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    EMITTER 660 880 940 Search Results

    EMITTER 660 880 940 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC1235F Rochester Electronics LLC MC1235 - Gate, ECL, CDFP14 Visit Rochester Electronics LLC Buy
    11C90DM Rochester Electronics LLC 11C90 - Prescaler, ECL Series Visit Rochester Electronics LLC Buy
    11C90DM/B Rochester Electronics LLC 11C90 - Prescaler, ECL Series Visit Rochester Electronics LLC Buy
    11C05DM/B Rochester Electronics LLC 11C05 - Prescaler, ECL Series Visit Rochester Electronics LLC Buy
    MC1218L Rochester Electronics LLC MC1218 - ECL to TTL Translator, ECL, CDIP14 Visit Rochester Electronics LLC Buy

    EMITTER 660 880 940 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    oximeter

    Abstract: oximeter schematic finger probe METRIX schematic symbols 660 880 940 led oximeter 660 940 D 880 criticare 940 nm LED
    Text: PHOTONIC DETECTORS INC. Four Drive Emitter, Oximeter Component 880/660/940 nm Type PDI-E839 Criticare, Data Scope, NovaMetrix,Ohmeda& Scimed capable PACKAGE DIMENSIONS INCH (mm) .265 [6.73] CL .161 [4.08] CL .133 [3.37] CL .105 [2.65] .075 [1.90] .055 [1.40]


    Original     		PDI-E839 PDI-E839 100-PDI-E839 oximeter oximeter schematic finger probe METRIX schematic symbols 660 880 940 led oximeter 660 940 D 880 criticare 940 nm LED PDF

    ir led 940 nm 1 w

    Abstract: 660 880 940 led IR LED 940 nm spo2 spo2 specifications spo2 features 895nm emitter 660 880 940 dual-emitter DUAL-EMITTER MATCHING-PHOTODET
    Text: DUAL EMITTER / MATCHING PHOTODETECTOR SERIES MOLDED LEAD FRAME AND LEADLESS CERAMIC SUBSTRATE APPLICATIONS FEATURES • SPO2 • Blood Analysis • Medical Instrumentaion • Ratiometric Instruments The Dual LED series consist of a 660 nm red LED and a companion IR


    Original     		PDF

    2SD106AI-17

    Abstract: 2SD315AI 2SD106AI 2SD106A FZ1200R33KF1 1SD418 IGD-1-DT515 1SD418FI-FZ800R33KF2 FZ800R33KF2 igd 515
    Text: Treiber für IGBT und Power Mosfet Drivers for IGBTs and Power Mosfets No. of Gate Channels Voltage Type IGBT max. VCE VISO Ipeak 2SD106AI 2 +/- 15 V 1200 V 2500 V 6A 2SD106AI-17 2 +/- 15 V 1700 V 4000 V 6A 6SD106EI 6 +/- 15 V 1200 V 2500 V 6A 6SD106EI-17


    Original     		2SD106AI 2SD106AI-17 6SD106EI 6SD106EI-17 2SD315AI 2SD315AI-25 2SD315AI-33 1SD418FI-FZ2400R17KF6-B2 1SD418FI-FZ800R33KF1 1SD418FI-FZ800R33KF2 2SD106AI-17 2SD315AI 2SD106AI 2SD106A FZ1200R33KF1 1SD418 IGD-1-DT515 1SD418FI-FZ800R33KF2 FZ800R33KF2 igd 515 PDF

    4n35 optocoupler spice model

    Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		TS-16949 ISO-14001, 4n35 optocoupler spice model L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011 PDF

    missile guidance

    Abstract: ULTRA VIOLET LED infrared medical photo sensor VSF665C2 photo sensor 700 photo sensor devices MTRS1070 "infrared led" 980 nm infrared emitter download
    Text: STANDARD PHOTO SENSORS Visible Emitters Part # Power Output Peak Wavelength Material Beam Angle VSC572M3A 140 W 570 InGaAlP ±80º MT7064-UR 5.5mW 660nm GaAlAs ±20º MT8060N2 5.5mW 680nm GaAlAs ±35º MT511-UR 5.0mW 660nm GaAlAs ±55º MT3200A-UR 5.0mW 660nm


    Original     		VSC572M3A MT7064-UR 660nm MT8060N2 680nm MT511-UR MT3200A-UR MT108J-UR missile guidance ULTRA VIOLET LED infrared medical photo sensor VSF665C2 photo sensor 700 photo sensor devices MTRS1070 "infrared led" 980 nm infrared emitter download PDF

    Photosensors

    Abstract: No abstract text available
    Text: Frequently Asked Questions What is the greatest distance at which an infrared solution will still work? Can IR photosensors detect visible light? What is the most efficient emitter? Yes. All of the Fairchild photosensors are of on-axis intensity, is the QED123.


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    Photosensors

    Abstract: Photosensor Infrared photosensor QED123 QED223 QED234
    Text: Frequently Asked Questions What is the greatest distance at which an infrared solution will still work? Can IR photosensors detect visible light? What is the most efficient emitter? Yes. All of the Fairchild photosensors are of on-axis intensity, is the QED123.


    Original     		QED123. QED223 QED234 Photosensors Photosensor Infrared photosensor QED123 PDF

    opto A7800 A

    Abstract: opto A7800 GE-81 a7800 ALT1873 A7M1 photodiod modules a7800 a ALT042 ALY1167-XXX
    Text: SMDONTAPEANDREEL 2.8mm X 3.6mm Super Bright/Ultra Bright IF = 20 mA CHIP LINE NUMBER PART NUMBER EMITTING LENS λρ nm COLOR COLOR TYP. TYP. MAX. MIN. TYP. (DEG.) GaAlAs / GaAs SB RED W.C. (R.C.) 660 1.7 2.2 85 140 120 GaAlAs / GaAlAs UR RED W.C. (R.C.)


    Original     		ALT5K73 -AA-T01 -AA-UR-T01 ALT5K33 -AA-SB-T01 opto A7800 A opto A7800 GE-81 a7800 ALT1873 A7M1 photodiod modules a7800 a ALT042 ALY1167-XXX PDF

    B21G

    Abstract: SMD-W01N SMD-R06F Y500 SMD-B01N A5F1 y410 SMD-A001 y502 y911
    Text: L3 T1 LED’s unbased No. 30, 31 T1 Leuchtdioden ungesockelt T1 Diodes lumineuses sans socle All specifications according to information from our manufacturers, without additional quarantee on our part. Further types on request. Alle Spezifikationen basieren auf Angaben unserer Lieferanten,


    Original     		SMD63 B21G SMD-W01N SMD-R06F Y500 SMD-B01N A5F1 y410 SMD-A001 y502 y911 PDF

    L14F1 phototransistor datasheet

    Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
    Text: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions


    Original     		SE-171 L14F1 phototransistor datasheet l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3 PDF

    TRANSISTOR SMD MARKING CODE 3401

    Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
    Text: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111


    Original     		GEMY6050 TRANSISTOR SMD MARKING CODE 3401 Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62 PDF

    BI 370

    Abstract: BI 340 bi 240
    Text: F#9#B?J;  F98IJ7D:E<<I<EH8?%JH?#B;7:9ECFED;DJI IF;9?<?97J?EDI C7J;H?7B Standoff - Thermoplastic U.L. 94 V0. Color, Black :;I?=D Channels provide lead separation and lateral stability for components. Molded tabs retain component leads within the standoff for preassembly.


    Original     		PDF

    79212

    Abstract: en 50022-35 SF4 relay R0337 ah56 SF4-AH40 SF4-AH20 SF4-AH 74 hc 589 SF4-AH96
    Text: SF4-AH DIMENSIONS Unit: mm in SF4-AH□ Sensor Assembly dimensions Mounting drawing for the sensor on which the sensor mounting brackets and the intermediate supporting brackets are mounted. <Back mounting> <Side mounting> 30 1.181 28 1.102 26 1.024 16.9 0.665


    Original     		CE-SF4AH-10 79212 en 50022-35 SF4 relay R0337 ah56 SF4-AH40 SF4-AH20 SF4-AH 74 hc 589 SF4-AH96 PDF

    SMD transistor UY

    Abstract: smd optocoupler cop 200 transistor irf 630 transistor smd CR gy 615 smd 152,GY CR50TEA dual led 660 940 red infrared smd transistor GY smd rgb
    Text: LIGHT EMITTING CHARACTERISTICS ELCOS GmbH, well known as the first manufacturer of SMD components in Optoelectronics, has now completed it’s portfolio from the smallest single colour-package the CERLED onto the “semicustom” multichip package (the EUROLED). Regarding Standard Products the policy of ceramic substrates and moulded encapsulation gave the


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    transistor 6c x

    Abstract: E5 ic phototransistor 580 IR928-6C 340928
    Text: EVERLIGHT ELECTRONICS CO., LTD. MODEL NO: Device Number: DIR-092-107 IR928-6C ECN: REV: Page: Package Dimensions: Office: NO 25,Lane.76, Chung Yang Rd., Sec.3, Tucheng, Taipei 236, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines FAX: 886-2-2267-6189


    Original     		DIR-092-107 IR928-6C 22Lines) inclu22c 1000Pcs/1bag6bags/1box transistor 6c x E5 ic phototransistor 580 IR928-6C 340928 PDF

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 office@roithner-laser.com, www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


    Original     		RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI PDF

    transistor c 5936 circuit diagram

    Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a


    Original     		AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E transistor c 5936 circuit diagram c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB PDF

    transistor BD 139

    Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a


    Original     		AT-32063 AT32063 AT-320XX OT-363 SC-70) AT-32063, transistor BD 139 AP 1100 R1 darlington cascode second stage transistor AT-320 agilent PDF

    darlington cascode second stage

    Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors


    Original     		AT-32063 AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E darlington cascode second stage transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR d2030 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE D I V I S I O N LIGHT EMITTING DIODE LED Light Emitting Diode Light emitting diodes LEDs are opto-semiconductors that convert electric energy into light energy. Compared to semiconductor lasers (laser diodes or LD), LEDs offer advantages such


    Original     		DK-8381 KLED0002E01 PDF

    IFR-GDC40PW

    Abstract: No abstract text available
    Text: CONTENTS • LED INDICATOR LAMPS 5 • MINI TYPE LED LAMPS 11 • SPECIAL TYPE LED LAMPS 11 • TWO-COLOR LED LAMPS 13 • BLINKING LED LAMPS 13 •LIG H T BAR LED 13 . ULTRA-BRIGHT LED LAMPS 13 • LED NUMBERIC DISPLAY 15 . DOT MATRIX LED DISPLAY 19 • INFRARED EMITTING DIODE


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    DIN 46200

    Abstract: V61-14 D 3501 N 42 T d1dt NT398 GEZ DIODES v72-26-120m T2551N V72-26 T188F
    Text: Clamping Force kN an d D is c D ia m e te r (m m ) Phase control thyristors Typ kN Rectifier diodes Phase control thyristors mm Typ kN mm Typ kN Fast rectifier diodes mm T 178 N T 201 N 2 ,5 -5 7 -1 2 41 58 T 2001 N 3 6 -5 2 120 D 428 N 3 ,2 -7 ,6 41 T 2006 N


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    Untitled

    Abstract: No abstract text available
    Text: b h S B 'lB l Philips Semiconductors 002^230 b 3b M l APX Product specification UHF power transistor BLV193 'N AMER PHILIPS/DISCRETE FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.


    OCR Scan     		BLV193 MRAS57 PDF

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


    OCR Scan     		I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector PDF