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ELM32418LA Abstract: No abstract text available Text: 单 N 沟道 MOSFET ELM32418LA-S •概要 ■特点 ELM32418LA-S 是 N 沟道低输入电容，低工作电压， •Vds=40V 低导通电阻的大电流 MOSFET。 ·Id=20A ·Rds on < 15mΩ (Vgs=10V) ·Rds(on) < 27mΩ (Vgs=7V) ■绝对最大额定值项目	Original	PDF	ELM32418LA-S P1504BDG O-252 May-05-2006 ELM32418LA
p1504bdg Abstract: No abstract text available Text: Single N-channel MOSFET ELM32418LA-S •General description ■Features ELM32418LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=20A Rds(on) < 15mΩ (Vgs=10V) Rds(on) < 27mΩ (Vgs=7V)	Original	PDF	ELM32418LA-S ELM32418LA-S P1504BDG O-252 May-05-2006 p1504bdg
Untitled Abstract: No abstract text available Text: シングル N チャンネル MOSFET ELM32418LA-S •概要 ■特長 ELM32418LA-S は低入力容量低電圧駆動、低・ Vds=40V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=20A ・ Rds on < 15mΩ (Vgs=10V) ・ Rds(on) < 27mΩ (Vgs=7V)	Original	PDF	ELM32418LA-S P1504BDG O-252 May-05-2006
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM32418LA-S •General description ■Features ELM32418LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=20A Rds(on) < 15mΩ (Vgs=10V) Rds(on) < 27mΩ (Vgs=7V)	Original	PDF	ELM32418LA-S ELM32418LA-S P1504BDG O-252 May-05-2006