ED 77A Search Results

tda120XX

Abstract: sdc 7500 pwm control PHILIPS UOC tv kit service code with data TDA12000H1 tda 8823 equivalent tda 8823 samsung colour tv kit circuit diagram schematic diagram TCON lcd samsung sony x35 lcd smd transistor marking HT1
Contextual Info: N U N U N U N U N U C C C C C O O O O O TR O TR O TR O TR LL LL LL LL ED ED ED ED C PY PY PY P O O O O C C C U U U N N O O O C C C Product data sheet N N N Rev. 3.6 — 26 April 2006 O TR N N N N N Versatile signal processor for low- and mid-range TV applications

l8577

Abstract: 74ALS577
Contextual Info: SN74ALS576B, SN74A LS 5 77A, SN74AS576 ^IkKAAl QC7KA CMRdACC7C O C TAL D -T Y P E ED G E-TR IG G ER ED FLIP -FLO PS W ITH 3-STATE O U TPU TS D2661, DECEMBER 1982 - REVISED JANUARY 1989 3-State Buffer-Type Inverting Outputs Drive Bus-Lines Directly SN54ALSS76A, SN84AS576 . . J PACKAGE

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! M G FC40V3742 3 .7 — 4 .2 G H z BAND 10W IN TE R N A L L Y M A TCH ED GaAs F E T ¡ DESCRIPTION The M G FC40V3742 is an internally impedance-matched GaAs power FET especially designed fo r use in 3.7 ~ 4.2 GHz band amplifiers. The herm etically sealed metal-ceramic

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AN-994

Abstract: IRF3704 IRF3704L IRF3704S ed 77A DIODE
Contextual Info: PD - 93888B IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET Power MOSFET VDSS RDS on max ID 20V 9.0mΩ 77A… High Frequency Buck Converters for

ed 77A DIODE

Abstract: AN-994 IRF3704 IRF3704L IRF3704S
Contextual Info: PD - 93888A IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET Power MOSFET VDSS RDS on max ID 20V 9.0mΩ 77A High Frequency Buck Converters for

AN-994

Abstract: IRF3704 IRF3704L IRF3704S ed 77A DIODE
Contextual Info: PD - 93888B IRF3704 IRF3704S IRF3704L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l HEXFET Power MOSFET VDSS RDS on max ID 20V 9.0mΩ 77A… High Frequency Buck Converters for

Contextual Info: ifil SYNERG Y s^ icSnSIict^r 5V/3.3V32-1250MbpsPROTOCOL iiiinrnriincMT piLOCK IN DEPENDENT C RECOVERING CHIP PREL SIM Y8IN 77A0R 1Y V DESCRIPTION FEATURES The SY87701V is a complete Clock Recovery and Data Retim ing integrated circuit for data rates from 32M bps

Contextual Info: Philips S em iconductors • b b S B IB l DQ EbS7T 77A M APX Prelim inary specification BAT81/82/83 Schottky barrier diodes N AH ER P H I L I P S / D I S C R E T E DESCRIPTION General purpose and switching Schottky barrier diodes in a SOD68 envelope, with an integrated

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7157B

Abstract: C108D
Contextual Info: 1 1111111111111 111111 1 1111111111111 1 1111111111111 1 1111111111111 1 1 D12345678926ABCDDDEFFFDE D DDDDDDDD D DDDDDDDD D D FD7 D8DEDEFEDD F!DFD"#$D  "F%D8&D'FD5 3 *+,-D5()&D.27B9D.E&D8D *+DFFFE

LTC4098-3.6

Abstract: D669 97a6 4336 SXA-01GW-P0.6
Contextual Info: 88 12345678 ABCD8AAE8F8ABCDBB88DD8 1CB8 A8 16 356 CB876 +,16 43EE36 3"DF6 5D%56 D4D4&6 32%6 6 8146 6 BB46 3?D3F6636-70 645D/)6

APT50M50JVR

Abstract: 50JVR
Contextual Info: A d va n ced W/Æ P o w e r Te c h n o l o g y • R A PT50M 50JVR soov 77a o.osoq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

C5763

Abstract: D7678 DD652
Contextual Info:  3 635 DD 6 1 23 4 5 6 71 2 3 4 55 7 8 9 A 7B 9 A C D 71 E F  C  79   C   C      72  C   CD 7D  C D 6 7CCD7CD9 8C7&# 12=B&49DAB67B&F835D783&86D7 3ADB7 D37D5 D3!D7"78FD71869#8D6$B85D%3AD&&8'

RXPE 40

Abstract: RXPE40 RK 511 013 RXPE42 RXPE 42 rk 511 irf 5110 Directional relay type RXPE 4 RXPE47 DG 3-12A ASEA RK 51-200 E
Contextual Info: Catalogue RK 51-10 E JK S E A e d itio n 2 Jan ua ry 1976 Directional relay type RXPE 4 .y. f I: I I: ! . •: > ./.ts L t ~~ f Í" D irectional relay RXPE 4 operates accurately, dow n to 0.1 5% o f the rated voltage is provided with nine d iffe re n t curre nt

44PIN

Abstract: MSC1187
Contextual Info: Sfl E T> • ti724E4D □ □ 1 4 S 4 CI 77A M O K I J O K I Semiconductor O K I - r . s z . - i s - SEMI CONDUCTOR M SC1187-XX_0 K 1 S 9 GROUP _ 33-BIT SEGM ENT DRIVER WITH DIMMING FUNCTION GENERAL DESCRIPTION The MSC1187-XX is a vacuum fluorescent

64kx4 DRAM

Abstract: MT42C4064 Dual Port V-RAM
Contextual Info: l^ ic n o iM M T42C 4064 VRAM 64K x4 DRAM WITH 256 X 4 SAM FEATURES • • • • • • • • Industry standard pinout, tim ing and functions H igh perform ance CM O S silicon gate process Single + 5 V ±10% pow er supply Inputs and outputs are fully T TL and CM O S

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Contextual Info: 1234567894ABCDEF69 1234567894ABCDEF69 12345267389ABC 2DEF  4C45E57457DC7  234C25DC4E4E ! "F#$ #%5 9$552&   17E '4C3F 6 3 A48*  7CD45+4DCCBC5 4B4F565  A7"+ 7,C24  "2734544 2B2C2-4

phl137

Abstract: HC535
Contextual Info: -TC74HC377AP/AF OCTAL D - T Y P E F L I P - F L O P T h e T C 7 4 H C 3 77A is a h ig h speed C M O S O C T A L D - T Y P E F L I P - F L O P fa b r ic a te d w ith silico n g a te C2M O S tech n o lo g y . It a ch iev e s th e h ig h speed o p eratio n s im ila r to

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