Untitled
Abstract: No abstract text available
Text: Dual P-channel MOSFET ELM34801AA-N •General description ■Features ELM34801AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 50mΩ (Vgs=-10V) Rds(on) < 80mΩ (Vgs=-4.5V)
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ELM34801AA-N
ELM34801AA-N
P06B03LVG
May-04-2005
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ELM34801AA
Abstract: No abstract text available
Text: 双 P 沟道 MOSFET ELM34801AA-N •概要 ■特点 ELM34801AA-N 是 P 沟道低输入电容低工作电压、 •Vds=-30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=-6A ·Rds on < 50mΩ (Vgs=-10V) ·Rds(on) < 80mΩ (Vgs=-4.5V)
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ELM34801AA-N
P06B03LVG
May-04-2005
ELM34801AA
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Untitled
Abstract: No abstract text available
Text: デュアルパワー P チャンネル MOSFET ELM34801AA-N •概要 ■特長 ELM34801AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V オン抵抗という特性を備えた大電流デュアルパワー ・ Id=-6A MOSFET です。 ・ Rds on < 50mΩ (Vgs=-10V)
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Original
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ELM34801AA-N
P06B03LVG
May-04-2005
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PDF
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Untitled
Abstract: No abstract text available
Text: Dual P-channel MOSFET ELM34801AA-N •General description ■Features ELM34801AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-6A Rds(on) < 50mΩ (Vgs=-10V) Rds(on) < 80mΩ (Vgs=-4.5V)
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Original
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ELM34801AA-N
ELM34801AA-N
P06B03LVG
May-04-2005
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PDF
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ELM34801AA-N
Abstract: 24v 6A mosfet P-channel Trench MOSFET
Text: Dual P-channel MOSFET ELM34801AA-N • General description B F e a tu re s ELM 34801AA-N uses advanced tre n c h tech n o lo g y to provide excellent Rds on , low gate charge and low gate resistance. • Vds=-30V • Id=-6A • Rds(on) < 50mQ (Vgs=-10V) • Rds(on) < 80mQ (Vgs=-4.5V)
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OCR Scan
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ELM34801AA-N
ELM34801AA-N
24v 6A mosfet
P-channel Trench MOSFET
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