EDI8L24512V Search Results

5630x

Contextual Info: EDI8L24512V 512Kx24 SRAM Module Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static DSP Memory Solution • Motorola DSP 5630x • Analog Devices SHARCTM Random Access Memory Array • Fast Access Times: 12, 15, 17, and 20ns The EDI8L24512V is a high speed, 3.3V, 12 megabit

DSP5630X

Contextual Info: K EDI8L24512V X 512KX24 SRAMModule E lfC nO M C DE96N1 NC Preliminary 512KX24 CMOSHigh Speed Static RAM Features 512KX24 bit CMOS Static The EDI8L24512V is a high speed, 3.3V, 12 megabit DSP Memory Solution • Motorola DSP 5630x SRAM. The device is available with access times of 12,

MO-47AE

Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and

EDI8L32512V-AC

Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Contextual Info: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

EDI8L32512V-AC

Abstract: 8L32512V
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

EDI8L32512V

Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

ADSP2106XL

Contextual Info: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,

512KX24

Abstract: 128KX24
Contextual Info: ma DSP SOLUTIONS aSCTRONIC DÉSKSN& W C X24ASYNCHRONOUS FAMILY 128K AND 512Kx24 SV/3.3V EDI's x24 Asynchronous SRAM family is de­ signed in support of Analog Devices ADSP- * 2106x DSPs. The family includes densities of 128Kx24 and 5!2Kx24. The family of devices

ADSP-21060L

Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
Contextual Info: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

EDI8L32512V25AI

Contextual Info: EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

Contextual Info: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC Preliminary 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, • ADSP-21060L SHARC

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Contextual Info: ^EDI ED I8L32512V 512Kx32 SRAM Module ELECTRONIC DESIGNS. INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The ED I8L32512V is a high speed, 3.3V, 16 m egabit • ADSP-21060L SHARC SRAM. The device is available w ith access tim es of 12,

Contextual Info: EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory

5630x

Abstract: 512Kx2
Contextual Info: m E D I8 L 2 4 5 1 2 V x 512Kx24 SRAM Module ELECTRONIC DESIGNS. INC Preliminary 512Kx24 CMOS High Speed Static RAM Features 512Kx24 bit CMOS Static The ED I8L24512V is a high speed, 3.3V, 12 m egabit DSP Memory Solution • SRAM. The device is available w ith access tim es of 12,