ESAC63-004
Abstract: A478
Text: ESAC63-004 2 oa : O utline Drawings >a - y h * - '< V 7 m — F SCHOTTKY BARRIER DIODE 03.6 *o ? 4.5 ’Ü I .32 5 08 : Features •1 & V F Low Vp JEDEC T0-220AB EIAJ SC-46 • T.'tvT's'fae-K^nti-asi' Super high speed switching. m m & m Connection Diagram
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ESAC63-004
O-220AB
SC-46
500ns,
A478
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Untitled
Abstract: No abstract text available
Text: ESAC63-004 2 oa : O utline D raw ings >a - y h * - ' < V 7 m — F SCHOTTKY BARRIER DIODE 03.6 *o ? 4.5 ’Ü I .32 5 08 : Features JEDEC T0-220AB Low Vp EIAJ SC-46 T.'tvT's'f a e - K ^ n t i - a s i ' Super high speed switching. m m &m •1 & V F • Connection Diagram
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ESAC63-004
T0-220AB
SC-46
500ns,
l95t/R
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10JL2C48A
Abstract: U10JL2C48A
Text: TOSHIBA 10 JL2 C48A#U 10 JL2 C48A T O S H IB A H IG H EFFICIENCY D IO D E S T A C K H E D SILIC O N E P IT A X IA L TYPE 10JL2C48A, U10JL2C48A S W IT C H IN G TYPE P O W E R SUPPLY A P P L IC A T IO N C O N V E R TE R & CHOPPER A P P L IC A T IO N • •
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10JL2C48A,
U10JL2C48A
10JL2C48A
12-10D1A
12-10D2A
10JL2C48A
U10JL2C48A
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100GXHH22
Abstract: No abstract text available
Text: TOSHIBA 100GXHH22 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time v RRM = 4500V ÏF AV = 100 a tj»j»—5*5jus
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100GXHH22
00GXHH22
100GXHH22
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1000GXHH23
Abstract: No abstract text available
Text: TOSHIBA 1000GXHH23 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH23 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. 2 -0 3 .5 ±0.2 • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling •V rrm = 4500V : I f A V - 1000a
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1000GXHH23
000GXHH23
01OOMAX.
1000GXHH23
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1000GXHH22 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling 2 - 03.5 ± 0.2 : V rrm = 4500V : ! f AV = 1000A
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1000GXHH22
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1000GXHH22
Abstract: No abstract text available
Text: TOSHIBA 1000GXHH22 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1000GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS 2 - 0 3 .5 ± O .2 • • • Repetitive Peak Reverse Voltage Average Forward Current Double Side Cooling •V rrm : I f A V
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1000GXHH22
000GXHH22
2000i-
1000GXHH22
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Untitled
Abstract: No abstract text available
Text: 100GXHH22 TOSHIBA TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100GXHH22 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage Average Forward Current Reverse Recovery Time VRRM = 4500V :F AV = 1°0 a M A X IM U M RATINGS CHARACTERISTIC
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100GXHH22
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 50FXFG13,50FXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 50FXFG13, 50FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage V rrm = 3300V Average Forward Current :F AV = 50A Reverse Recovery Time (Tj = 25°C) trr = 2.0/¿s
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50FXFG13
50FXFH13
50FXFG13,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 10J L2 C48A, U10J L2 C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10JL2C48A, U10JL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current
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10JL2C48A,
U10JL2C48A
10JL2C48A
12-10D1A
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ntj100
Abstract: ESAC39M 56cf
Text: ESAC39M C,N,D (5A) : Outline Drawings 10_5max. FAST RECOVERY DIODE 4.5IV jf Features JEDEC SC-67 EIAJ Insulated package by fully m olding. m w m & m Super high speed switching. Connection Diagram Low VF in turn on • f tftlX tt High reliability 9 -I ^ — o '7,
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ESAC39M
ntj100
56cf
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ESAC93-02
Abstract: SC-65 T151 T460 T810 T930 A276
Text: ESAC93-02 12A I f e S i i f c i t S K • W K ' + i i : O u t lin e D r a w in g s LOW LOSS SUPER HIGH »PEED RECTIFIER ■ 4 # « : Features • te V F JEDEC EIAJ Low VF SC-65 • X-f S uper high speed sw itch in g . Connection Diagram • 7 V - * - & « c j& A flm tt
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ESAC93-02
SC-65
e9TS30
I95t/R89)
SC-65
T151
T460
T810
T930
A276
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ESAB82M-004
Abstract: No abstract text available
Text: E S A B 8 2 M - 4 5 a è ± / J ' i * ^ ì - k ‘ Outline Drawings SCHOTTKY BARRIER DIODE 0.4-1 1-2.7 I t t A : Features JEDEC Insulated package by fully m olding. SC-67 EIAJ >1&VF Low V F * Connection Diagram XfcT-K Super high speed switching. High reliability by planer design.
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ESAB82M-004
SC-67
500ns
eaTS30Â
l95t/R89
Shl50
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BAV23S l31
Abstract: diode 1407
Text: DISCRETE SEMICONDUCTORS BAV23S General purpose double diode Product specification Supersedes data of 1998 Jan 08 Philips Semiconductors 1999 May 05 PHILIPS PHILIPS Philips Semiconductors Product specification General purpose double diode BAV23S FEATURES DESCRIPTION
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BAV23S
BAV23S
SCA64
5002/00/04/pp8
BAV23S l31
diode 1407
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f930
Abstract: A309
Text: ES AD92 M 03 2o a - * O u tlin e D r a w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER : F e a tu re s JED E C Insulated package by fully molding. EIAJ • te V F Low V k • M"j*'sV tt-Y lflb lb 1-&L' C o n n e c t io n D ia g r a m Super high speed switching.
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wa-7651
I95t/R89)
f930
A309
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FT 3528
Abstract: rx-930
Text: ERC62M-004 1OA S 'a 'y b f — ' O jT ÿ 'f : Outline D rawings K S C H O T T K Y BARRIER DIODE 10.5MAX' 4.5 MAX. .2.0 35.2-8:* fe.O_ <D 0Æ 0.4, 2.7 5.0$ : Features JEDEC Insulated package by fully m olding. EIAJ SC-67 • te V F Low V F m « M K Connection Diagram
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ERC62M-004
SC-67
I95t/R89)
Shl50
FT 3528
rx-930
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Untitled
Abstract: No abstract text available
Text: KP923C2 5A f t S lif c iB Ä S f c y - f s t — K : Outline Drawings 2.3± 0,2 0.5 LOW LOSS SUPER HIGH SPEED RECTIFIER 0.5±0.1 : Features JEDEC • te V F Low VF EIAJ Super high speed sw itchin g. mm&wt Connection Diagram • T V —t High reliability by planer design
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KP923C2
I95t/R89)
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a548
Abstract: ESC011M-15 T151 T460 T760 T930
Text: E S C 1 1 M - 1 5 5 A IW K ’+ jS I Outline Drawings 5 .5 * ° 3 FAST RECOVERY DIODE 5 .5 * ° 3 <t>3.2 3.5 • f t « : Features • KiftttTv, Dam per diode fo r high d e finition TV and 0.6 high resolution display. •9 —YO>&kit Dam per and m odulater diode are jointed
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ESC011M-15
19S24^
I95t/R89)
a548
T151
T460
T760
T930
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TECO
Abstract: ESAC93M-02 T151 T810 t15i
Text: ESAC93M-02H2A If l - •'!'/£: Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER : Features O-frll 1.3-5 JEDEC Insulated pa ckag e by fully m o l d in g . EIAJ • IR V k Lo w V|. m a tt Connection Diagram S u p e r hig h speed s w itc h in g , mnzja&m ma
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ESAC93M-02I12A)
l95t/R89
Shl50
TECO
ESAC93M-02
T151
T810
t15i
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ET-7200B
Abstract: No abstract text available
Text: Chip Attenuators type RCN02 Features 1) Compare with single type 2) Guarantee the attenuation (0.3db, 0.5db) 3) Mounting area 50% less 4) Big reduction for mounting cost (3 times Once) ISO9001- / ISO/TS 16949-approved Rating Item Rated power
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Original
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RCN02
ISO9001-
16949-approved
300kHz
R1120A
ET-7200B
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9arw
Abstract: 40T125 T151 T760 T930 YG801C09 YG801
Text: Y G 8 0 1 C 0 9 5A ’ Outline Drawings SCHOTTKY BARRIER DIODE 4 .7 m a x. I0.5max. 2.7 *- ,2 E 0.6 0.7 • W f t : Features 2.54 2.54 2.7 JEDEC Insulated package by fully molding. EIAJ SC-67 • teV F Low Vf Connection Diagram Super high speed switching.
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YG801C09I5A)
500ns,
t-125
I95t/R89)
Shl50
9arw
40T125
T151
T760
T930
YG801C09
YG801
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Untitled
Abstract: No abstract text available
Text: E R C80 M- 0 0 4 5A ì± ^ « * ^ ì-k ' > 3 ' y b j r —' V J T f * - i K : O u tlin e D ra w in g s 4-5 MAX. SCHOTTKY BARRIER DIODE 2.0 : Features JEDEC EIAJ Insulated pa c ka g e by fully m o ld in g . SC-67 • fcV r L ow Vp C o n n e c tio n D ia g ra m
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SC-67
l95t/R89
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k531
Abstract: ERC88M-009 A374
Text: ERC88M-009I5A > 3 : Outline Drawings 'yhf— ' O J T f ' f t - F SCH O TTKY B A R R IE R DIODE : Features JEDEC EIAJ Insulated package by fully molding. SC-67 • <&VF Low V F Connection Diagram Super high speed switching. • y i s - i —ttmC'kz&im m High reliability by planer design.
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SC-67
500ns,
k531
ERC88M-009
A374
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sc802
Abstract: No abstract text available
Text: I' SC802-06 i < ' 7 Ÿ 4 *-\r • W i» : Outline Drawings S C H O T T K Y B A R R IE R D IO D E * iS a Ü 135la* Z HW. => (as J~Ï35* 135’ m J 12" 5.1-OJ : Features JEDEC Surface mount device EIAJ • <ftVF Low V F : Marking Super high speed switching.
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SC802-06
135la*
sc802
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