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Catalog Datasheet | Type | Document Tags | |
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2SA1417
Abstract: 2SC3647
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Original |
2SA1417 2SC3647 EN2006C 2SA1417 2SC3647 | |
Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. |
Original |
2SA1417 2SC3647 EN2006C 2SA1417 | |
Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. |
Original |
2SA1417 2SC3647 EN2006C 2SA1417 | |
Contextual Info: 2SA1417 / 2SC3647 Ordering number : EN2006C SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1417 / 2SC3647 High-Voltage Switching Applications Features • • • Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. |
Original |
2SA1417 2SC3647 EN2006C 2SA1417 |