Untitled
Abstract: No abstract text available
Text: eGaN FET DATASHEET EPC2014 EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 16 mW ID , 10 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high
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EPC2014
EPC2014
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Untitled
Abstract: No abstract text available
Text: EPC2014 eGaN FET DATASHEET EPC2014 – Enhancement Mode Power Transistor VDSS , 40 V RDS ON , 16 mΩ ID , 10 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high
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EPC2014
EPC2014
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Untitled
Abstract: No abstract text available
Text: NOTE. The EPC9005 development board does not have any current or thermal protection on board. The EPC9005 development board showcases the EPC2014 eGaN FET. Although the electrical performance surpasses that for traditional silicon devices, their relatively smaller size does magnify the thermal management requirements. The EPC9005 is intended for bench evaluation with low
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EPC9005
EPC2014
1000kHz)
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Untitled
Abstract: No abstract text available
Text: 1 2 4 3 5 6 7 - 12 Vdc A U3 J1 1 2 CON2 8 C10 7 1uF, 25V 6 OUT NC NC NC NC NC GND VCC 1 C11 2 3 C4 4 1uF, 25V 1uF, 25V 9 5 IN GND A TP2 Keystone 5015 24V Max 5 B 5 GND Y 4 0.1uF, 25V GND J4 CON4 1 2 3 4 Opt. D5 C15 33 Q2 1 Ohm EPC2014 R13 Opt. 4.7uF, 50V Optional
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EPC2014
SDM03U40
LM5113
NC7SZ08L6X
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Untitled
Abstract: No abstract text available
Text: NOTE. The EPC9006 development board does not have any current or thermal protection on board. Figure 4: Typical Waveforms for VIN = 48 V to 5 V/5 A 1000kHz Buck converter CH1: VPWM Input voltage – CH2: (IOUT) Switch node current – CH4: (VOUT) Switch node voltage
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EPC9006
1000kHz)
EPC2007
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EPC8004
Abstract: No abstract text available
Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been
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AN015
EPC8000
ATS-54150K-C2-R0
EPC8004
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Untitled
Abstract: No abstract text available
Text: EPC reserves the right at any time, without notice, to change said circuitry and specifications. Demonstration Board Notification The EPC9101 board is intended for product evaluation purposes only and is not intended for commercial use. As an evaluation tool, it is not
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EPC9101
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Abstract: No abstract text available
Text: D C B A VOUT 1 C3 C1 220pF C2 MODE TRK/SS VCC R2 15k 22pF 0.1uF, 25V R8 39.2k R7 Zero Opt 6 5 4 3 2 S- RUN C5 S+ EXT 2 MODE 100k R12 R11 560k 11 12 13 14 0.1uF, 25V C7 16 15 R9 2.2 IntVCC PGND BG SW TG Boost VIN U1 LTC3833 R10 10.0k C18 Optional VIN PGOOD
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220pF
LTC3833
100pF
SDM03U40
LM5113TM
270nH
EPC9101
EPC2015
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R814
Abstract: No abstract text available
Text: 2 3 C90 1uF, 25V C94 100nF, 50V 5V OUT C91 1uF, 25V 5V 5V Control Supply Regulator 5 6 2.5Vref 2.5Vref OUT A C93 22uF, 25V Voltage Reference C50 100nF, 50V C71 100nF 50V J61 ExtOsc 3 ACVcoilFB 2 VcoilFB 1 .1” Male Vert. 1 R15 2 250E Control Method 1-2 = Internal Feedback
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100nF,
100nF
LM5113TM
16mohm
EPC2014
R814
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