EFA480B Search Results

EFA480B Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EFA480B		Excelics Semiconductor	8-12V low distortion GaAs power FET		Original	PDF
EFA480BV		Excelics Semiconductor	8-12V low distortion GaAs power FET		Original	PDF

EFA480B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
EFA480B Abstract: EFA480BV EPA480BV Text: EFA480B/EFA480BV Low Distortion GaAs Power FET FEATURES • • • • • • • 960 156 50 +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	PDF	EFA480B/EFA480BV EFA480B EFA480BV 12GHz EPA480BV EFA480BV) EFA480B
EFA480B Abstract: No abstract text available Text: Excelics EFA480B DATA SHEET Low Distortion GaAs Power FET • • • • • • 960 +34.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 8GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION AND PLATED HEAT SINK ADVANCED EPITAXIAL DOPING PROFILE	Original	PDF	EFA480B 12GHz EFA480B
EFA480B Abstract: EFA480BV EPA480BV gm 90 156 369 Text: Excelics EFA480B/EFA480BV PRELIMINARY DATA SHEET Low Distortion GaAs Power FET 960 • • • • • • • +34.0dBm TYPICAL OUTPUT POWER 6.0dB TYPICAL POWER GAIN FOR EFA480B AND 7.5dB FOR EFA480BV AT 12GHz 0.5X 4800 MICRON RECESSED “MUSHROOM” GATE	Original	PDF	EFA480B/EFA480BV EFA480B EFA480BV 12GHz EPA480BV EFA480B EFA480BV. gm 90 156 369
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original	PDF
Curtice Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE	Original	PDF	EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	PDF	EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C