ELECTROLYTIC CAPACITOR 25 VOLTS Search Results

philips type 3186 capacitor

Abstract: 3186 cap
Contextual Info: Aluminum Electrolytic Capacitors Performance Specifications 2. DC WORKING VOLTAGE The DC working voltage is the maximum permis­ sible operating voltage DC volts + peak ripple voltage for continuous operation at maximum rated temperature. 3. SURGE VOLTAGE

CB22/16S

Contextual Info: ñemeo ALUMINUM ELECTROLYTIC SURFACE MOUNT CAPACITORS Type CB +85°C FEATURES • Low cost, high reliability surface mount construction NMCOS006 • Life: 1000 hours at +85°C • Capacitance range: 0.1 iif to 220 ^f • Voltage range: 4 volts to 50 volts

Contextual Info: ñemeo ALUMINUM ELECTROLYTIC SURFACE MOUNT CAPACITORS Type CB 5°C FEATURES NMCOS009 • Low cost, high reliability surface mount construction • Life: 1000 hours at +85°C • Capacitance range: 0.1 nf to 220 ¿if • Voltage range: 4 volts to 50 volts •

Contextual Info: S G S - 1 H M S 0 N SD4600 IL iO T M I RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS PRELIMINARY DATA . • » . GOLD METALLIZATION 860-960 MHz 26 VOLTS EFFICIENCY 50% MIN. ■ P o u t = 60 W MIN. WITH 7.5 d B GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base

capacitor 47uF electrolytic

Abstract: 100uF electrolytic capacitor SD4600
Contextual Info: SD4600 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . PRELIMINARY DATA GOLD METALLIZATION 860-960 MHz 26 VOLTS EFFICIENCY 50% MIN. POUT = 60 W MIN. WITH 7.5 dB GAIN .438 x .450 2LFL M173 epoxy sealed ORDER CODE BRANDING SD4600 SD4600

100uf electrolytic capacitor

Abstract: VARIABLE capacitor Electrolytic Capacitor 100uF 25V 10K .5w potentiometer 100uf 25V Electrolytic Capacitor thomson capacitor SD4600 100uF 50 v electrolytic capacitor capacitor 47uF electrolytic 47uF ELECTROLYTIC CAPACITOR
Contextual Info: SD4600 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . PRELIMINARY DATA GOLD METALLIZATION 860-960 MHz 26 VOLTS EFFICIENCY 50% MIN. P OUT = 60 W MIN. WITH 7.5 dB GAIN .438 x .450 2LFL M173 epoxy sealed ORDER CODE BRANDING SD4600 SD4600

178 09T

Abstract: capacitor mallory 1000 watt Motorola power supply RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 100 watt transistor transistor MTBF CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ bd136 equivalent Mallory Capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.

rohm mtbf

Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

capacitor mallory

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ 1000 watt Motorola power supply RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ 100 watt transistor bd136 equivalent rohm mtbf
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF15030 Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.

l237

Contextual Info: f Z J SCS-THOMSON SD1658 *>7 #. GÄMIlUIOTMIKgi RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS • . . . . 860 - 900 MHz 24 VOLTS CLASS AB PUSH PULL INTERNAL INPUT MATCHED DESIGNED FOR HIGH POWER LINEAR OPERATION . HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION

power tr unit j122 5 pin

Abstract: power tr unit j122 capacitor mallory CAPACITOR chip murata mtbf MUR5120T3 J119 transistor bd135 equivalent mallory 170
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400-1600 MHz.

960-1215 MHz transistor 20W

Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Contextual Info: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.

electrolytic capacitor 47uF

Contextual Info: SD4600 RF POWER BIPOLAR TRANSISTORS CELLULAR BASE STATION APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ 860-960 MHz ■ 26 VOLTS ■ EFFICIENCY 50% MIN. ■ POUT = 60 W MIN. WITH 7.5 dB GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base

Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

Contextual Info: STANDARD TEST PROCEDURES Capacitance, Dissipation factor DF , ESR, and impedance (Z) shall be measured using the bridge method at a standard testing frequency of 120Hz, (±5Hz) 2.2 Volts DC maximum bias and < 1.0 VRMS @ 25°C, other frequencies may be specified for special

FET J134

Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

DIODE ku 1490

Abstract: capacitor mallory mallory 170
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information The R F Line MRF15090 N P N Silico n RF Pow er T ran sistor Designed for 26 volts microwave large-signal, common emitter, class A and class A B linear amplifier applications in industrial and commercial FM/AM

Transistor J182

Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

SD4600

Abstract: a5058
Contextual Info: SD4600 RF POWER BIPOLAR TRANSISTORS CELLULAR BASE STATION APPLICATIONS FEATURES SUMMARY • GOLD METALLIZATION Figure 1. Package ■ 860-960 MHz ■ 26 VOLTS ■ EFFICIENCY 50% MIN. ■ POUT = 60 W MIN. WITH 7.5 dB GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base

mallory 170

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15090 The RF Line NPN Silicon RF Power TVansistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

30pf variable capacitor

Abstract: VARIABLE capacitor arco 463 capacitor 10uF/63V MS4080 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor 180PF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4080 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:

variable capacitor

Abstract: 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4280 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:

30pf variable capacitor

Abstract: variable capacitor arco 463 capacitor 10uF/63V 5 - 30pf variable capacitor 2943666661 capacitor variable Unelco Arco 422 10uf 63v capacitor
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4040 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 5 WATTS 28 VOLTS 11 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION: