PAL 0007 E MOSFET
Abstract: ALD1108
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110808/ALD110808A/ALD110908/ALD110908A QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.80V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision
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ALD110808/ALD110808A/ALD110908/ALD110908A
ALD110808A/ALD110808/ALD110908A/ALD110908
PAL 0007 E MOSFET
ALD1108
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Dual Gate MOSFET graphs
Abstract: ALD1148xx
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D PERFORMANCE CHARACTERISTICS OF EPAD® PRECISION MATCHED PAIR MOSFET FAMILY GENERAL DESCRIPTION ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory
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ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx
Dual Gate MOSFET graphs
ALD1148xx
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depletion mode power mosfet
Abstract: 185uA ultra low igss pA
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.40V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s
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ALD110804/ALD110904
ALD110804/ALD110904
depletion mode power mosfet
185uA
ultra low igss pA
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zero crossing detector ic with 90v
Abstract: ald110800 ALD110900A ALD110800A ALD110800APCL
Text: e ADVANCED LINEAR DEVICES, INC. EN FEATURES ALD110800A/ALD110800/ALD110900A/ALD110900 are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are members of the EPAD Matched Pair MOSFET Family.
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ALD110800/ALD110800A/ALD110900/ALD110900A
ALD110800A/ALD110800/ALD110900A/ALD110900
ALD110800/
ALD110900
sign010
zero crossing detector ic with 90v
ald110800
ALD110900A
ALD110800A
ALD110800APCL
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Untitled
Abstract: No abstract text available
Text: nRF905 Single chip 433/868/915MHz Transceiver Product Specification Key Features • • • • • • • • • • • • • • • True single chip GFSK transceiver in a small 32 pin package 32L QFN 5x5mm ShockBurst mode for low power operation
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nRF905
433/868/915MHz
10dBm
nRF905
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PAL 0007 E MOSFET
Abstract: Amp. mosfet 1000 watt PAL 007 c PAL 007 E MOSFET ultra low igss pA ALD110800 ALD110802 ALD110802PCL ALD110802SCL ALD110902PAL
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110802/ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.20V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110802/ALD110902 are monolithic quad/dual enhancement mode NChannel MOSFETS matched at the factory using ALD’s proven EPAD®
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ALD110802/ALD110902
ALD110802/ALD110902
PAL 0007 E MOSFET
Amp. mosfet 1000 watt
PAL 007 c
PAL 007 E MOSFET
ultra low igss pA
ALD110800
ALD110802
ALD110802PCL
ALD110802SCL
ALD110902PAL
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200H
Abstract: MDT10P22 1k BIT WORD STATIC RAM
Text: MDT10P22 DF 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology to achieve high speed, small size, low power and high noise immunity. On chip memory includes 1K words EPROM and80 bytes static RAM. Four comparator inputs with external Vref
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MDT10P22
and80
14-bit
MDT10P22
200H
1k BIT WORD STATIC RAM
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110802/ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.20V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110802/ALD110902 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s
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ALD110802/ALD110902
ALD110802/ALD110902
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MDT10P55B1S
Abstract: MDT10P55B1P mdt10p55b3p MDT10P55B 000-3FF
Text: MDT10P55B u Power-on Reset u Power edge-detector Reset This EPROM-Based 8-bit micro-controller uses a fully u Sleep Mode for power saving static CMOS technology process to achieve higher u 5 types of oscillator can be selected by 1. General Description speed
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MDT10P55B
600uA
1000ns
MDT10P55B1S
MDT10P55B1P
mdt10p55b3p
MDT10P55B
000-3FF
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Untitled
Abstract: No abstract text available
Text: Supertex inc. HV9973 Isolated, Constant Current LED Driver Features General Description ►► Programmable true constant current operation ►► ±3% LED current accuracy ►► Adaptive to external component tolerances and parasitics ►► Primary-side current sensing
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HV9973
280-400VDC
HV9973
100kHz
280-400VDC.
DSFP-HV9973
A072613
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ALD114904ASAL
Abstract: No abstract text available
Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD114804/ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS th = -0.40V GENERAL DESCRIPTION APPLICATIONS ALD114804/ALD114804A/ALD114904/ALD114904A are high precision monolithic
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ALD114804/ALD114804A/ALD114904/ALD114904A
characteris010
ALD114904ASAL
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode
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ALD114835/ALD114935
ALD114835
ALD114835/ALD114935
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voltage to frequency converter using ic 556 timer
Abstract: fa7711 7711v soft start circuit 555 timer
Text: e-Front runners FA7711V Quality is our message FUJI Power Supply Control 1C FA7711V Application Note Mar-2005 Fuji Electric Device Technology Co., Ltd. F 3 e-Front runners FA7711V Quality is our message - WARNING-1.This Data Book contains the product specifications, characteristics, data, materials, and structures as of
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FA7711V
Mar-2005
100nF
voltage to frequency converter using ic 556 timer
fa7711
7711v
soft start circuit 555 timer
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CURRENT MIRRORs application
Abstract: ALD114804 ALD114804A ALD114804APCL ALD114804ASCL ALD114804PCL ALD114804SCL ALD114904 ALD114904APAL ALD114904ASAL
Text: ADVANCED LINEAR DEVICES, INC. e TM EPAD EN AB LE D ALD114804/ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® MATCHED PAIR MOSFET ARRAY VGS th = -0.40V GENERAL DESCRIPTION APPLICATIONS ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual
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ALD114804/ALD114804A/ALD114904/ALD114904A
CURRENT MIRRORs application
ALD114804
ALD114804A
ALD114804APCL
ALD114804ASCL
ALD114804PCL
ALD114804SCL
ALD114904
ALD114904APAL
ALD114904ASAL
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ALD110900
Abstract: depletion MOSFET n channel depletion MOSFET N-Channel Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET high voltage ultra low igss pA ALD110800 ALD114804 ALD114813 ALD114813PCL
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are monolithic quad/dual depletion mode N-Channel
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ALD114813/ALD114913
ALD114813/ALD114913
ALD110900
depletion MOSFET
n channel depletion MOSFET
N-Channel Depletion-Mode MOSFET
N-Channel Depletion-Mode MOSFET high voltage
ultra low igss pA
ALD110800
ALD114804
ALD114813
ALD114813PCL
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -1.30V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114813/ALD114913 are high precision monolithic quad/dual depletion mode
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ALD114813/ALD114913
ALD114813/ALD114913
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110814/ALD110914 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +1.40V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110814/ALD110914 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s
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ALD110814/ALD110914
ALD110814/ALD110914
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depletion MOSFET
Abstract: ultra low igss pA depletion mode power mosfet ALD110900 Epad Product ALD110800 ALD114804 ALD114813 ALD114835 n channel depletion MOSFET
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY GENERAL DESCRIPTION ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s
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ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx
ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx
depletion MOSFET
ultra low igss pA
depletion mode power mosfet
ALD110900
Epad Product
ALD110800
ALD114804
ALD114813
ALD114835
n channel depletion MOSFET
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ultra low igss pA
Abstract: ALD110800 depletion MOSFET Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET ALD114804 ALD114835 ALD114835PCL ALD114835SCL ALD114935
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are monolithic quad/dual depletion mode N-Channel
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ALD114835/ALD114935
ALD114835/ALD114935
ultra low igss pA
ALD110800
depletion MOSFET
Depletion-Mode MOSFET
N-Channel Depletion-Mode MOSFET
ALD114804
ALD114835
ALD114835PCL
ALD114835SCL
ALD114935
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18PIN
Abstract: 200H 20PIN MDT10P22
Text: MDT10P22 DF LFXT–––低频晶体振荡器 XTAL–––标准晶体振荡器 HFXT–––高频晶体振荡器 1. 概述 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。
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MDT10P22
150us
18PIN
I/O12
O20PIN
IO2224
MDT10P22
20MHz
18PIN
200H
20PIN
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MA4VAT900-1277T
Abstract: No abstract text available
Text: HMIC PIN Diode Variable Attenuator 0.80-1.0 GHz Features MA4VAT900-1277T V2 MLP 3mm Package—Circuit Side View • • • • • • • Bandwidth: 0.80 GHz to 1.00 GHz <1.0 dB Insertion Loss, Typical 1.4:1 VSWR, Typical 24 dB Attenuation, Typical 40 dBm IIP3, Typical 1MHz Offset, @ +0dBm Pinc
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MA4VAT900-1277T
MA4VAT900-1277T
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.40V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s
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ALD110804/ALD110904
ALD110804/ALD110904
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. EN GENERAL DESCRIPTION FEATURES ALD110800A/ALD110800/ALD110900A/ALD110900 are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are members of
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ALD110800/ALD110800A/ALD110900/ALD110900A
ALD110800A/ALD110800/ALD110900A/ALD110900
ALD110800/
ALD110900
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MA4VAT900-1277T
Abstract: No abstract text available
Text: MA4VAT900-1277T HMIC PIN Diode Variable Attenuator 0.8 - 1.0 GHz Features Rev. V3 MLP 3mm Package—Circuit Side View • • • • • • • Bandwidth: 0.80 GHz to 1.00 GHz <1.0 dB Insertion Loss, Typical 1.4:1 VSWR, Typical 24 dB Attenuation, Typical
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MA4VAT900-1277T
MA4VAT900-1277T
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