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    EM500 Price and Stock

    SiTime Corporation SIT3808AI-CF-33EM-50.000000

    MEMS OSC VCXO 50.0000MHZ LVCMOS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3808AI-CF-33EM-50.000000 60 1
    • 1 $9.29
    • 10 $8.078
    • 100 $7.0218
    • 1000 $6.13864
    • 10000 $6.13864
    		Buy Now

    Flexxon Pte Ltd FSSL512GBE-M500

    INSPIRE M.2 2242 SATA SSD 512GB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FSSL512GBE-M500 Box 10 1
    • 1 $161.91
    • 10 $149.094
    • 100 $139.02486
    • 1000 $139.02486
    • 10000 $139.02486
    		Buy Now

    Flexxon Pte Ltd FSSE256GBE-M500

    INSPIRE MSATA SSD 256GB 3D TLC D
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FSSE256GBE-M500 Box 5 1
    • 1 $182.59
    • 10 $168.101
    • 100 $182.59
    • 1000 $182.59
    • 10000 $182.59
    		Buy Now

    Flexxon Pte Ltd FSSE001TBE-M500

    INSPIRE MSATA SSD 1TB 3D TLC DIA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FSSE001TBE-M500 Box 5 1
    • 1 $524.89
    • 10 $482.318
    • 100 $482.318
    • 1000 $482.318
    • 10000 $482.318
    		Buy Now

    Flexxon Pte Ltd FSSE032GBE-M500

    INSPIRE MSATA SSD 32GB 3D TLC DI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FSSE032GBE-M500 Box 5 1
    • 1 $182.59
    • 10 $168.101
    • 100 $182.59
    • 1000 $182.59
    • 10000 $182.59
    		Buy Now
    Find more EM500 price and stock on Findchips.com

    EM500 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EM500 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    EM500X EPCOS 2-Electrode Arresters Original PDF
    EM500XG EPCOS 2-Electrode Arresters Original PDF

    EM500 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B88069X2780S102

    Abstract: EM500X EM500 em epcos B88069X278 B88069X2780
    Text: Surge Arrester 2-Electrode-Arrester EM500X Ordering code: B88069X2780S102 DC spark-over voltage 1 2) 500 ± 20 V % < 950 < 800 V V < 1050 < 900 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 2.5 5 kA


    Original     		EM500X B88069X2780S102 57845/VDE0845 B88069X2780S102 EM500X EM500 em epcos B88069X278 B88069X2780 PDF

    EM500XG

    Abstract: No abstract text available
    Text: Surge Arrester 2-Electrode-Arrester EM500XG Ordering code: B88069X2810T502 Preliminary data DC spark-over voltage 1 2) 500 ± 20 V % < 950 < 800 V V < 1050 < 900 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs)


    Original     		EM500XG B88069X2810T502 57845/VDE0845 PDF

    Untitled

    Abstract: No abstract text available
    Text: Surge Arrester 2-Electrode-Arrester EM500X Ordering code: T. B. D. Preliminary data DC spark-over voltage 1 2) 500 ± 30 V % < 950 < 800 V V < 1050 < 900 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs)


    Original     		EM500X 57845/VDE0845 PDF

    EM500

    Abstract: B88069X2810T502 EM500XG
    Text: Surge Arrester 2-Electrode-Arrester EM500XG Ordering code: B88069X2810T502 DC spark-over voltage 1 2) 500 ± 20 V % < 950 < 800 V V < 1050 < 900 V V Nominal impulse discharge current wave 8/20 µs) Single impulse discharge current (wave 8/20 µs) 2.5 5 kA


    Original     		EM500XG B88069X2810T502 57845/VDE0845 EM500 B88069X2810T502 EM500XG PDF

    MA3232

    Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 BF123 CA3036 FT4017 2n1613 replacement A431 BF121 DIODE SJ 98 DM01B PDF

    transistor a640

    Abstract: transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor a640 transistor A608 2SC632 transistor 2sC632 2SC634 L14B Pt-100W CA3036 DM02B FV918 PDF

    12FL

    Abstract: No abstract text available
    Text: SUNON SPECIFICATION FOR APPROVAL CUSTOMER : DESCRIPTION : DC BRUSHLESS FAN DIMENSIONS : 50X50X15 mm MODEL : GM1205PHV2-A APPROVED NO : APPROVED BY : AUTHORIZED DAWN. Yuchen 2/11 CHKD. APPD. SPEC.NO M500065 ISSUE DATE 02.11.2000 EDITION REVISE DATE E.SPEC


    Original     		50X50X15 GM1205PHV2-A M500065 EM50037 12FL PDF

    Transistor mps 2112

    Abstract: MPS 2112 UZU2122 nais uzu2202 UZU2202 nais sensor UZU20205 druck EN50032-2 UZU2001
    Text: Drucksensoren mit hoher Funktionalität und digitaler LED Anzeige I I K JC m W v l 143k IW EINE NEUE GENERATION MULTIFUNKTIONALER HOCHPRÄZISER MIKROPROZESSORGESTEUERTER DIGITALMANOMETER Hohe Wiederholgenauig keit und Auflösung bei kurzen Ansprechzeiten Kurze Ansprechzeit; unter 2,5ms


    OCR Scan     		UZU811 Transistor mps 2112 MPS 2112 UZU2122 nais uzu2202 UZU2202 nais sensor UZU20205 druck EN50032-2 UZU2001 PDF

    transistor k1502

    Abstract: dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V transistor k1502 dr 25 germanium diode DIODE 10N 40D 2N3379 CA3036 K1502 K1501 2N5513 darlington 12V 6.2A P1029 PDF

    Black Star

    Abstract: EN50081-1 Nova200
    Text: The Nova series of counter-timers SPECIFICATION Nova 200 Frequency range Timebase Time between measurements Crystal frequency Setability Temperature stability Aging Nova 200X 10Hz - 200MHz 2 ranges Nova 2400 10Hz - 2.4GHz (3 ranges) 200m sec. 10MHz < 0.2ppm


    OCR Scan     		2400X 200MHz 10MHz 10ppm 20MHz 20Hz-20MHz; 10Hz-20Hz 100Hz 212mm Black Star EN50081-1 Nova200 PDF

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    U501D

    Abstract: 74HC4066 EL17-21SYGC U501B EM501 U501C U500A EM500 C5021 V3P3
    Text: 1 2 3 4 5 6 8 7 14 V3P3 U500E RID/NTC BIAS VCC 74HC4066 L500 2 1 V3P3 BLM21AG102SN1D GND 1 C501 2 GND 100N_16V_X7R V_BAT_- V_BAT_V3P3 D502 10MQ060 2 1 4 U500A 74HC4066 1 RID/NTC 2 J500 1 3 BATTERY + 2 5 BATTERY - RID_NTC_A 4 SDA_1_WIRE_A 3 SCL_A 2 BATTERY_A_EN


    Original     		U500E 74HC4066 BLM21AG102SN1D 10MQ060 U500A U500D U501E U501D 74HC4066 EL17-21SYGC U501B EM501 U501C U500A EM500 C5021 V3P3 PDF

    DIODE SJ 98

    Abstract: CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 DIODE SJ 98 CA3036 silicon epitaxial mesa diode microwave switch V405T DARLINGTON 3A 100V npn array 2n1613 replacement A431 MT726 MT869 MT995 PDF

    transistor A431

    Abstract: MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a
    Text: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . TYPE No. t Switching type, also listed in Section 12


    OCR Scan     		BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 transistor A431 MA3232 UD1001 A431 transistor FT4017 MT42a 20C26 DM01B SAC42 L29a PDF

    A1381 transistor

    Abstract: 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GE RMANIUM P N P 1 9 G ER M AN IU M N P N 1 10. SILICON PN P 1 1 . SILICON NPN LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V A1381 transistor 2N5036 CA3036 NF Amp NPN Silicon transistor TO-3 MA3232 20C26 2N5034 package 2N5035 L29a 2N5034 PDF

    Sunon gm1205phvx-a

    Abstract: GM1205PHVX-A 12FL EM500
    Text: SUNON SPECIFICATION FOR APPROVAL CUSTOMER : DESCRIPTION : DC BRUSHLESS FAN DIMENSIONS : 50X50X15 mm MODEL : GM1205PHVX-A APPROVED NO : APPROVED BY : AUTHORIZED DAWN. Yuchen 2/11 CHKD. APPD. SPEC.NO M500068 ISSUE DATE 02.11.2000 EDITION REVISE DATE E.SPEC


    Original     		50X50X15 GM1205PHVX-A M500068 EM50035 Sunon gm1205phvx-a GM1205PHVX-A 12FL EM500 PDF

    C 547 C

    Abstract: sener2 BSS8 Q 536 C557C RY 228 U504 29 C 548 c EM503 samsung s6
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 10. Part list 1 Internal System SE C C ode N ame B1 L oc ation 330 1-001 162 bead_c ore, BE A D -SM D ;6 8 ohm,3 .2 x1 .6 x0 .9 mm,3 0 0 0 mA ,T P ,0 .0 1 2 ohm, power


    Original     		PDF

    NS1000 n

    Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V MHM2101 NS1000 n CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78 PDF

    UD1001

    Abstract: FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		NPN110. BVCB0-80V BVCE0-60V BVEBO-15V BVCBO-100V BVCEO-80V BVEB0-15V BVCB0-60V BVCE0-40V UD1001 FT4017 transistor A431 MA3232 CA3036 UC850 DM01B DM02B UC340 L0NA PDF

    2sa525

    Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF

    EM500L00202AB

    Abstract: EM500L00102AA PTC conversion table EM500 Intel Order
    Text: Product Change Notification PCN #: 956, Revision 1 Please respond to your distributor if you have any issues with the timeline or content of this change. No response from customers will be deemed as acceptance of the change and the change will be implemented pursuant to the key milestones set forth in this attached PCN.


    Original     		0681h MU16810E LPM22CU500A 0683h MU168307 LPM22CUB500A EM500L00102AA EM500L00202AB EM500L00202AB EM500L00102AA PTC conversion table EM500 Intel Order PDF

    82443BX Northbridge

    Abstract: pin diagram for core i3 processor pin diagram i3 processor block diagram of pentium PROCESSOR EM500 PENTIUM PROCESSOR MOBILE MODULE 82371AB 82371EB 82443BX PIIX4E
    Text: Pentium III Processor – Low-Power Module Datasheet Product Features • ■ ■ ■ ■ ■ ■ ■ ■ Mobile Pentium® III processor at 500 MHz On-die, primary 16-Kbyte Instruction cache and 16-Kbyte Write Back Data cache On-die, 256-Kbyte L2 cache — Eight-way set associative


    Original     		16-Kbyte 256-Kbyte 82443BX Northbridge pin diagram for core i3 processor pin diagram i3 processor block diagram of pentium PROCESSOR EM500 PENTIUM PROCESSOR MOBILE MODULE 82371AB 82371EB 82443BX PIIX4E PDF

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 PDF

    molectron

    Abstract: Molectron Detector joulemeter 36643 QD41 molectron power max EM500 molectron p5-01
    Text: NE ! W JOULE MAX11 High Damage Threshold Pyroelectric Joulemeter Probe Features n n n n n n n n n n Damage Threshold: 300 mJ/cm2 at 1.06 µm 11 mm Diameter Sensor Area Broad Spectral Response: 0.1 to 1.1 µm Sensitive Range: 0.1 mJ to 300 mJ Rep Rate: 1 to 50 pps


    Original     		MAX11 EM400, EM500, EPM1000, EPM2000, JD501. JMAX11 molectron Molectron Detector joulemeter 36643 QD41 molectron power max EM500 molectron p5-01 PDF