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    ENHANCE Search Results

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    AM79C984AJC Rochester Electronics LLC AM79C984 - Enhanced Integrated Multiport Repeater, 10Base-T Visit Rochester Electronics LLC Buy
    AM79C984AKC Rochester Electronics LLC AM79C984 - Enhanced Integrated Multiport Repeater, 10Base-T Visit Rochester Electronics LLC Buy
    EL5105IWZ-T7 Renesas Electronics Corporation 700MHz Slew Enhanced VFA Visit Renesas Electronics Corporation
    EL5203IYZ-T7 Renesas Electronics Corporation 400MHz Slew Enhanced VFA Visit Renesas Electronics Corporation
    EL5104IWZ-T7A Renesas Electronics Corporation 700MHz Slew Enhanced VFA Visit Renesas Electronics Corporation
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    Qualcomm LK-VAM-USB-DONGLE(ENHANCED)

    USB DONGLE (ENHANCED)
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    DigiKey LK-VAM-USB-DONGLE(ENHANCED) Bulk 1
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    Microchip Technology Inc VOP-ENHANCED_ELEM_EVAL

    Enhanced Element Evaluation (mandatory), Projected EOL: 2049-11-19
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    Nexperia 2N7002NXAKR

    MOSFETs 2N7002NXAK/SOT23/TO-236AB
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    TTI 2N7002NXAKR Reel 7,650,000 3,000
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    Nexperia 2N7002,215

    MOSFETs 2N7002/SOT23/TO-236AB
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    TTI 2N7002,215 Reel 4,860,000 3,000
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    Nexperia 2N7002/HAMR

    MOSFETs SOT23 N CHAN 60V
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    TTI 2N7002/HAMR Reel 3,081,000 3,000
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    ENHANCE Datasheets (308)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    801-6209-0 Enhanced Video Devices Evaluation and Demonstration Boards and Kits, Programmers, Development Systems, DEVELOPMENT KIT DKA-ANALOG Original PDF
    801-6211-0 Enhanced Video Devices Evaluation and Demonstration Boards and Kits, Programmers, Development Systems, DEVELOPMENT KIT DKD-DIGITAL Original PDF
    ATX-0250GA Enhance Electronics AC/DC CNVT 3.3V 5V 2X12V 2X-12V Original PDF
    DM1M32SJ1-12 Enhanced Memory Systems 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ1-12L Enhanced Memory Systems 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ1-15 Enhanced Memory Systems 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ1-15I Enhanced Memory Systems 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ1-15L Enhanced Memory Systems 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ-12I Enhanced Memory Systems 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ-12L Enhanced Memory Systems 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ-15I Enhanced Memory Systems 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ-15L Enhanced Memory Systems 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ6-12 Enhanced Memory Systems Multibank EDO 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ6-12I Enhanced Memory Systems Multibank EDO 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ6-12L Enhanced Memory Systems Multibank EDO 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ6-15 Enhanced Memory Systems Multibank EDO 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ6-15I Enhanced Memory Systems Multibank EDO 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ6-15L Enhanced Memory Systems Multibank EDO 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ7-12 Enhanced Memory Systems Multibank EDO 1Mbx32 Enhanced DRAM SIMM Original PDF
    DM1M32SJ7-12I Enhanced Memory Systems Multibank EDO 1Mbx32 Enhanced DRAM SIMM Original PDF
    ...

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    3 phase ac sinewave phase inverter single ic

    Abstract: U5J diode
    Text: MG50Q2YS40 Unit in mm HIGH POW ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed tf=0.5/is M ax. trr = 0.5//s(Max.) Low Saturation Voltage : v CE(sat) =4.0V(Max.) Enhancement-Mode Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG50Q2YS40 2-94D1A 3 phase ac sinewave phase inverter single ic U5J diode

    Untitled

    Abstract: No abstract text available
    Text: G T 1 5 J 1 0 2 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 1 0 ± 0 -3 . ¿ 3 .2 ± 0 .2 2 .7 ± 0 .2 . High Input Impedance . High Speed : t£=0.35iJs Max. . Lou Saturation Voltage : VcE(sat)"*.OV(Max.) . Enhancement-Mode MAXIMUM RATINGS (Ta«250C)


    OCR Scan     		PDF 35iJs Tc-25 Ta-25

    SMNS405A

    Abstract: cms405 CMS408 CMS406
    Text: CMS405, CMS406 4 MEGABYTE CMS407, CMS408 2 MEGABYTE DRAM MEMORY CARDS SMNS405A-JUNE1991-REVISED JANUARY 1993 * Credit Card Size 85.6 mm x 54 mm x 60-PIN MEMORY CARD (CONNECTOR VIEW 3.4 mm) Single 5-V Power Supply (±5% Tolerance) * Enhanced Page Mode Operation


    OCR Scan     		PDF CMS405, CMS406 CMS407, CMS408 SMNS405A-JUNE1991-REVISED 60-PIN CMS405 CMS407 SMNS405A

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358

    D945 TRANSISTOR

    Abstract: d945
    Text: UC1842A/3 A/4A/5 A UC2842A/3A/4A/5A UC3842A/3A/4A/5A U IM IT R O D E Current Mode PWM Controller DESCRIPTION Low Start Up Current <0.5mA Trimmed Oscillator Discharge Current Automatic Feed Forward Compensation Pulse-by-Pulse Current Limiting Enhanced Load Response Characteristics


    OCR Scan     		PDF UC1842A/3 UC2842A/3A/4A/5A UC3842A/3A/4A/5A UC1842A/3A/4A/5A UC3842/3/4/5 95VAC 130VA z/60Hz) 40kHz 100mV D945 TRANSISTOR d945

    LVC244

    Abstract: No abstract text available
    Text: I SN74LVC241 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS SGAS343 - MARCH 1994 DB, DW, OR PW PACKAGE TOP VIEW E P IC (Enhanced-Performance Implanted CMOS) Submicron Process Typical V q lp (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C Typical V q HV (Output V qh Undershoot)


    OCR Scan     		PDF SN74LVC241 SGAS343 SN74L LVC244

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC540 OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS JA N U A R Y 1993 • Space-Saving Package Option: Shrink Small-Outline Package DB Features EIAJ 0.65-mm Lead Pitch DB, DW, OR PW PACKAGE (TOP VIEW) • EPIC (Enhanced-Performance implanted CMOS) Submicron Process


    OCR Scan     		PDF SN74LVC540 65-mm MIL-STD-883C, JESD-17

    TL054A1

    Abstract: TL051 TL051 equivalent diode u1d 315
    Text: TL05x, TL05XA, TL05xY ENHANCED-JFET LOW-OFFSET OPERATIONAL AMPLIFIERS _ SLOS178 - FEBRUARY 1997 Direct Upgrades to TL07x and TL08x BiFET Operational Amplifiers Faster Slew Rate 20 V/|js Typ Without Increased Power Consumption • •


    OCR Scan     		PDF TL05x, TL05XA, TL05xY SLOS178 TL07x TL08x TL051 TL05x TL054A1 TL051 equivalent diode u1d 315

    MG50H2YS1

    Abstract: No abstract text available
    Text: MG50H2YS1 GTR MODULE_ SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES : . High Input Impedance : tf= 1 . 0/is Max. . High Speed trr = 0 . 5 y s ( M a x .) . Enhancement-Mode . Includes a Complete Half Bridge in one


    OCR Scan     		PDF MG50H2YS1 MG50H2YS1

    5bti

    Abstract: No abstract text available
    Text: TPS7133QPW P, TPS713 3Y M IC R O P O W ER LO W -D R O P O U T LD O V O L T A G E R E G U L A T O R S SLVS101A-FEBRUARY 1 9 9 5 - REVISED AUGUST 1995 Thermally Enhanced Surface-Mount Package (PWP) PWP PACKAGE (TOP VIEW) High-Current (500-mA) LDO Regulator


    OCR Scan     		PDF TPS7133QPW TPS713 SLVS101A-FEBRUARY 500-mA) TPS7133QPWP 5bti

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode •


    OCR Scan     		PDF GT2QG102 GT20G102 2-10S2C

    Untitled

    Abstract: No abstract text available
    Text: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode


    OCR Scan     		PDF MG300J1US51 2-70v MG300J1US51

    Untitled

    Abstract: No abstract text available
    Text: a d v a n c e in fo r m a 7to/vUT54ACS 191/UT54ACTS191 Radiation-Hardened Synchronous 4-Bit Up-Down Counters FEATURES • Single dow n/up count control line • Look-ahead circuitry enhances speed of cascades counters • Fully synchronous in count inodes


    OCR Scan     		PDF UT54ACS 191/UT54ACTS191 16-pin

    GT15Q101

    Abstract: No abstract text available
    Text: GT15Q101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm #3 2±0.2 MOTOR CONTROL APPLICATIONS. I5.9MAX . High Input Impedance . High Speed : tf= 0 . 5ys Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode I1AXIMUM RATINGS (Ta=25°C) SYMBOL


    OCR Scan     		PDF GT15Q101 2-16C1C GT15Q101

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.


    OCR Scan     		PDF GT30J301

    T5CD

    Abstract: No abstract text available
    Text: U M C U M 2661 Enhanced Programmable Communications Interface EPCI Features • Automatic serial echo mode (échoplex) ■ Local or remote maintenance loop back mode Baudrate: de to IM bps (1X clock) - de to 62.5K bps (16X clock) - de to 15.625K bps (64X clock)


    OCR Scan     		PDF UM2661 UM2661-2 UM2661-3 T5CD

    GT50J102

    Abstract: No abstract text available
    Text: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.


    OCR Scan     		PDF GT50J102 961001EAA GT50J102

    CO2V

    Abstract: No abstract text available
    Text: SN74ALVC16600 18-BIT UNIVERSAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS JA N U A R Y 1993 Member of the Texas Instruments Widebus Family DGG OR DL PACKAGE TOP VIEW ÖEÄE [ LEAB [ A1 [ GND [ A2 [ A3 [ EPIC™ (Enhanced-Performance Implanted CMOS) Submicron Process


    OCR Scan     		PDF SN74ALVC16600 18-BIT MIL-STD-883C, CO2V

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC16543 16-BIT REGISTERED TRANSCEIVER WITH 3-STATE OUTPUTS 3CAS317A- NOVEMBER 1993 - REVISED OCTOBER 199S | • Member of the Texas Instruments Wldobua Family • EP/C™ Enhanced-Performance Implanted CMOS Submicron Process • Typical V q l p (Output Ground Bounce)


    OCR Scan     		PDF SN74LVC16543 16-BIT 3CAS317A- JESD-17 300-mll

    Untitled

    Abstract: No abstract text available
    Text: SN74LVC841 10-BIT BUS-INTERFACE D-TYPE LATCH WITH 3-STATE OUTPUTS M ARCH 1993 OB, DW, OR PW PACKAGE TOP VIEW • Space-Saving Package Option: Shrink Small-Outline Package (DB) Features EIAJ 0.65-mm Lead Pitch • EPIC (Enhanced-Performance Implanted


    OCR Scan     		PDF SN74LVC841 10-BIT 65-mm MIL-STD-883C,

    GT60M101

    Abstract: No abstract text available
    Text: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0


    OCR Scan     		PDF GT60M101 --15V GT60M101

    Untitled

    Abstract: No abstract text available
    Text: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)


    OCR Scan     		PDF GT30J311 30/iS

    Untitled

    Abstract: No abstract text available
    Text: I SN74LVC158 QUADRUPLE 2-LINE TO 1-LINE DATA SELECTOR/MULTIPLEXER SCAS342 - MARCH 1994 D, DB, OR PW PACKAGE TOP VIEW EPIC (Enhanced-Performance Implanted CMOS) Submicron Process Typical V q l p (Output Ground Bounce) < 0.8 V at Vc c = 3.3 V, TA = 25°C


    OCR Scan     		PDF SN74LVC158 SCAS342

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA GT10J301 GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS 1 5 .9 M A X m The 3rd Generation. Enhancement-Mode. High Speed. : tf=0.30,«s Max.


    OCR Scan     		PDF GT10J301