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    SiTime Corporation SIT3808AI-C2-33EE-8.000000

    MEMS OSC VCXO 8.0000MHZ LVCMOS
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    DigiKey SIT3808AI-C2-33EE-8.000000 1
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    Amphenol Corporation MSAS-08PMMT-EE8001

    Conn Circular M 8 POS Solder ST SMD 8 Terminal 1 Port T/R - Bulk (Alt: MSAS-08PMMT-EE0001)
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    Avnet Americas MSAS-08PMMT-EE8001 Bulk 100 4 Weeks 1
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    MSAS-08PMMT-EE8001 Bulk 9 Weeks, 3 Days 1
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    Amphenol Corporation MSAS-05PFFT-EE8001

    Sensor Connector, M Series, M12, Female, 5 Positions, PCB Socket, Straight Panel Mount - Bulk (Alt: MSAS-05PFFT-EE0001)
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    Avnet Americas MSAS-05PFFT-EE8001 Bulk 100 4 Weeks 1
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    MSAS-05PFFT-EE8001 Bulk 9 Weeks, 3 Days 1
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    Amphenol Corporation MSDS-04PFFT-EE8001

    Sensor Connector, M Series, M12, Female, 4 Positions, PCB Socket, Straight Panel Mount - Bulk (Alt: MSDS-04PFFT-EE0001)
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    Avnet Americas MSDS-04PFFT-EE8001 Bulk 100 4 Weeks 1
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    Microchip Technology Inc OX-1710-DEE-8001-10M0000000

    Oven Controlled Crystal Oscillator (OCXO) 10MHz 0.8ppm Sinewave 5-Pin Thru-Hole - Bulk (Alt: OX-1710-DEE-8001-1)
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    Microchip Technology Inc OX-1710-DEE-8001-10M0000000 28 Weeks
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    EE800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS DESCRIPTION REV. ECN NO. DATE N/A 01/14/06 01 FIRST RELEASE FOR RFQ#A2006-9215 02 UPDATE DRAWING PER CUSTOMER REVISED SPECIFICATION EE8005 03/30/06 03 UPDATE DRAWING PER NEW CUSTOMER DRAWING EE8610 09/22/06 PAGE 4 & 5 ARE FOR INTERNAL ONLY PART NUMBER


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    PDF A2006-9215 EE8005 EE8610 835-00758F 2002/95/EC 10KHZ,

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV2562M 120R C8800

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV256M l256mh113 L256ML123R

    L256MH113R

    Abstract: L256ML113R
    Text: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


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    PDF Am29LV256M L256MH113R L256ML113R

    s29gl032m10tair

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte BGA-80P-M02 s29gl032m10tair

    SA293

    Abstract: SA273 988000
    Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 16-word/32-byte 56-pi SA293 SA273 988000

    L256ML

    Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte L256ML SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110

    29gl064

    Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,


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    PDF S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128N, S29GL256N S29GL032M, 29gl064 TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M

    sa330

    Abstract: E3800 spansion top marking Am29LV256M Am29LV256MH S29GL256M
    Text: Am29LV256M Data Sheet For new designs, S29GL256M supercedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced


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    PDF Am29LV256M S29GL256M Am29LV256MH/L S29GLxxxM sa330 E3800 spansion top marking Am29LV256M Am29LV256MH

    S29GL128P

    Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For


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    PDF S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128P, S29GL256P S29GL032M, S29GL128P a8800 S29GL032 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


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    PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379

    29gl064

    Abstract: Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit 3.0 Volt-only Page Mode Flash Memory Featuring 0.23 µm MirrorBit Process Technology Data Sheet For new designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M,


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    PDF S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128N, S29GL256N S29GL032M, 29gl064 Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M

    E78000

    Abstract: SA275 SA388 sa489 transistor SA427 120R 9898H Am29LV2562MH120 sa414
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV2562M E78000 SA275 SA388 sa489 transistor SA427 120R 9898H Am29LV2562MH120 sa414

    8A0000

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte S29GLxxxMA0 8A0000

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


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    PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    SA508

    Abstract: Am29LV256M SA285 SA276 CD8000 E68000 988000
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


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    PDF Am29LV256M 16-Bit/32 16-word/32-byte SA508 SA285 SA276 CD8000 E68000 988000

    Spansion S29GL256N90

    Abstract: S29GL512N11 S29GL256N10 S29GL512NH GL512N TXI002 S29GL256N90
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Data Sheet Distinctive Characteristics Architectural Advantages


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    PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte TBD--64-Ball 27631A0 Spansion S29GL256N90 S29GL512N11 S29GL256N10 S29GL512NH GL512N TXI002 S29GL256N90

    CD8000

    Abstract: No abstract text available
    Text: Am29LV256M Data Sheet For new designs, S29GL256M supersedes Am29LV256MH/L and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. July 2003 The following document specifies Spansion memory products that are now offered by both Advanced


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    PDF Am29LV256M S29GL256M Am29LV256MH/L S29GLxxxM CD8000

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns---

    ba508

    Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
    Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- ba508 BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329

    A81DC

    Abstract: a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040
    Text: MOTOROLA Order at ANE408/0 SEMICONDUCTOR APPLICATION NOTE ANE408 Previously ANE008 Logarithmic/Linear Conversion Routines for DSP56000/1 Prepared by: Eric Cheval Motorola G eneva, Switzerland I. INTRODUCTION DSP chips are often connected to mono-circuits (cofidecs) in telecommunication applications. When programmed *Cs multichannel DTMF


    OCR Scan
    PDF ANE408/D DSP56000/1 ANE408 ANE008) DSP56000/1 300-3400hz A81DC a21dc a51dc SG 2368 FE8800 ED8000 E78000 FA6400 0110FFFF e7040