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    A15A

    Abstract: A15B EDI8L21664V MO-151 9704 64k x 16 SRAM
    Text: EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access


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    PDF EDI8L21664V 2x64Kx16 TMS320C54x EDI8L21664VxxBC 64Kx16 DQ0-15) EDI8L21664V10BC A15A A15B EDI8L21664V MO-151 9704 64k x 16 SRAM

    A15B

    Abstract: A15A EDI8L21664V MO-151
    Text: EDI8L21664V TMS320C54x External SRAM Memory Solution FEATURES DESCRIPTION n DSP Memory Solution The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.


    Original
    PDF EDI8L21664V TMS320C54x EDI8L21664VxxBC 2x64Kx16 64Kx16 TMS320C54x EDI8L21664V10BC A15B A15A EDI8L21664V MO-151

    A15A

    Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
    Text: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x


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    PDF EDI8L21664V 2x64Kx16SRAM TMS320C54x MO-151 EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC A15A A15B EDI8L21664V MO-151 9704

    A15B

    Abstract: No abstract text available
    Text: ^EDI EDI8L21664V h El£CTRO*«C 0C9CN& NC.1 2xS4KxieSRAM TMS320C54XExternalSRAM MemorySolution F eatures The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi­ layer laminate substrate. The device is packaged in a 74


    OCR Scan
    PDF TMS320C54XExternalSRAM TMS320C54x MO-151 EDI8L21664V EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC EDI8L21664V A15B