ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Search Results

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Result Highlights (5)

Part	Manufacturer	Description
SCL3400-D01-004	Murata Manufacturing Co Ltd	2-axis (XY) digital inclinometer
SCC433T-K03-PCB	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board
SCC433T-K03-10	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor
SCC433T-K03-004	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor
MRUS74SK-001	Murata Manufacturing Co Ltd	Magnetic Sensor

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59L4G81A 250us	PDF
F59L4G81A Abstract: F59L two-plane program nand "4bit correction" Contextual Info: ESMT Preliminary F59L4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59L4G81A 4bit/512Byte F59L4G81A F59L two-plane program nand "4bit correction"	PDF
Esmt Abstract: F59D2G81A Contextual Info: ESMT Preliminary F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59D2G81A 4bit/512Byte Esmt F59D2G81A	PDF
NAND Flash Contextual Info: ESMT F59D2G81A / F59D2G161A Flash 2 Gbit 256M x 8 / 128M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (128M + 4M) x 16bit	Original	F59D2G81A F59D2G161A 16bit NAND Flash	PDF
Contextual Info: ESMT F59L512M81A Preliminary Flash 512Mbit (64M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z z Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte	Original	F59L512M81A 512Mbit 250us it/512 100in	PDF
F59L2G81A Abstract: F59L2G81A, F59L2G81 two-plane program nand bsc 60h Contextual Info: ESMT Preliminary F59L2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59L2G81A 4bit/512Byte F59L2G81A F59L2G81A, F59L2G81 two-plane program nand bsc 60h	PDF
Contextual Info: ESM T Preliminary F59L2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59L2G81A 250us	PDF
Contextual Info: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit	Original	F59D4G81A 250us	PDF
NAND Flash Abstract: F59L2G81A Contextual Info: ESMT F59L2G81A Flash 2 Gbit 256M x 8 3.3V NAND Flash Memory FEATURES         Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte	Original	F59L2G81A 350us NAND Flash F59L2G81A	PDF
NAND Flash Contextual Info: ESMT F59D4G81A / F59D4G161A Flash 4 Gbit 512M x 8 / 256M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit	Original	F59D4G81A F59D4G161A 16bit NAND Flash	PDF
Contextual Info: ESM T Preliminary F59D2G81A Operation Temperature Condition -40 C~85 C Flash 2 Gbit (256M x 8) 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59D2G81A 250us	PDF
Contextual Info: ESMT F59D2G81A Operation Temperature Condition -40°C~85°C Flash 2 Gbit 256M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (256M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59D2G81A 250us	PDF
Contextual Info: ESMT F50L1G41A 2Y Flash 3.3V 1 Gbit SPI-NAND Flash Memory PRODUCT LIST Parameters Values VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined. 3.3V	Original	F50L1G41A 104MHz 104MT/s 100us	PDF
two-plane program nand Contextual Info: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes	Original	F59L4G81A 250us 4bit/512Byte two-plane program nand	PDF

F59D4G81A Contextual Info: ESMT Preliminary F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit	Original	F59D4G81A 4bit/512Byte F59D4G81A	PDF
Contextual Info: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase	Original	F59D4G81A 250us	PDF
F59D1G81A Abstract: 1G NAND flash Elite Semiconductor Memory Technology nand Contextual Info: ESMT F59D1G81A Flash 1 Gbit 128M x 8 1.8V NAND Flash Memory FEATURES z z z z z z z Voltage Supply: 1.8V (1.7 V ~ 1.95V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte	Original	F59D1G81A 1bit/528Byte F59D1G81A 1G NAND flash Elite Semiconductor Memory Technology nand	PDF
Contextual Info: ESMT F59L1G81MA 2Y Flash 1 Gbit (128M x 8) 3.3V NAND Flash Memory FEATURES z z z z z z z z Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte	Original	F59L1G81MA 300us 4bit/512Byte,	PDF
Contextual Info: ESMT F50L512M41A Flash 3.3V 512 Mbit SPI-NAND Flash Memory PRODUCT LIST Parameters Values VCC VCCQ1 Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. VCCQ should be the same as VCC. 2. x2 PROGRAM operation is not defined.	Original	F50L512M41A 104MHz 104MT/s	PDF
Contextual Info: ESMT F59D512M81A Preliminary Flash 512Mbit (64M x 8) 1.8V NAND Flash Memory FEATURES z z z z z z z z z Voltage Supply: 1.7V ~ 1.95V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte	Original	F59D512M81A 512Mbit 250us it/512	PDF
Contextual Info: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes	Original	F59L1G81A 200us it/528	PDF
Contextual Info: ESMT F59L512M81A Flash 512Mbit 64M x 8 3.3V NAND Flash Memory FEATURES          Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array: (64M + 2M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte	Original	F59L512M81A 512Mbit 250us	PDF
1G NAND flash Abstract: F59L1G81A F59L Contextual Info: ESMT F59L1G81A Operation Temperature Condition -40°C~85°C Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit	Original	F59L1G81A 200us 1G NAND flash F59L1G81A F59L	PDF
F59L1G81A Contextual Info: ESMT F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES z z z z z z z z z z z z z z Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes	Original	F59L1G81A 200us F59L1G81A	PDF

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Search Results

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Result Highlights (5)

ELITE SEMICONDUCTOR MEMORY TECHNOLOGY NAND Datasheets Context Search

F59L4G81A

Esmt

NAND Flash

F59L2G81A

NAND Flash

NAND Flash

two-plane program nand

F59D4G81A

F59D1G81A

1G NAND flash

F59L1G81A