EP2015 Search Results

Contextual Info: EP2015D Die Fast Quad PNP Array tc o I—I VI Ö Absolute Maximum Ratings < ta = 2 5 = 0 Pq Power Dissipation Each Transistor 500 mW T ^ = 25°C Ta Operating Tem perature Range —55°C to + 125°C Tg Storage Tem perature - 656C to +150°C Tj Maximum Junction Temperature

current mirrors wilson

Abstract: 8E-15 2N3906 EP2015ACN EP2015C EP2015CM EP2015CN MPQ3906 TPQ3906 PNP Monolithic Transistor Pair
Contextual Info: EP2015C/EP2015AC HIGH PERFORMANCE ANALOG INTEGRATED ClRCunS FastQuad PNP Array F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides A.C. performance

Contextual Info: GUIDE ARRAY SELECTION élantec Elantec Transistor Arrays HÌeH PERFÒRM/lMCE ANAIÛS INTEGRATED CIRCUITS Vbe M atch ELANTEC P a rt N um ber EP2015C EP2015A C EN 2016C Hfe M atch Min Hfe BVeeo O ver O ver BVcbo O ver 25°C 25°C O ver T em p Tem p Tem p Tem p

smd transistor b44

Abstract: S57 SMD P-N-P CURRENT MIRROR 2N3906 SMD PNP Monolithic Transistor Pair transistor AY PNP smd TRANSISTOR SMd jg data 2N3906 NPN pnp MATCHED PAIRS array EP2015CJ
Contextual Info: 315TSS7 □□□SSñfl ÜST BIELA INC Features General D escription • • • • • T he EP2015 fam ily are quad m onolithic vertical P N P tran sisto r arrays w hich offer excellent param etric m atching an d hig h speed perform ance. T he 350 M H z ft provides A.C. perform ance

14-PIN

Abstract: transistor array
Contextual Info: ARRAY SELECTION GUIDE Elantec Transistor Arrays Vbe M atch Hfe M atch M in Hfe BVceo BVcbo O ver O ver O ver D escription T est T em p P ackages 25° T em p 25° C T em p 25°C T em p O ver T em p Min EP2015 Monolithic, D.I. —55°C to + 125°C 5 mV 10 mV 10% 20% 75

Contextual Info: Fast Quad PNP A rray F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric m atching and high speed performance. The 350 M Hz ft provides A.C. performance

Contextual Info: Fast Quad PNP Army F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • T he EP2015 fam ily are quad m onolithic vertical P N P tran sisto r arrays w hich offer excellent p aram etric m atch in g and h igh speed perform ance. T he 350 M H z ft provides A.C. perform ance

PNP Monolithic Transistor Pair

Abstract: EM201 pnp array NPN Monolithic Transistor Pair simple SL 100 NPN Transistor 2N3906 EP2015ACN EP2015CM ahw transistor MPQ3906
Contextual Info: HIGH PERFO RM AN CE ANALOG INTEGRATED ClBCU IT S e p 2 oisc / e p 2 o is a c Fast Quad PNP Array Features General Description • • • • • T he EP2015 fam ily are quad m onolithic vertical P N P tran sisto r arrays w hich offer excellent param etric m atching and high

pnp array

Abstract: smd transistor db2 current mirrors wilson NPN pnp MATCHED PAIRS array 4 npn transistor ic 14pin 2n3906 equivalent transistor smd transistor b44 ELANTEC 510
Contextual Info: 315^557 0GGE5ÛÛ GST M E L A INC ' T - * l 3 - 'Z - 5 1 F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric m atching and high speed performance. The 350 M H z ft provides A.C. performance

2n3906 equivalent transistor

Abstract: 2N3906 PNP bipolar junction transistor EP2015CN 2N3906 EP2015ACN EP2015CM MPQ3906 TPQ3906 current mirror cascode NPN pnp MATCHED PAIRS array
Contextual Info: HIGH PERFO RM ANCE A N A tfla iNTFGRATEB CIRCUITS EP2015 C/EP2 015A C Fast Quad PNP Array F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high

Contextual Info: E L AN TE C INC MIE D 312=1537 ODQlflS? 2 O ELA M to o l-l w d EP2015D Die Fä$fQuadPNP4^rßy "T'<43> '2,3 Absolute Maximum Ratings t a = 25° q Pp Power Dissipation Each Transistor . 500 mW (T ^ = 25°C Ta Operating Temperature Range —55°C to + 125°C

EN2016ACN

Abstract: tmax t7 Tmax T7 S 800 transistor SMD 2n3904 2N3904 EN2016ACJ EN2016CJ EN2016CM EN2016CN MPQ3904
Contextual Info: ELANTEC INC MIE J> S 312^557 0001757 = ES EL A EN2016/E N 2016A _ _ . 2 .5 Fast QuadNPN A rray ; HIGH PERFORMANCEANALOGINTEGRATEDCIRCUITS H 2 tss o h-* Ci s F eatures G eneral D escription • • • • • The EN2016 family are quad monolithic vertical N P N transis­

CA3084

Abstract: LM 358 opamp PMI OP AMP MAX9698 CTS0032 lm 3906 1339 teledyne Teledyne 1339 CTS0033 motorola s200
Contextual Info: ELANTEC INC MIE D 312^557 ODDIIbb ö « E L A Analog that’s ahead o f the times. P R O D U C T L IN E M A R C H 1991 A m p lif ie r s V id e o S p e c i f ic P r o d u c t s EHA2400/EHA2400A 4 Channel Programmable Amp EL2082/EL2082C 200 MHz Variable Gain Amp

Contextual Info: ELANTEC MIE D INC E3 312^557 G001757 T El ELA Fast QuadNPN Arrau H IGH P E R FO R M A N C E A N A LO G IN TEG R ATED CIRCUITS "T:cV ?> • 2 ,S F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • The EN2016 family are quad monolithic vertical N PN transis­

2016A

Abstract: N2016A
Contextual Info: n t r r e n 2 o i6 /e n 2 o i6 A F a st Q u ad N P N A rra y F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • The EN2016 family are quad monolithic vertical N P N transis­ tor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides AC performance

4 npn transistor ic 14pin

Abstract: TMAX T7S T71E ic l00a PNP Monolithic Transistor Pair 2N3904 EN2016CJ EN2016CN MPQ3904 TPQ3904
Contextual Info: E L A N T E C INC 3 1 5 *155 ? Q O Q l G S b saE D HIGH PERFORMANCE ANAUK INTEGRATED CIRCUITS EN2016/EN2016A Fast Quad NPN Array T - ^ S -A S ~ F eatu res G eneral D escrip tion • • • • • The EN2016 family are quad monolithic vertical N P N transis­

4 npn transistor ic 14pin

Abstract: npn tr array enzo EN2016CM "PNP Transistor array" 312 2N3904 dual 2N3904 NPN Transistor 2N3904 EN2016 EN2016CN
Contextual Info: sÊ w m + m r H » PERFO RM AN CE AN ALOG ÌNTE6RATEP CIRCUITS F e a tu res • • • • • • • • • • F our independent fast N P N ’s 350 M H z ft T ig h t Vfce m atching— 1 mV T ig h t H fe m atching— 5% One chip construction w ith dielectric isolation

smd transistor 6c

Contextual Info: SflE D 312^357 □ □ □ 2 5 tiö TTT B E L A EN2016 â b fltK EN2016 F asi QuadNPN A rray äm äB äw äsR M B . 'M3-ZS ELANTEC INC F eatu res G eneral D escrip tion • • • • • T he EN2016 fam ily are quad m onolithic vertical N P N tran sis­

Contextual Info: EN2016C ÉISHlSC Fast EN2016 C Quad NPN Array HWH PERFORMANCE ANALOG INTEGRATED CIRCUITS Features G eneral Description The EN2016 family are quad monolithic vertical N PN transis­ tor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides AC performance

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A