Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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F59L4G81A
250us
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PDF
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F59L4G81A
Abstract: F59L two-plane program nand "4bit correction"
Text: ESMT Preliminary F59L4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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Original
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F59L4G81A
4bit/512Byte
F59L4G81A
F59L
two-plane program nand
"4bit correction"
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PDF
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Esmt
Abstract: F59D2G81A
Text: ESMT Preliminary F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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Original
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F59D2G81A
4bit/512Byte
Esmt
F59D2G81A
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PDF
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NAND Flash
Abstract: No abstract text available
Text: ESMT F59D2G81A / F59D2G161A Flash 2 Gbit 256M x 8 / 128M x 16 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit
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Original
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F59D2G81A
F59D2G161A
16bit
NAND Flash
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT F59L512M81A Preliminary Flash 512Mbit (64M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z z Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte
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Original
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F59L512M81A
512Mbit
250us
it/512
100in
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PDF
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F59L2G81A
Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h
Text: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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Original
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F59L2G81A
4bit/512Byte
F59L2G81A
F59L2G81A,
F59L2G81
two-plane program nand
bsc 60h
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PDF
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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Original
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F59L2G81A
250us
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PDF
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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Original
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F59D4G81A
250us
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PDF
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NAND Flash
Abstract: F59L2G81A
Text: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte
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Original
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F59L2G81A
350us
NAND Flash
F59L2G81A
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PDF
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NAND Flash
Abstract: No abstract text available
Text: ESMT F59D4G81A / F59D4G161A Flash 4 Gbit 512M x 8 / 256M x 16 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit
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Original
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F59D4G81A
F59D4G161A
16bit
NAND Flash
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PDF
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Untitled
Abstract: No abstract text available
Text: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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Original
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F59D2G81A
250us
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit 256M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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Original
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F59D2G81A
250us
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT F50L1G41A 2Y Flash 3.3V 1 Gbit SPI-NAND Flash Memory PRODUCT LIST Parameters Values VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined. 3.3V
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Original
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F50L1G41A
104MHz
104MT/s
100us
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PDF
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two-plane program nand
Abstract: No abstract text available
Text: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes
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Original
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F59L4G81A
250us
4bit/512Byte
two-plane program nand
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PDF
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F59D4G81A
Abstract: No abstract text available
Text: ESMT Preliminary F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit
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Original
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F59D4G81A
4bit/512Byte
F59D4G81A
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase
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Original
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F59D4G81A
250us
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PDF
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F59D1G81A
Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand
Text: ESMT F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES z z z z z z z Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte
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Original
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F59D1G81A
1bit/528Byte
F59D1G81A
1G NAND flash
Elite Semiconductor Memory Technology nand
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte
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Original
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F59L1G81MA
300us
4bit/512Byte,
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT F50L512M41A Flash 3.3V 512 Mbit SPI-NAND Flash Memory PRODUCT LIST Parameters Values VCC VCCQ1 Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. VCCQ should be the same as VCC. 2. x2 PROGRAM operation is not defined.
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Original
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F50L512M41A
104MHz
104MT/s
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT F59D512M81A Preliminary Flash 512Mbit (64M x 8) 1.8V NAND Flash Memory FEATURES z z z z z z z z z Voltage Supply: 1.7V ~ 1.95V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte
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Original
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F59D512M81A
512Mbit
250us
it/512
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PDF
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Untitled
Abstract: No abstract text available
Text: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes
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Original
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F59L1G81A
200us
it/528
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PDF
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Untitled
Abstract: No abstract text available
Text: ESMT F59L512M81A Flash 512Mbit 64M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte
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Original
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F59L512M81A
512Mbit
250us
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PDF
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1G NAND flash
Abstract: F59L1G81A F59L
Text: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
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Original
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F59L1G81A
200us
1G NAND flash
F59L1G81A
F59L
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PDF
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F59L1G81A
Abstract: No abstract text available
Text: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes
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Original
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F59L1G81A
200us
F59L1G81A
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PDF
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