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    EFA060 Search Results

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    EFA060 Price and Stock

    Siemens 49EFA060800XXA

    MOUNTING PLATE, 6 H X 8 W IN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 49EFA060800XXA Box 1
    • 1 $131.75
    • 10 $131.75
    • 100 $131.75
    • 1000 $131.75
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    Mouser Electronics 49EFA060800XXA
    • 1 $109.78
    • 10 $100.63
    • 100 $97.34
    • 1000 $97.34
    • 10000 $97.34
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    Siemens 49EFA060800XXA (ALTERNATE: US2:49EFA060800XXA)

    Mounting plate, 6 H x 8 W in ; US2:49EFA060800XXA | Siemens 49EFA060800XXA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 49EFA060800XXA (ALTERNATE: US2:49EFA060800XXA) Bulk 2 Weeks 1
    • 1 $113.15
    • 10 $113.15
    • 100 $113.15
    • 1000 $113.15
    • 10000 $113.15
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    Others EFA060B

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange EFA060B 63
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    EFA060 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EFA060B Excelics Semiconductor 8-12V low distortion GaAs power FET Original PDF
    EFA060B-100F Excelics Semiconductor Low Distortion GaAs Power FET Original PDF
    EFA060B-70 Excelics Semiconductor 6-10V low distortion GaAs power FET Original PDF
    EFA060BB-100F Excelics Semiconductor 8-12V low distortion GaAs power FET Original PDF
    EFA060BV Excelics Semiconductor 8-12V low distortion GaAs power FET Original PDF

    EFA060 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EFA060B-100F

    Abstract: No abstract text available
    Text: Excelics EFA060B-100F DATA SHEET Low Distortion GaAs Power FET  7<3  '  7<3  All Dimensions In mils ELECTRICAL CHARACTERISTICS Ta = 25 OC SYMBOLS P1dB G1dB PAE PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression Vds=8V, Ids=50% Idss Gain at 1dB Compression


    Original     		EFA060B-100F 12GHz --S12-Mag --S22-Mag EFA060B-100F PDF

    EFA060B

    Abstract: EFA060BV
    Text: EFA060B/ EFA060BV Low Distortion GaAs Power FET FEATURES • • • • • • • 350 50 +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EFA060B/ EFA060BV EFA060B EFA060BV 12GHz EFA060BV) EFA060B 12GHz PDF

    EFA060B

    Abstract: 867 905 352 EFA060BV
    Text: Excelics EFA060B/EFA060BV DATA SHEET Low Distortion GaAs Power FET 350 • • • • • • • 50 +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EFA060B/EFA060BV EFA060B EFA060BV 12GHz EFA060B EFA060BV. 867 905 352 PDF

    EFA060B-70

    Abstract: No abstract text available
    Text: Excelics EFA060B-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +24.0dBm TYPICAL OUTPUT POWER 7.5 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		EFA060B-70 70mil 12GHz 18GHz EFA060B-70 PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    EFA018A

    Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70
    Text: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20


    Original     		EPB018A5 EPB018A7 EPB018A9 EPB025A V/15mA EFA018A EFA025A EFA018A EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70 PDF

    Avago 9886

    Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
    Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8


    Original     		com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes PDF

    Curtice

    Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A
    Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE


    Original     		EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A PDF

    EPA018A

    Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C
    Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the


    Original     		EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C PDF