PAL 0007 E MOSFET
Abstract: ALD1108
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110808/ALD110808A/ALD110908/ALD110908A QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.80V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision
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ALD110808/ALD110808A/ALD110908/ALD110908A
ALD110808A/ALD110808/ALD110908A/ALD110908
PAL 0007 E MOSFET
ALD1108
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Untitled
Abstract: No abstract text available
Text: I f\ A dvanced 1 L in e a r ALDI 726E/ALD1726 D e v ic e s , In c . EPAD ULTRA MICROPOWER OPERATIONAL AMPLIFIER BENEFITS KEY FEATURES EPAD Electrically Programmable Analog Device User programmable Vos trimmer Computer-assisted trimming Rail-to-rail input/output
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726E/ALD1726
ALD1726E/ALD1726
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Untitled
Abstract: No abstract text available
Text: Advanced I / I 1 I ^ ^¡ZS/ L in e a r ALD2722E/ALD2722 D e v ic e s , Inc. DUAL EPAD OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • 5V single supply operation • EPAD Electrically Programmable Analog Device • User programmable Vos trimmer • Computer-assisted trimming
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ALD2722E/ALD2722
ALD27222E/ALD2722
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Dual Gate MOSFET graphs
Abstract: ALD1148xx
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D PERFORMANCE CHARACTERISTICS OF EPAD® PRECISION MATCHED PAIR MOSFET FAMILY GENERAL DESCRIPTION ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory
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ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx
Dual Gate MOSFET graphs
ALD1148xx
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ALD1108EPCL
Abstract: ALD1108E ALD1110EPAL ALD1110E ALD1108EPC ALD1110EPA PA4600 PDIP8
Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD1108E/ALD1110E QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE EPAD GENERAL DESCRIPTION BENEFITS ALD1108E/ALD1110E are monolithic quad/dual EPAD® (Electrically Programmable Analog Device) N-channel MOSFETs with electrically
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ALD1108E/ALD1110E
ALD1108E/ALD1110E
CERDIP-16
ALD1108EPCL
ALD1108E
ALD1110EPAL
ALD1110E
ALD1108EPC
ALD1110EPA
PA4600
PDIP8
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depletion mode power mosfet
Abstract: 185uA ultra low igss pA
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.40V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s
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ALD110804/ALD110904
ALD110804/ALD110904
depletion mode power mosfet
185uA
ultra low igss pA
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MIC2159
Abstract: MIC2159YMME MIC2169A MSOP10 MSOP-10
Text: MIC2159 SYNCHRONOUS-itty Step-Down Converter IC General Description Features The MIC2159 is a high efficiency, simple to use synchronous buck controller ICs housed in a 10-pin MSOP ePAD package. The MIC2159 switches at 400kHz, allowing the smallest possible external components and is
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MIC2159
MIC2159
10-pin
400kHz,
10-pin
M9999-030509-B
MIC2159YMME
MIC2169A
MSOP10
MSOP-10
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ALD1722PAL
Abstract: ALD1722GPAL ALD1722 ALD1722G Advanced Linear Devices A741 ALD1722DA ALD1722SAL ICL7611 voltage controlled oscillator ua741
Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD1722/ALD1722G PRECISION LOW POWER CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION FEATURES & BENEFITS The ALD1722/ALD1722G is a monolithic precision low power CMOS operational amplifier intended for a broad range of precision applications
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ALD1722/ALD1722G
ALD1722/ALD1722G
ALD1722PAL
ALD1722GPAL
ALD1722
ALD1722G
Advanced Linear Devices
A741
ALD1722DA
ALD1722SAL
ICL7611
voltage controlled oscillator ua741
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H641
Abstract: 005 05 H64-1
Text: PACKAGE INFORMATION Micrel 64 LEAD EPAD-TQFP DIE UP (H64-1) +0.05 –0.05 +0.002 –0.002 +0.05 –0.05 +0.012 –0.012 +0.03 –0.03 +0.012 –0.012 +0.15 –0.15 +0.006 –0.006 +0.05 –0.05 +0.002 –0.002 Rev. 02 Rev.: B 1 Amendment: 0 Issue Date: March 2000
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H64-1)
H641
005 05
H64-1
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ALD2721E
Abstract: ALD2726 ALD2726E ALD2721
Text: ADVANCED LINEAR DEVICES, INC. ALD2726E/ALD2726 DUAL EPAD ULTRA MICROPOWER OPERATIONAL AMPLIFIER KEY FEATURES BENEFITS • EPAD Electrically Programmable Analog Device • User programmable VOS trimmer • Computer-assisted trimming • Rail-to-rail input/output
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ALD2726E/ALD2726
ALD2721E
ALD2726
ALD2726E
ALD2721
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1108e
Abstract: 1110E ALD1108E ALD1110E EA100
Text: EPAD Electrically Programmable Analog Device Definition of EPAD EPAD stands for Electrically Programmable Analog Device. It is a new classification of analog integrated circuits developed by Advanced Linear Devices. The ALD1108E/ ALD1110E are the quad/dual EPADs
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ALD1108E/
ALD1110E
EA100
1108e
1110E
ALD1108E
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fet_11123.0
Abstract: No abstract text available
Text: Category: FET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11123.0 Low Voltage Micropower LC Colpitts Oscillator Circuit with Active Load Description This is an ultra low-voltage LC (Colpitts) oscillator circuit using EPAD MOSFETs with active load and output
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ALD114804
fet_11123.0
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fet_11113.0
Abstract: No abstract text available
Text: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Differential EPAD Schematic no. fet_11113.0 MOSFET Matched-Pair Circuit with Buffered and Summed Outputs Description The matched pair EPAD MOSFET Array provides two separate, matched outputs at DN1 and DN2. Each output could be biased to provide the same type of output characteristics. For example, both
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EH4295
Abstract: energy-harvesting EH4200
Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN EH4295 MICROPOWER STEP UP LOW VOLTAGE BOOSTER MODULE GENERAL DESCRIPTION FEATURES The EH4295 Micropower Step Up Low Voltage Booster Module, part of the EH4200 Series of Micropower Step Up Low Voltage Boosters, is a self-powered voltage-booster module that converts
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EH4295
EH4295
EH4200
EH301
energy-harvesting
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fet_11112.0
Abstract: No abstract text available
Text: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Differential EPAD Schematic no. fet_11112.0 MOSFET Matched-Pair Circuit with Summing Output Description The matched pair EPAD MOSFET Array provides two separate, matched outputs at DN1 and DN2. Each output could be biased to provide the same type of output characteristics. For example, both
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fet_11102.0
Abstract: No abstract text available
Text: CIRCUIT IDEAS FOR DESIGNERS Category: MOSFET Basic EPAD Schematic no. fet_11102.0 MOSFET Connection with Current Source Drive Description This circuit shows a basic diode–connected MOSFET connection driven by a constant current source. The drain terminal is shorted to the gate terminal. When connected in this manner, this
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EH4205
Abstract: energy-harvesting
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D EH4205 MICROPOWER STEP UP LOW VOLTAGE BOOSTER MODULE GENERAL DESCRIPTION FEATURES The EH4205 Micropower Step Up Low Voltage Booster Module, part of the EH4200 Series of Micropower Step Up Low Voltage Boosters, is a self-powered voltage-booster module that converts
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EH4205
EH4205
EH4200
EH301
energy-harvesting
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fet_11109.0
Abstract: No abstract text available
Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11109.0 Diode–Connected EPAD MOSFET with Buffer Amplifier Output Description This circuit is a diode–connected EPAD MOSFET with buffer amplifier set up in the non-inverting amplifier configuration. VO is equal to VT multiplied by the gain G=1+RB/RA. The drain DN1 of the
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fet_11105.0
Abstract: No abstract text available
Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Matched Pair EPAD Schematic no. fet_11105.0 MOSFET with Dual Supplies Description This circuit uses a matched pair N-channel MOSFET Array or EPAD MOSFET for primary temperature and other electrical error effect matching and cancellation. The gate of device 1 and
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osc_42007.0
Abstract: No abstract text available
Text: Category: Oscillators CIRCUIT IDEAS FOR DESIGNERS Schematic no. osc_42007.0 0.5V Crystal Oscillator Circuit with Output Buffer Description This is an ultra low-voltage crystal oscillator circuit using EPAD MOSFETs with active load and output buffer operating on a single 0.5V power supply, which results in ultra low power consumption. This circuit is the
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fet_11121.0
Abstract: No abstract text available
Text: Category: FET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11121.0 Ultra Low Voltage Crystal Oscillator Circuit using Active Loads Description This is an ultra low-voltage crystal oscillator circuit using EPAD MOSFETs with active load and output buffer. This circuit is similar to a standard crystal oscillator circuit used in 5V circuits. However, at low operating
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ALD114804
fet_11121.0
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fet_11110.0
Abstract: No abstract text available
Text: Category: MOSFET CIRCUIT IDEAS FOR DESIGNERS Select VO by Using EPAD Schematic no. fet_11110.0 Transistor and Resistor Ratios Description This circuit shows an EPAD MOSFET and resistor network with an output that can scaled to any desired voltage VO. By careful selection of the EPAD MOSFET and resistor values as well as resistor
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fet_11117.0
Abstract: No abstract text available
Text: Category: FET CIRCUIT IDEAS FOR DESIGNERS Schematic no. fet_11117.0 Ultra Low Voltage N-Channel Analog Switch Transmission Gate Description An EPAD MOSFET acts as an analog transmission switch when it is turned on with an appropriate gate voltage, where a conducting channel forms between the drain and the source terminals. The on-resistance of the
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zero crossing detector ic with 90v
Abstract: ald110800 ALD110900A ALD110800A ALD110800APCL
Text: e ADVANCED LINEAR DEVICES, INC. EN FEATURES ALD110800A/ALD110800/ALD110900A/ALD110900 are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are members of the EPAD Matched Pair MOSFET Family.
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ALD110800/ALD110800A/ALD110900/ALD110900A
ALD110800A/ALD110800/ALD110900A/ALD110900
ALD110800/
ALD110900
sign010
zero crossing detector ic with 90v
ald110800
ALD110900A
ALD110800A
ALD110800APCL
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