
Abstract: No abstract text available
Text: ET2716 M2716 SGS-THOMSON G Z 16K 2K X 8 NMOS UV EPROM 2048 x 8 ORGANIZATION. 525 MW MAX ACTIVE POWER, 132 MW MAX STANDBY POWER. ACCESS TIM E M /ET2716-1,350 ns ; M/ET2716, 450 ns. SINGLE 5V SUPPLY. STATIC-NO CLOCKS REQUIRED. INPUTS AND O UTPUTS TTL COMPATIBLE
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ET2716
M2716
/ET2716-1
M/ET2716,
/ET2716
24-pin
/ET2716
ET2716Q
et2716q
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