ELM5E402PA Search Results
ELM5E402PA Datasheets Context Search
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Contextual Info: Single N-channel MOSFET ELM5E402PA-S •General description ■Features ELM5E402PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage |
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ELM5E402PA-S ELM5E402PA-S AFN1012E | |
ELM5E402PAContextual Info: 单 N 沟道 MOSFET ELM5E402PA-S •概要 ■特点 ELM5E402PA-S 是 N 沟道低输入电容，低工作电 •Vds=20V 压，低导通电阻的大电流 MOSFET。 · Id=0.7A ·Rds on = 360mΩ (Vgs=4.5V) ·Rds(on) = 420mΩ (Vgs=2.5V) ·Rds(on) = 560mΩ (Vgs=1.8V) |
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ELM5E402PA-S AFN1012E ELM5E402PA | |
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Contextual Info: シングル N チャンネル MOSFET ELM5E402PA-S •概要 ■特長 ELM5E402PA-S は低入力容量 低電圧駆動、 低 ・ Vds=20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=0.7A ・ Rds on = 360mΩ (Vgs=4.5V) ・ Rds(on) = 420mΩ (Vgs=2.5V) |
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ELM5E402PA-S AFN1012E | |
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Contextual Info: Single N-channel MOSFET ELM5E402PA-S •General description ■Features ELM5E402PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=20V Id=0.7A Rds(on) = 360mΩ (Vgs=4.5V) Rds(on) = 420mΩ (Vgs=2.5V) |
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ELM5E402PA-S ELM5E402PA-S AFN1012E |